1
Subject to change without notice.
www.cree.com/rf
CGH60015D
15 W, 6.0 GHz, GaN HEMT Die
Cree’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity, and higher thermal
conductivity. GaN HEMTs offer greater power density and wider bandwidths compared
to Si and GaAs transistors.
FEATURES
• 15 dB Typical Small Signal Gain at 4 GHz
• 12 dB Typical Small Signal Gain at 6 GHz
• 15 W Typical PSAT
• 28 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 6 GHz Operation
• HighEfciency
APPLICATIONS
• 2-Way Private Radio
• BroadbandAmpliers
• Cellular Infrastructure
• Test Instrumentation
• ClassA,AB,Linearamplierssuitablefor
OFDM, W-CDMA, EDGE, CDMA waveforms
Packaging Information
• Bare die are shipped in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during shipment.
Rev 4.0 – May 2017
PN: CGH60015D
2CGH60015D Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter Symbol Rating Units Conditions
Drain-source Voltage VDSS 84 VDC 25˚C
Gate-source Voltage VGS -10, +2 VDC 25˚C
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 4.0 mA 25˚C
Maximum Drain Current1IDMAX 1.5 A 25˚C
Thermal Resistance, Junction to Case (packaged)2RθJC 8.0 ˚C/W
Thermal Resistance, Junction to Case (die only) RθJC 5.1 ˚C/W 85˚C
Mounting Temperature (30 seconds) TS320 ˚C 30 seconds
Note1 Current limit for long term, reliable operation
Note2 Eutecticdieattachusing80/20AuSnmountedtoa40milthickCuMoCucarrier.
Electrical Characteristics (Frequency = 4 GHz unless otherwise stated; TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics
Gate Threshold Voltage VGS(TH) -3.8 -3.0 –2.3 V VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDD = 28 V, IDQ = 100 mA
Drain Current IDS 2.9 3.5 – A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBD 120 – – V VGS = -8 V, ID = 3.6 mA
On Resistance RON – 1.0 – ΩVDS = 0.1 V
Gate Forward Voltage VG-ON – 1.9 – V IGS = 3.6 mA
RF Characteristics
Small Signal Gain GSS – 15 – dB VDD = 28 V, IDQ = 100 mA
Saturated Power Output1PSAT – 15 – W VDD = 28 V, IDQ = 100 mA
DrainEfciency2η– 65 – % VDD = 28 V, IDQ = 100 mA, PSAT = 15 W
Intermodulation Distortion IM3 – -30 – dBc VDD = 28 V, IDQ = 100 mA,
POUT = 15 W PEP
Output Mismatch Stress VSWR – – 10 : 1 Y
No damage at all phase angles,
VDD = 28 V, IDQ = 100 mA,
POUT = 15 W CW
Dynamic Characteristics
Input Capacitance CGS – 4.1 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance CDS – 0.9 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance CGD – 0.2 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 PSATisdenedasIG = 0.4 mA.
2DrainEfciency=POUT /PDC
3CGH60015D Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
DIE Dimensions (units in microns)
Overalldiesize1060x920(+0/-50)microns,diethickness100(+/-10)microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Assembly Notes:
• RecommendedsolderisAuSn(80/20)solder.RefertoCree’swebsitefortheEutecticDieBondProcedureapplicationnoteat
http://www.cree.com/products/wireless_documents.asp
• Vacuum collet is the preferred method of pick-up.
• The backside of the die is the Source (ground) contact.
• Die back side gold plating is 5 microns thick minimum.
• Thermosonic ball or wedge bonding are the preferred connection methods.
• Gold wire must be used for connections.
• Use the die label (XX-YY) for correct orientation.
4CGH60015D Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH60015D
VDD = 28 V, IDQ = 200 mA
Intrinsic die parameters - reference planes at centers of gate and drain bonding pads. No wire bonds assumed.
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH60015D
VDD = 28 V, IDQ = 200 mA
MAG (dB)
K Factor
Minimum Noise Figure (dB)
Noise Resistance (Ohms)
5CGH60015D Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Typical Die S-Parameters (Small Signal, VDS = 28 V, IDQ = 100 mA, magnitude / angle)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0.934 -119.01 17.60 114.24 0.027 25.07 0.332 -87.18
600 MHz 0.929 -127.83 15.22 108.93 0.028 19.92 0.316 -94.45
700 MHz 0.925 -134.59 13.36 104.63 0.029 15.79 0.307 -100.05
800 MHz 0.923 -139.91 11.87 101.05 0.029 12.37 0.302 -104.41
900 MHz 0.921 -144.20 10.66 97.98 0.029 9.46 0.300 -107.86
1.0 GHz 0.920 -147.72 9.66 95.28 0.030 6.93 0.300 -110.62
1.1 GHz 0.919 -150.66 8.82 92.86 0.030 4.68 0.302 -112.85
1.2 GHz 0.918 -153.16 8.11 90.66 0.030 2.64 0.305 -114.69
1.3 GHz 0.918 -155.31 7.50 88.64 0.030 0.78 0.309 -116.23
1.4 GHz 0.918 -157.17 6.96 86.75 0.030 -0.94 0.315 -117.53
1.5 GHz 0.917 -158.81 6.50 84.98 0.030 -2.54 0.320 -118.66
1.6 GHz 0.917 -160.27 6.09 83.30 0.030 -4.05 0.327 -119.65
1.7 GHz 0.918 -161.56 5.72 81.70 0.030 -5.49 0.334 -120.54
1.8 GHz 0.918 -162.73 5.39 80.17 0.030 -6.85 0.341 -121.35
1.9 GHz 0.918 -163.79 5.10 78.70 0.030 -8.16 0.349 -122.09
2.0 GHz 0.918 -164.75 4.83 77.28 0.029 -9.42 0.357 -122.79
2.1 GHz 0.918 -165.64 4.59 75.90 0.029 -10.63 0.365 -123.45
2.2 GHz 0.919 -166.45 4.37 74.56 0.029 -11.80 0.373 -124.09
2.3 GHz 0.919 -167.20 4.16 73.26 0.029 -12.94 0.381 -124.71
2.4 GHz 0.919 -167.90 3.98 71.99 0.029 -14.04 0.390 -125.30
2.5 GHz 0.920 -168.56 3.80 70.74 0.029 -15.12 0.398 -125.89
2.6 GHz 0.920 -169.17 3.64 69.53 0.029 -16.17 0.407 -126.47
2.7 GHz 0.921 -169.75 3.49 68.34 0.029 -17.20 0.415 -127.05
2.8 GHz 0.921 -170.29 3.35 67.17 0.028 -18.20 0.424 -127.62
2.9 GHz 0.921 -170.80 3.22 66.02 0.028 -19.18 0.433 -128.18
3.0 GHz 0.922 -171.29 3.10 64.89 0.028 -20.14 0.441 -128.75
3.2 GHz 0.923 -172.20 2.88 62.69 0.028 -22.01 0.458 -129.87
3.4 GHz 0.924 -173.02 2.68 60.56 0.028 -23.81 0.475 -130.99
3.6 GHz 0.925 -173.79 2.51 58.49 0.027 -25.56 0.492 -132.10
3.8 GHz 0.926 -174.50 2.35 56.47 0.027 -27.24 0.508 -133.22
4.0 GHz 0.927 -175.16 2.21 54.51 0.027 -28.87 0.524 -134.33
4.2 GHz 0.928 -175.79 2.08 52.59 0.026 -30.45 0.539 -135.44
4.4 GHz 0.929 -176.39 1.96 50.72 0.026 -31.99 0.554 -136.54
4.6 GHz 0.930 -176.95 1.85 48.90 0.025 -33.48 0.568 -137.63
4.8 GHz 0.931 -177.50 1.75 47.12 0.025 -34.93 0.582 -138.71
5.0 GHz 0.933 -178.02 1.66 45.37 0.025 -36.34 0.596 -139.78
5.2 GHz 0.934 -178.52 1.57 43.67 0.024 -37.71 0.609 -140.85
5.4 GHz 0.935 -179.01 1.50 42.01 0.024 -39.04 0.622 -141.90
5.6 GHz 0.936 -179.48 1.42 40.38 0.023 -40.33 0.634 -142.93
5.8 GHz 0.937 -179.94 1.36 38.78 0.023 -41.59 0.646 -143.96
6.0 GHz 0.938 179.61 1.29 37.22 0.023 -42.82 0.657 -144.97
To download the s-parameters in s2p format, go to the CGH60015D Product Page and click on the documentation tab.
6CGH60015D Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Typical Die S-Parameters (Small Signal, VDS = 28 V, IDQ = 200 mA, magnitude / angle)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0.938 -125.92 18.76 111.46 0.022 22.32 0.300 -109.34
600 MHz 0.933 -134.06 16.11 106.58 0.023 17.60 0.296 -116.39
700 MHz 0.931 -140.21 14.07 102.67 0.024 13.87 0.295 -121.49
800 MHz 0.929 -145.02 12.46 99.42 0.024 10.79 0.295 -125.23
900 MHz 0.928 -148.86 11.16 96.65 0.024 8.19 0.297 -128.01
1.0 GHz 0.927 -152.01 10.10 94.21 0.024 5.93 0.299 -130.10
1.1 GHz 0.926 -154.64 9.21 92.03 0.024 3.92 0.303 -131.68
1.2 GHz 0.926 -156.86 8.46 90.05 0.024 2.11 0.307 -132.90
1.3 GHz 0.926 -158.77 7.82 88.22 0.024 0.45 0.312 -133.83
1.4 GHz 0.925 -160.43 7.26 86.52 0.024 -1.08 0.317 -134.56
1.5 GHz 0.925 -161.89 6.78 84.91 0.024 -2.51 0.322 -135.14
1.6 GHz 0.925 -163.19 6.35 83.39 0.024 -3.86 0.328 -135.60
1.7 GHz 0.925 -164.34 5.97 81.94 0.024 -5.14 0.334 -135.98
1.8 GHz 0.925 -165.38 5.63 80.54 0.024 -6.36 0.340 -136.29
1.9 GHz 0.926 -166.33 5.32 79.20 0.024 -7.53 0.347 -136.56
2.0 GHz 0.926 -167.19 5.05 77.90 0.024 -8.66 0.354 -136.80
2.1 GHz 0.926 -167.98 4.80 76.64 0.024 -9.75 0.361 -137.02
2.2 GHz 0.926 -168.71 4.57 75.42 0.024 -10.80 0.368 -137.22
2.3 GHz 0.926 -169.39 4.36 74.22 0.024 -11.82 0.375 -137.42
2.4 GHz 0.927 -170.02 4.16 73.05 0.024 -12.82 0.382 -137.61
2.5 GHz 0.927 -170.61 3.98 71.91 0.024 -13.79 0.389 -137.81
2.6 GHz 0.927 -171.16 3.82 70.79 0.024 -14.74 0.397 -138.01
2.7 GHz 0.927 -171.68 3.66 69.69 0.024 -15.67 0.404 -138.22
2.8 GHz 0.928 -172.17 3.52 68.60 0.023 -16.58 0.412 -138.43
2.9 GHz 0.928 -172.64 3.39 67.54 0.023 -17.47 0.419 -138.66
3.0 GHz 0.928 -173.08 3.26 66.49 0.023 -18.34 0.427 -138.89
3.2 GHz 0.929 -173.90 3.03 64.44 0.023 -20.05 0.442 -139.38
3.4 GHz 0.930 -174.66 2.83 62.45 0.023 -21.69 0.457 -139.91
3.6 GHz 0.931 -175.36 2.65 60.50 0.022 -23.29 0.471 -140.48
3.8 GHz 0.931 -176.01 2.49 58.61 0.022 -24.84 0.486 -141.08
4.0 GHz 0.932 -176.62 2.34 56.75 0.022 -26.35 0.500 -141.71
4.2 GHz 0.933 -177.20 2.21 54.94 0.022 -27.81 0.515 -142.37
4.4 GHz 0.934 -177.75 2.08 53.17 0.021 -29.24 0.528 -143.06
4.6 GHz 0.935 -178.27 1.97 51.43 0.021 -30.63 0.542 -143.76
4.8 GHz 0.936 -178.77 1.87 49.73 0.021 -31.98 0.555 -144.48
5.0 GHz 0.936 -179.26 1.77 48.06 0.021 -33.30 0.568 -145.22
5.2 GHz 0.937 -179.72 1.69 46.42 0.020 -34.59 0.581 -145.96
5.4 GHz 0.938 179.83 1.61 44.81 0.020 -35.85 0.593 -146.72
5.6 GHz 0.939 179.39 1.53 43.24 0.020 -37.07 0.605 -147.48
5.8 GHz 0.940 178.96 1.46 41.69 0.019 -38.27 0.616 -148.24
6.0 GHz 0.941 178.54 1.40 40.17 0.019 -39.43 0.627 -149.01
To download the s-parameters in s2p format, go to the CGH60015D Product Page and click on the documentation tab.
7CGH60015D Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Typical Die S-Parameters (Small Signal, VDS = 28 V, IDQ = 500 mA, magnitude / angle)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0.940 -129.62 18.94 109.96 0.020 20.83 0.303 -122.59
600 MHz 0.936 -137.35 16.21 105.32 0.021 16.37 0.304 -128.82
700 MHz 0.934 -143.16 14.12 101.63 0.021 12.86 0.306 -133.18
800 MHz 0.933 -147.68 12.48 98.57 0.022 9.97 0.309 -136.30
900 MHz 0.932 -151.28 11.17 95.95 0.022 7.54 0.312 -138.55
1.0 GHz 0.931 -154.23 10.10 93.66 0.022 5.42 0.315 -140.20
1.1 GHz 0.930 -156.68 9.21 91.60 0.022 3.55 0.319 -141.41
1.2 GHz 0.930 -158.76 8.46 89.74 0.022 1.85 0.323 -142.30
1.3 GHz 0.930 -160.55 7.81 88.01 0.022 0.31 0.327 -142.95
1.4 GHz 0.930 -162.10 7.26 86.40 0.022 -1.12 0.332 -143.43
1.5 GHz 0.930 -163.47 6.77 84.88 0.022 -2.46 0.337 -143.77
1.6 GHz 0.930 -164.68 6.34 83.45 0.022 -3.72 0.342 -144.01
1.7 GHz 0.930 -165.76 5.96 82.07 0.022 -4.92 0.347 -144.19
1.8 GHz 0.930 -166.74 5.62 80.75 0.022 -6.06 0.353 -144.30
1.9 GHz 0.930 -167.62 5.32 79.48 0.022 -7.16 0.358 -144.38
2.0 GHz 0.930 -168.43 5.04 78.24 0.022 -8.21 0.364 -144.44
2.1 GHz 0.930 -169.18 4.79 77.05 0.022 -9.23 0.370 -144.48
2.2 GHz 0.930 -169.86 4.57 75.88 0.022 -10.22 0.376 -144.51
2.3 GHz 0.931 -170.50 4.36 74.74 0.022 -11.18 0.383 -144.53
2.4 GHz 0.931 -171.10 4.16 73.63 0.021 -12.12 0.389 -144.56
2.5 GHz 0.931 -171.65 3.99 72.54 0.021 -13.03 0.395 -144.59
2.6 GHz 0.931 -172.17 3.82 71.46 0.021 -13.92 0.402 -144.63
2.7 GHz 0.931 -172.66 3.67 70.41 0.021 -14.80 0.408 -144.68
2.8 GHz 0.932 -173.13 3.53 69.38 0.021 -15.65 0.415 -144.74
2.9 GHz 0.932 -173.57 3.39 68.36 0.021 -16.49 0.422 -144.80
3.0 GHz 0.932 -173.99 3.27 67.35 0.021 -17.32 0.428 -144.89
3.2 GHz 0.933 -174.77 3.04 65.39 0.021 -18.93 0.442 -145.08
3.4 GHz 0.933 -175.49 2.84 63.47 0.021 -20.49 0.455 -145.33
3.6 GHz 0.934 -176.16 2.66 61.60 0.020 -22.00 0.469 -145.63
3.8 GHz 0.935 -176.78 2.50 59.77 0.020 -23.47 0.482 -145.97
4.0 GHz 0.935 -177.36 2.36 57.98 0.020 -24.90 0.495 -146.36
4.2 GHz 0.936 -177.92 2.22 56.22 0.020 -26.30 0.508 -146.78
4.4 GHz 0.937 -178.44 2.10 54.50 0.019 -27.66 0.521 -147.24
4.6 GHz 0.937 -178.95 1.99 52.81 0.019 -28.99 0.534 -147.73
4.8 GHz 0.938 -179.43 1.89 51.16 0.019 -30.28 0.546 -148.25
5.0 GHz 0.939 -179.89 1.80 49.53 0.019 -31.55 0.558 -148.80
5.2 GHz 0.940 179.66 1.71 47.93 0.019 -32.78 0.570 -149.36
5.4 GHz 0.940 179.22 1.63 46.36 0.018 -33.99 0.582 -149.95
5.6 GHz 0.941 178.80 1.55 44.82 0.018 -35.17 0.593 -150.55
5.8 GHz 0.942 178.38 1.48 43.30 0.018 -36.32 0.604 -151.16
6.0 GHz 0.942 177.98 1.42 41.81 0.018 -37.45 0.615 -151.78
To download the s-parameters in s2p format, go to the CGH60015D Product Page and click on the documentation tab.
8CGH60015D Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Electrostatic Discharge (ESD) Classications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C
Product Ordering Information
Order Number Description Unit of Measure
CGH60015D GaN HEMT bare die Each
9CGH60015D Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2006-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic
product and/or vendor endorsement, sponsorship or association.
Disclaimer
Specicationsaresubjecttochangewithoutnotice.Cree,Inc.believestheinformationcontainedwithinthisdatasheettobeaccurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injuryordeath,orinapplicationsfortheplanning,construction,maintenanceordirectoperationofanuclearfacility.CREEandtheCREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639