Phototransistors
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Description
Phototransistors are photodiode-amplifier combinations
integrated within a single silicon chip. These are combined to
overcome the major fault of photodiodes: unity gain. Many
applications demand a greater output signal from the photodetector
than can be generated by a photodiode alone. While the signal
from a photodiode can always be amplified through use of an
external op-amp or other circuitry, this approach is often not as
practical or as cost-effective as the use of phototransistors. The
phototransistor can be viewed as a photodiode whose output
photocurrent is fed into the base of a conventional small-signal
transistor. While not required for operation of the device as a
photodetector, a base connection is often provided, allowing the
designer the option of using base current to bias the transistor. The
typical gain of a phototransistor can range from 100 to over 1500.
Phototransistors can be used as ambient-light detectors. When
used with a controllable light source, typically an IRED, they
are often employed as the detector element for optoisolators and
transmissive or reflective optical switches.
All phototransistors are RoHS compliant.
Features
• Low-cost visible and near-IR
photodetection
• Available with gains from 100
to over 1500
• Moderately fast response times
• Available in a wide range of
packages including epoxy-coated,
transfer-molded, cast, hermetic
packages, chip form and surface
mounting technology
• Usable with almost any visible
or near-infrared light source such
as IREDs, neon, fluorescent,
incandescent bulbs, lasers, flame
sources, sunlight, etc.
• Same general electrical
characteristics as familiar signal
transistors
Typical Applications
• Computer/business equipment
• Write-protect control
• Margin controls—printers
• Industrial
• LED light source—light pens
• Security systems
• Safety shields
• Consumer
• Coin counters
• Lottery card readers
• Position sensors—joysticks
• Remote controllers—toys,
appliances, audio/visual
equipment
• Games—laser tag
• Camera shutter control
Principle of Operation
Phototransistors are solid-state light
detectors that possess internal gain.
They can be used to provide either
an analog or digital output signal.
Datasheets available upon request.
Absolute Maximum Ratings
Maximum Temperatures -25°C to 80°C (CR10TE, CR50TE)
Storage and Operating: -40°C to 100°C
-40°C to 110°C (VTT1015, VTT1016,
VTT1017, VTT1115, VTT1116, and VTT1117)
-40°C to 85°C (VTT7222, VTT7223,
VTT7225, VTT7122, VTT7123, and VTT7125)
-40°C to 70°C (VTT9002, VTT9003,
VTT9102, and VTT9103)
Continuous Power Dissipation: 50 mW
100 mW (VTT9002, VTT9003, VTT9102,
and VTT9103)
200 mW (CR10TE, CR50TE)
250 mW (VTT1015, VTT1016, VTT1017,
VTT1115, VTT1116, and VTT1117)
Derate above 30°C: 0.71 mW/˚C
2.5 mW/˚C (VTT9002, VTT9003, VTT9102,
and VTT9103)
3.12 mW/˚C (VTT1015, VTT1016, VTT1017,
VTT1115, VTT1116, and VTT1117)
0.91 mW/˚C (VTT7122, VTT7123, VTT7125)
Maximum Current: 25 mA
200 mA (VTT1015, VTT1016, VTT1017,
VTT1115, VTT1116, and VTT1117)
Lead-Soldering Temperature: 260°C (1.6 mm from case, 5 sec. max.)
phototransistors
NPN Phototransistors
0.25", small area, high speed
0.04", medium area, high sensitivity
0.05", large area, high sensitivity
20 www.optoelectronics.perkinelmer.com
Light Current Dark Current Angular
Part H fc (mW/cm2)nA VCEVBR(CEO) VBR(ECO) VCE(SAT) tR/tFResponse
Number mA min. VCE=5 V max. Volts Volts min. Volts min. Volts max. µsec, typ. θ1/2
VTT1222WH 1.9 100 (5) 10 20 50 6 0.25 2 ±40˚
VTT1223WH 1.5 100 (5) 10 20 40 6 0.25 3 ±40˚
VTT1225H 4100 (5) 100 10 30 5 0.25 1.5 ±5˚
VTT1226H 7.5 100 (5) 100 10 30 5 0.25 3 ±5˚
VTT1227H 12 100 (5) 100 10 30 5 0.25 4 ±5˚
VTT1322WH 0.8 100 (5) 10 20 50 6 0.25 2 ±40˚
VTT1323WH 1 100 (5) 10 20 40 6 0.25 3 ±40˚
VTT3122EH 1.2 100 (5) 100 20 40 6 0.25 2.5 ±8˚
VTT3123EH 4100 (5) 100 10 30 4 0.25 4 ±8˚
VTT3323LAH 2 20 (1) 100 10 30 5 0.25 3 ±10˚
VTT3324LAH 420 (1) 100 10 30 5 0.25 4 ±10˚
VTT3325LAH 620 (1) 100 10 30 5 0.25 5 ±10˚
VTT3423LAH 120 (1) 100 10 30 5 0.25 3 ±10˚
VTT3424LAH 220 (1) 100 10 30 5 0.25 4 ±10˚
VTT3425LAH 320 (1) 100 10 30 5 0.25 5 ±10˚
VTT7122H 1 100 (5) 100 10 30 5 0.25 2 ±36˚
VTT7123H 2 100 (5) 100 10 30 5 0.25 2 ±36˚
VTT7125H 4.5 100 (5) 100 10 30 5 0.25 2 ±36˚
VTT7222H 0.9 100 (5) 100 10 30 5 0.25 2 ±36˚
VTT7223H 1.8 100 (5) 100 10 30 5 0.25 2 ±36˚
VTT7225H 4 100 (5) 100 10 30 5 0.25 4 ±36˚
.025’’ x .025’’ NPN Phototransistors
Technical Specification
Table Key
ICLight Current
ICEO Dark Current H=0
VBR(CEO) Collector Breakdown IC=100 µA, H=0
VBR(ECO) Emitter Breakdown IE=100 µA, H=0
VCE(SAT) Saturation Voltage IC=1 mA, H=400 fc
tR/tFRise/Fall Time IC=1 mA, RL=100 Ω
Electro-Optical Characteristics @ 25°C
Light Current Dark Current Angular
Part H fc (mW/cm2)nA V
CE VBR(CEO) VBR(ECO) VCE(SAT) tR/tFResponse
Number mA min. VCE=5 V max. Volts Volts min. Volts min. Volts max. µsec, typ. θ1/2
VTT1212H 2 20 (1) 100 10 30 5 0.25 4 ±10˚
VTT1214H 420 (1) 100 10 30 5 0.25 6 ±10˚
VTT1312H 120 (1) 100 10 30 5 0.25 4 ±10˚
VTT1314H 2.4 20 (1) 100 10 30 5 0.25 6 ±10˚
VTT9002H 2100 (5) 100 10 30 6 0.55 4 ±50˚
VTT9003H 5100 (5) 100 10 30 6 0.55 6 ±50˚
VTT9102H 6 100 (5) 100 5 30 4 0.55 6 ±42˚
VTT9103H 13 100 (5) 100 5 30 4 0.55 10 ±42˚
.04’’ x .04’’ NPN Phototransistors
Technical Specification
Electro-Optical Characteristics @ 25°C
phototransistors
Clear T- 1 3/4 (5 mm) Plastic Package
VTT1212 VTT1223W VTT1227
VTT1214 VTT1225
VTT1222W VTT1226
IRT T-1 3/4 (5mm) Plastic Package
VTT1322W VTT1312
VTT1323W VTT1314
Coax Hermetic (with case lead)
VTT3122E VTT3123E
Clear Long T-1 (3 mm) Plastic Package
VTT3323LA VTT3324LA VTT3325LA
IRT Long T-1 (3 mm) Plastic Package
VTT3423LA VTT3424LA VTT3425LA
Molded, Lensed Lateral Package
VTT7122 VTT7123 VTT7125
IRT Molded, Lensed Lateral Package
VTT7222 VTT7223 VTT7225
Clear Epoxy TO-106 Ceramic Package
VTT9002 VTT9003
Epoxy Lensed TO-106 Ceramic Package
VTT9102 VTT9103
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Phototransistors
Light Current Dark Current Angular
Part H fc (mW/cm2)nA VCEVBR(CEO) VBR(ECO) VCE(SAT) tR/tFResponse
Number mA min. VCE=5 V max. Volts Volts min. Volts min. Volts max. µsec, typ. θ1/2
VTT1015H 0.4 100 (5) 25 20 40 6 0.4 5 ±35˚
VTT1016H 1100 (5) 25 20 30 6 0.4 5 ±35˚
VTT1017H 2.5 100 (5) 25 10 20 4 0.4 8 ±35˚
VTT1115H 120 (1) 100 10 30 6 0.4 5 ±15˚
VTT1116H 2 20 (1) 100 10 30 4 0.4 8 ±15˚
VTT1117H 420 (1) 100 10 30 4 0.4 8 ±15˚
.05’’ x .05’’ NPN Phototransistors
Technical Specification
TO-46 Flat Window Package
VTT1015 VTT1016 VTT1017
TO-46 Lensed Package
VTT1115 VTT1116 VTT1117
Table Key
ICLight Current
ICEO Dark Current H=0
VBR(CEO) Collector Breakdown IC=100 µA, H=0
VBR(ECO) Emitter Breakdown IE=100 µA, H=0
VCE(SAT) Saturation Voltage IC=1 mA, H=400 fc
tR/tFRise/Fall Time IC=1 mA, RL=100 ΩElectro-Optical Characteristics @ 25°C
CR10TE
• Surface mounting device
• Solid state ceramic chip
• High thermal conductivity
• Special type (CR10TE-DLF) with
daylight filter on request
Peak Sensitivity Dark Active Rise/Fall
Part Spectral Wavelength Vce P-Current Current Area Time
Number Package* Range (nm) (V) (nA) (mm2)Orientation
CR10TE Ceramic 400–1070 850 40 3 400 0.19 10/10 High Vce
SMD (A1)
CR50TE Ceramic 400–1070 850 40 3 400 0.19 10/10 High Vce
SMD (A2)
I
Technical Specification
* All packages are listed on our website.
