NJG1107KB2
- 1 -
1.5/1.9GHz BAND LOW NOISE AMPLIFIER GaAs MMIC
nGENERAL DESCRIPTION nPACKAGE OUTLINE
NJG1107KB2 is a Low Noise Amplifier GaAs MMIC
designed for 1.5GHz and 1.9GHz band digital cellular phone
and Japanese PHS handsets. This amplifier provides low
noise figure, high gain and high IP3 operated by single low
positive power supply.
This amplifier includes internal self-bias circuit and input
DC blocking capacitor.
An ultra small and ultra thin package of FLP6 is adopted.
nFEATURES
lLow voltage operation +2.7V typ.
lLow current consumption 3.0mA typ.
lHigh small signal gain 17dB typ. @f=1.49GHz
15dB typ. @f=1.96GHz
lLow noise figure 1.2dB typ. @f=1.49GHz
1.2dB typ. @f=1.96GHz
lHigh Input IP3 -4.0dBm typ. @f=1.4900+1.4901GHz
-2.0dBm typ. @f=1.9600+1.9601GHz
lUltra small & ultra thin package FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)
l This amplifier can be tuned into various frequency range.(Best for 1.5GHz or 1.9GHz Band)
nPIN CONFIGURATION
Note: Specifications and description listed in this catalog are subject to change without prior notice.
NJG1107KB2
PIN Connection
1.RFout
2.GND
3.EXTCAP
4.GND
5.GND
6.RFin
AMP
1
2
3
6
5
4
Orientation Mark
KB2 Type
(Top View)
NJG1107KB2
- 2 -
nABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω)
PARAMETER SYMBOL CONDITIONS RATINGS UNIT
Drain Voltage VDD 6.0 V
Input Power Pin VDD=2.7V+15 dBm
Power Dissipation PD450 mW
Operating Temp. Topr -40~+85 °C
Storage Temp. Tstg -55~+125 °C
nELECTRICAL CHARACTERISTICS 1 (1.5GHz Band)
(VDD=2.7V, f=1.49GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT
Operating Frequency freq1 1.47 1.49 1.51 GHz
Drain Voltage VDD 2.5 2.7 5.5 V
Operating Current IDD RF OFF -3.0 3.8 mA
Small Signal Gain Gain 15.0 17.0 19.0 dB
Gain Flatness Gflat f=1.47~1.51GHz -0.5 1.0 dB
Noise Figure NF -1.2 1.4 dB
Pout at 1dB Gain
Compression point P-1dB -6.0 -2.0 -dBm
Input 3rd Order
Intercept Point IIP3 f=1.49+1.4901GHz
RFin=-35dBm -6.0 -4.0 -dBm
RF Input Port
VSWR VSWRi-1.6 2.2
RF Output Port
VSWR VSWRo1.6 2.2
nELECTRICAL CHARACTERISTICS 2 (1.9GHz Band)
(VDD=2.7V, f=1.96GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT
Operating Frequency freq2 1.89 1.96 1.99 GHz
Drain Voltage VDD 2.5 2.7 5.5 V
Operating Current IDD RF OFF -3.0 3.8 mA
Small Signal Gain Gain 13.0 15.0 17.0 dB
Gain Flatness Gflat f=1.89~1.99GHz -0.5 1.0 dB
Noise Figure NF -1.2 1.4 dB
Pout at 1dB Gain
Compression point P-1dB -3.0 +1.0 -dBm
Input 3rd order
Intercept Point IIP3 f=1.96+1.9601GHz
RFin=-30dBm -6.0 -2.0 -dBm
RF Input Port
VSWR VSWRi-1.6 2.2
RF Output Port
VSWR VSWRo-1.6 2.2
NJG1107KB2
- 3 -
nELECTRICAL CHARACTERISTICS 3 (1.8GHz Band)
(VDD=2.7V, f=1.76GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT
Operating Frequency freq3 1.75 1.76 1.78 GHz
Drain Voltage VDD 2.5 2.7 5.5 V
Operating Current IDD RF OFF -3.0 3.8 mA
Small Signal Gain Gain -16.0 -dB
Gain Flatness Gflat f=1.75~1.78GHz -0.5 -dB
Noise Figure NF -1.2 -dB
Pout at 1dB
Compression point P-1dB -1.1 -dBm
Input 3rd order
Intercept Point IIP3 f=1.76+1.7601GHz
RFin=-35dBm --2.0 -dBm
RF Input Port
VSWR VSWRi-1.6 - -
RF Output Port
VSWR VSWRo-1.6 - -
nELECTRICAL CHARACTERISTICS 4 (1.5GHz Band ,Low Gain Version)
(VDD=2.7V, f=1.49GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT
Operating Frequency freq4 1.47 1.49 1.51 GHz
Drain Voltage VDD 2.5 2.7 5.5 V
Operating Current IDD RF OFF -3.0 3.8 mA
Small Signal Gain Gain -14.0 -dB
Gain Flatness Gflat f=1.47~1.51GHz -0.5 -dB
Noise Figure NF -1.2 -dB
Pout at 1dB
Compression point P-1dB -0.0 -dBm
Input 3rd order
Intercept Point IIP3 f=1.49+1.4901GHz
RFin=-35dBm --3.0 -dBm
RF Input Port
VSWR VSWRi-1.6 -
RF Output Port
VSWR VSWRo-1.6 -
NJG1107KB2
- 4 -
nPIN CONFIGURATION
Pin Function Description
1RFout
RF output and voltage supply pin. External matching circuits and a bypass capacitor
is required. L3 is a RF choke inductor and C1 is a DC blocking capacitor. These
elements are used as output matching circuit. C2 is a bypass capacitor. (Please refer
to “TEST CIRCUIT”)
2,4,5 GND Ground pin. To keep good RF grounding performance, please use multiple via holes
to connect with ground plane and this pin.
3EXTCAP An external bypass capacitor is required. (Please refer to “TEST CIRCUIT”)
6RFin RF input pin. A DC blocking capacitor is not required. An external matching circuit is
required. (Please refer to “TEST CIRCUIT”)
NJG1107KB2
- 5 -
nTYPICAL CHARACTERISTICS (1.5GHz Band)
0.6
1
1.4
1.8
2.2
2.6
0
4
8
12
16
20
1.4 1.44 1.48 1.52 1.56 1.6
NF,Gain vs. frequency
(VDD=2.7V,IDD=3mA)
NF (dB)
Gain (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
0.5 11.5 22.5
S21,S11,S22,S12 vs. frequency
(VDD=2.7V,IDD=3mA)
S21,S11,S22 (dB)
S12 (dB)
frequency (GHz)
S11
S22
S21
S12
-30
-20
-10
0
10
-40 -30 -20 -10 0-30
-25
-20
-15
-10
-5
0
5
10
Pout (dBm)
Pin (dBm)
Pout vs. Pin
(VDD=2.7V,f=1.49GHz)
+1.17dBm
P-1dB
-80
-70
-60
-50
-40
-30
-20
-10
0
10
-40 -30 -20 -10 0
(VDD=2.7V,IDD=3mA,f=1.49+1.4901GHz)
Pout, IM3 vs. Pin
Pin (dBm)
Pout,IM3 (dBm)
IIP3
-3.15dBm
IM3
Pout
16
16.5
17
17.5
18
18.5
19
2.5 33.5 44.5 55.5
Gain vs. V DD (f=1.49GHz)
VDD (V)
Gain (dB)
0.8
0.9
1
1.1
1.2
1.3
2.9
3
3.1
3.2
3.3
3.4
2.5 33.5 44.5 55.5
NF, IDD vs. VDD (f=1.49GHz)
NF (dB)
IDD (mA)
VDD (V)
NJG1107KB2
- 6 -
nTYPICAL CHARACTERISTICS (1.5GHz Band)
Equations of OIP3 and IIP3
23IM-Pout×3
=3OIP
Gain-3OIP=3IIP @ Pin=-35dBm
-6
-4
-2
0
2
4
6
8
2.5 33.5 44.5 55.5
P-1dB vs. V DD (f=1.49GHz)
P-1dB (dBm)
VDD (V)
-5
-4
-3
-2
-1
0
1
2
3
4
5
10
11
12
13
14
15
16
17
18
19
20
2.5 33.5 44.5 55.5
IIP3, OIP3 vs. V DD
(f=1.49+1.4901GHz, Pin=-35dBm)
OIP3 (dBm)
IIP3 (dBm)
VDD (V)
16
17
18
19
20
2.25
2.5
2.75
3
3.25
-40 -20 020 40 60 80 100
Gain, IDD vs. Temperature
(VDD=2.7V, f=1.49GHz)
Gain (dB)
IDD (mA)
Temperature ( )
oC
0.4
0.8
1.2
1.6
2
2.4
-3
-2
-1
0
1
2
-40 -20 020 40 60 80 100
NF, P-1dB vs. Temperature
(VDD=2.7V, f=1.49GHz)
NF (dB)
P-1dB (dBm)
Temperature ( )
oC
-8
-7
-6
-5
-4
-3
-2
-1
0
13
14
15
16
17
18
19
20
21
-40 -20 020 40 60 80 100
IIP3, OIP3 vs. Temperature
(VDD=2.7V, f=1.49+1.4901GHz, Pin=-35dBm)
IIP3 (dBm)
OIP3 (dBm)
Temperature ( )
oC
NJG1107KB2
- 7 -
nTYPICAL CHARACTERISTICS (1.5GHz Band)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S12 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S12 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S21 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S21 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S22 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S22 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S11 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S11 (dB)
frequency (GHz)
NJG1107KB2
- 8 -
nTYPICAL CHARACTERISTICS (1.9GHz Band)
14
14.5
15
15.5
16
16.5
17
2.5 33.5 44.5 55.5
Gain vs. V DD (f=1.96GHz)
VDD (V)
Gain (dB)
0.8
0.9
1
1.1
1.2
1.3
2.9
3
3.1
3.2
3.3
3.4
2.5 33.5 44.5 55.5
NF, IDD vs. VDD (f=1.96GHz)
NF (dB)
IDD (mA)
VDD (V)
0.6
1
1.4
1.8
2.2
2.6
0
4
8
12
16
20
1.8 1.84 1.88 1.92 1.96 2
NF,Gain vs. frequency
(VDD=2.7V,IDD=3mA)
NF (dB)
Gain (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
11.5 22.5 3
S21,S11,S22,S12 vs. frequency
(VDD=2.7V,IDD=3mA)
S21,S11,S22 (dB)
S12 (dB)
frequency (GHz)
S11
S22
S21
S12
-30
-20
-10
0
10
-40 -30 -20 -10 0
Pout (dBm)
Pin (dBm)
Pout vs. Pin
(VDD=2.7V,f=1.96GHz)
+1.17dBm
P-1dB
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
-40 -30 -20 -10 0
(VDD=2.7V,IDD=3mA,f=1.96+1.9601GHz)
Pout, IM3 vs. Pin
Pin (dBm)
Pout,IM3 (dBm)
IIP3
-2.21dBm
IM3
Pout
NJG1107KB2
- 9 -
nTYPICAL CHARACTERISTICS (1.9GHz Band)
Equations of OIP3 and IIP3
23IM-Pout×3
=3OIP
Gain-3OIP=3IIP @ Pin=-30dBm
-6
-4
-2
0
2
4
6
8
2.5 33.5 44.5 55.5
P-1dB vs. V DD (f=1.96GHz)
P-1dB (dBm)
VDD (V)
0.4
0.8
1.2
1.6
2
2.4
-3
-2
-1
0
1
2
-40 -20 020 40 60 80 100
NF, P-1dB vs. Temperature
(VDD=2.7V, f=1.96GHz)
NF (dB)
P-1dB (dB)
Temperature ( )
oC
-4
-3
-2
-1
0
1
2
3
4
5
6
10
11
12
13
14
15
16
17
18
19
20
2.5 33.5 44.5 55.5
IIP3, OIP3 vs. V DD
(f=1.96+1.9601GHz, Pin=-30dBm)
OIP3 (dBm)
IIP3 (dBm)
VDD (V)
14
15
16
17
18
2.25
2.5
2.75
3
3.25
-40 -20 020 40 60 80 100
Gain, IDD vs. Temperature
(VDD=2.7V, f=1.96GHz)
Gain (dB)
IDD (mA)
Temperature ( )
oC
-7
-6
-5
-4
-3
-2
-1
0
1
12
13
14
15
16
17
18
19
20
-40 -20 020 40 60 80 100
IIP3, OIP3 vs. Temperature
(VDD=2.7V, f=1.96+1.9601GHz, Pin=-30dBm)
IIP3 (dBm)
OIP3 (dBm)
Temperature ( )
oC
NJG1107KB2
- 10 -
nTYPICAL CHARACTERISTICS (1.9GHz Band)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S11 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S11 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S22 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S22 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S21 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S21 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S12 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S12 (dB)
frequency (GHz)
NJG1107KB2
- 11 -
nTYPICAL CHARACTERISTICS (1.8GHz Band)
0.6
1
1.4
1.8
2.2
2.6
0
4
8
12
16
20
1.65 1.7 1.75 1.8 1.85
NF,Gain vs. frequency
(VDD=2.7V,IDD=3mA)
NF (dB)
Gain (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
11.5 22.5 3
S21,S11,S22,S12 vs. frequency
(VDD=2.7V,IDD=3mA)
S21,S11,S22 (dB)
S12 (dB)
frequency (GHz)
S11
S22
S21
S12
-30
-20
-10
0
10
-40 -30 -20 -10 0
Pout (dBm)
Pin (dBm)
Pout vs. Pin
(VDD=2.7V,f=1.76GHz)
+1.14dBm
P-1dB
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
-40 -30 -20 -10 0
(VDD=2.7V,IDD=3mA,f=1.76+1.7601GHz)
Pout, IM3 vs. Pin
Pin (dBm)
Pout,IM3 (dBm)
IIP3
-2.01dBm
IM3
Pout
NJG1107KB2
- 12 -
nTYPICAL CHARACTERISTICS (1.8GHz Band)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S11 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S11 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20-50
-40
-30
-20
-10
0
10
20
30
40
50
S22 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S22 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20-50
-40
-30
-20
-10
0
10
20
30
40
50
S21 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S21 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S12 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S12 (dB)
frequency (GHz)
NJG1107KB2
- 13 -
nTYPICAL CHARACTERISTICS (1.5GHz Band, Low Gain Version)
0.6
1
1.4
1.8
2.2
2.6
0
4
8
12
16
20
1.4 1.44 1.48 1.52 1.56 1.6
NF,Gain vs. frequency
(VDD=2.7V,IDD=3mA)
NF (dB)
Gain (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
0.5 11.5 22.5
S21,S11,S22,S12 vs. frequency
(VDD=2.7V,IDD=3mA)
S21,S11,S22 (dB)
S12 (dB)
frequency (GHz)
S11
S22
S21
S12
-30
-25
-20
-15
-10
-5
0
5
10
-40 -35 -30 -25 -20 -15 -10 -5 0
Pout (dBm)
Pin (dBm)
Pout vs. Pin
(VDD=2.7V,f=1.49GHz)
+0.00dBm
P-1dB
-80
-70
-60
-50
-40
-30
-20
-10
0
10
-40 -35 -30 -25 -20 -15 -10 -5 0
(VDD=2.7V,IDD=3mA,f=1.49+1.4901GHz)
Pout, IM3 vs. Pin
Pin (dBm)
Pout,IM3 (dBm)
IIP3
-2.89dBm
IM3
Pout
NJG1107KB2
- 14 -
nTYPICAL CHARACTERISTICS (1.5GHz Band, Low Gain Version)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S11 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S11 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S22 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S22 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S21 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S21 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0246810 12 14 16 18 20
S12 vs. frequency ( to 20GHz)
(VDD=2.7V,IDD=3mA)
S12 (dB)
frequency (GHz)
NJG1107KB2
- 15 -
nTYPICAL CHARACTERISTICS
Scattering Parameter Table
VDD=2.7V, IDD=3mA, Zo=50Ω
S11 S21 S12 S22
Freq
(GHz)mag
(units)ang
(deg) mag
(units) ang
(deg) mag
(units) ang
(deg) mag
(units) ang
(deg)
0.1 1.000 -3.130 2.094 176.987 0.012 -25.995 0.965 -1.855
0.2 0.986 -4.217 2.074 171.002 0.002 110.707 0.967 -1.782
0.3 0.986 -6.161 2.046 165.318 0.007 92.945 0.962 -3.088
0.4 0.972 -8.026 2.012 159.545 0.003 62.606 0.960 -3.801
0.5 0.965 -10.209 1.991 153.712 0.005 103.324 0.961 -5.113
0.6 0.957 -12.032 1.943 147.933 0.004 96.002 0.953 -6.159
0.7 0.943 -13.490 1.909 143.180 0.005 75.842 0.949 -7.623
0.8 0.929 -15.249 1.851 138.232 0.008 90.203 0.940 -9.144
0.9 0.910 -16.014 1.793 133.807 0.006 93.660 0.931 -9.943
1.0 0.903 -16.960 1.765 129.856 0.009 85.810 0.928 -10.876
1.1 0.894 -18.131 1.710 125.443 0.009 95.094 0.931 -12.170
1.2 0.879 -18.645 1.673 121.935 0.010 92.781 0.921 -13.089
1.3 0.864 -19.500 1.636 118.442 0.011 91.381 0.919 -14.156
1.4 0.852 -21.338 1.627 114.415 0.012 100.617 0.919 -14.843
1.5 0.843 -22.810 1.578 110.659 0.014 99.522 0.918 -16.259
1.6 0.826 -24.483 1.541 107.013 0.014 99.175 0.914 -17.088
1.7 0.818 -24.447 1.513 104.077 0.015 100.001 0.918 -18.228
1.8 0.810 -26.509 1.503 100.734 0.016 103.271 0.925 -19.508
1.9 0.801 -27.539 1.489 97.286 0.018 106.687 0.920 -20.507
2.0 0.794 -29.642 1.452 93.725 0.019 108.548 0.921 -21.024
2.1 0.783 -30.807 1.453 90.359 0.020 106.305 0.924 -22.491
2.2 0.782 -33.473 1.421 86.597 0.022 107.071 0.922 -24.160
2.3 0.770 -34.972 1.426 83.223 0.022 107.349 0.920 -25.779
2.4 0.772 -35.870 1.391 79.970 0.026 109.866 0.919 -27.462
2.5 0.760 -37.091 1.397 76.578 0.027 112.983 0.914 -29.724
2.6 0.761 -38.975 1.376 73.069 0.030 109.600 0.920 -32.086
2.7 0.757 -40.916 1.359 68.921 0.031 106.376 0.907 -35.211
2.8 0.756 -41.260 1.322 65.450 0.034 109.318 0.902 -38.255
2.9 0.757 -42.651 1.294 62.030 0.035 106.983 0.893 -41.787
3.0 0.752 -42.892 1.267 58.521 0.036 108.989 0.879 -45.326
Scattering Parameter
Measurement Circuit
1
6
5
4 3
2
S11 S22
Ref.
1000pF
Ref.
NJG1107KB2
- 16 -
nTYPICAL CHARACTERISTICS (1.5GHz Band, Low Gain Version)
Scattering Parameter Table
VDD=2.7V, IDD=3mA, Zo=50Ω
S11 S21 S12 S22
Freq
(GHz)mag
(units)ang
(deg) mag
(units) ang
(deg) mag
(units) ang
(deg) mag
(units) ang
(deg)
0.1 1.011 -1.815 0.619 -137.421 0.006 150.071 0.998 -1.269
0.2 1.023 -4.177 1.049 -141.929 0.005 111.664 0.996 -3.638
0.3 1.027 -6.876 1.402 -152.156 0.004 72.732 0.999 -4.808
0.4 1.036 -10.171 1.681 -164.509 0.008 71.899 0.995 -6.754
0.5 1.029 -13.604 1.843 -176.486 0.006 80.582 0.993 -8.514
0.6 1.027 -17.041 1.967 172.550 0.006 96.630 0.982 -9.913
0.7 1.007 -20.090 1.997 162.037 0.010 79.136 0.983 -12.453
0.8 0.996 -22.496 1.994 153.204 0.009 78.039 0.976 -14.051
0.9 0.978 -25.098 1.967 144.936 0.009 80.635 0.967 -15.603
1.0 0.961 -27.178 1.925 137.106 0.008 73.136 0.967 -17.199
1.1 0.940 -28.800 1.857 131.070 0.010 71.678 0.961 -17.813
1.2 0.923 -30.761 1.825 124.735 0.012 76.438 0.954 -19.024
1.3 0.905 -32.462 1.785 118.431 0.011 77.174 0.948 -21.016
1.4 0.889 -33.815 1.719 113.194 0.010 78.254 0.946 -22.555
1.5 0.877 -34.976 1.679 107.647 0.014 83.456 0.947 -24.779
1.6 0.860 -36.777 1.610 102.741 0.014 73.747 0.947 -26.267
1.7 0.849 -37.774 1.568 98.621 0.014 80.053 0.942 -27.354
1.8 0.834 -39.260 1.534 94.075 0.015 85.009 0.938 -28.669
1.9 0.822 -40.858 1.490 89.890 0.015 83.753 0.939 -29.677
2.0 0.814 -42.312 1.464 85.613 0.017 88.727 0.939 -31.456
2.1 0.801 -43.887 1.435 81.588 0.017 92.695 0.938 -32.776
2.2 0.791 -45.820 1.393 77.520 0.021 98.708 0.939 -34.232
2.3 0.784 -47.584 1.365 73.663 0.019 95.532 0.936 -35.915
2.4 0.773 -49.825 1.332 69.756 0.021 93.049 0.937 -36.454
2.5 0.766 -51.948 1.311 66.211 0.024 93.358 0.940 -38.089
2.6 0.756 -54.101 1.285 62.518 0.025 97.398 0.942 -39.619
2.7 0.753 -56.479 1.260 58.997 0.028 99.809 0.946 -40.798
2.8 0.748 -59.220 1.229 55.237 0.029 93.593 0.949 -42.180
2.9 0.745 -61.715 1.213 51.930 0.031 100.273 0.947 -43.117
3.0 0.744 -64.848 1.189 48.547 0.031 97.032 0.950 -44.659
1
6
5
4 3
2
S11 S22
Ref.
10pF
Ref.
Scattering Parameter
Measurement Circuit
NJG1107KB2
- 17 -
■
TEST CIRCUIT 1 (1.5/1.8/1.9GHz Band)
■
TEST CIRCUIT 2 (1.5GHz Band, Low Gain Version)
AMP
4
5
6
3
2
1
RF Output
C2
C1
L3VDD=2.7V
R1
EXTCAP
GND
C3
GND
RF Input
GND
L1
L2
AMP
3
2
1
4
5
6
GND
RF Input
L1
L2
GND EXTCAP
GND
RF Output
C1
C2
L3VDD=2.7V
L4
C3
(Top View)
(Top View)
NJG1107KB2
- 18 -
L1
L2
R1
L3 C1
C2
C3
NJG1107
RF IN RF OUT
nRECOMMENDED PCB DESIGN
Parts List
Constant Comment
Parts ID 1.5GHz
Band 1.9GHz
Band 1.8GHz
Band 1.5GHzBand
Low Gain
L1 10nH 5.6nH 6.8nH 10nH TAIYO-YUDEN HK1005 Series
L2 12nH 5.6nH 8.2nH 12nH TAIYO-YUDEN HK1005 Series
L3 5.6nH 3.9nH 6.8nH 6.8nH TAIYO-YUDEN HK1005 Series
L4 15nH 10nH 12nH -TAIYO-YUDEN HK1005 Series
C1 5pF 13pF 30pF 0.75pF MURATA GRM36 Series
C2 1000pF 1000pF 1000pF 1000pF MURATA GRM36 Series
C3 1000pF 1000pF 1000pF 10pF MURATA GRM36 Series
R1 - - - 36Ω
PCB: FR4 t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm(Zo=50Ω)
PCB SIZE: 14.0 x 14.0mm
1.5/1.8/1.9GHz Band 1.5GHz Band, Low Gain Version
L1
L2 L3
L4 C1
C2
C3
NJG1107
RF IN RF OUT
(Top View)(Top View)
NJG1107KB2
- 19 -
nPACKAGE OUTLINE (FLP6-B2)
Lead material : Copper
Lead surface finish: Solder plating
Molding material : Epoxy resin
UNIT : mm
Weight : 6.5mg
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
2.0±0.1
6 5 4
1 2 3
0.20.2
2.1±0.1
1.7±0.1
0.65 0.65
0.75±0.05 +0.1
0.2-0.05
+0.1
0.1 0.1
0.15-0.05
Mouser Electronics
Authorized Distributor
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NJG1107KB2-TE1