MITSUBISHI LASER DIODES ML7XX11 SERIES InGaAsPMQWDFB LASER DIODES va ~=6| ML776H11F, ML774F11F ML7XX11 series are MQW*DFB** light beam around 1310nm. They are well suited for light source in longdistance digital transmission systems. The ML776H11F are hermetically sealed devices having the photodiode for optical output monitoring. %* MQW : Multiple Quantum Well * *DFB : Distributed Feedback ABSOLUTE MAXIMUM RATINGS laser diodes emitting @Low threshold current (typical 10mA) @Stable single transverse mode oscillation @High-side mode suppression ratio : typical 40dB (Tc= 40 to +85C) @High speed pulse response (rise/fall time typical @Excellent temperature characteristics APPLICATION Wide temperature range digital transmission system 0.2nsec) Symbol Parameter Conditions Ratings Unit Po Light output power cw 6 mW VAL Reverse Voltage (Laser diode) = 2 V VRD Reverse Voltage (Photodiode) 20 V IFD Forward current (Photodiode) _ 2 mA Te Case temperature = 40~+85 Cc Tstg Storage temperature _ 40~+100 Cc ELECTRICAL/OPTICAL CHARACTERISTICS (Tc= 25) Symbol Parameter Test conditions Limits Unit Min. Typ. Max. Ith Threshold current CW = 6 20 mA lop Operating current CW,Po = 5mw _ 18 40 mA VoPp Operating voltage CW,Po = 5mW _ 1.4 1.8 4 7 Slope efficiency CW,Po = 5mW 0.3 0.4 _ mW/mA| AP Peak wavelength CW,Po = S5mW 1290 1310 1330 nm 61 Beam divergence angle (parallel) CW,Po = 5mW _ 25 35 deg. 64 Beam divergence angle (perpendicular) CW,Po = 5mW _ 30 40 deg. Im Monitoring output current (Photodiode)| CW,Po = 5mW,Vrp = 1V,RL* = 100 _ 0.2 _ mA tr,tt Rise and fall time IF = Ith,Po = 5mW,10% ~90% _ 0.2 0.4 ns SMSR Side mode suppression ratio] CW,Po = 5mW,40~+85C 30 40 = dB * RL: Load resistance of photodiode NOV. ' 97 OUTLINE DRAWINGS MITSUBISHI LASER DIODES ML7XX11 SERIES InGaAsPMQWDFB LASER DIODES $5.68 08 $425 $3.55+01 in aac) H 3 a 72) A a 2 (0.4) 3 i+0.1 S 5 s g $2.0 MIN le wl 61.0 MIN S| 3 2 gle HH] #7 EF yy aNy Reference plane : ' gf l Uy. 3 = IF ri 2040.25 _ P.C.D ; 4 4~ 0.45-+0.05 " (1) (2) Dimension : mm (4) (3) Case is PD Ss LD (2) (1) ML776H11F (4) (3) Case AW JA PD Ss LD @) (2) ML774F11F NOV. ' 97 TYPICAL CHARACTERISTICS Light output Po (mW) ({mW/mA) t \ Slope efficiency 4 Fig.3 (mA) Forward current 10 self [| LIN i LL 0 20 40 60 80 100 Forward current IF (mA) Fig.1 Light output vs. forward current ne T_] @Po=5mW 0.5 re Pp 0.4 02 0.1 6040 -20 0 20 40 60 80 100 Case temperature Tc (C) Temperature dependence of slope efficiency 50 ] 40 | oc To=85C / Fe 30 / 20 | ff Forward voitage (V) Fig.5-1 Foward current vs. voltage Threshold current Ith (mA) Relative intensity (10dB/div) Operating current lop (mA) MITSUBISHI LASER DIODES ML7XX11 SERIES InGaAsP -MQW DFB LASER DIODES 100 70 50 40 30 20 mM OO NO 60 4020 0 20 40 60 80 Case temperature Tc (C) 100 Fig.2 Temperature dependence of Ith and lop 1310 1 Wavelength A (nm) Fig.5 Spectrum NOV. ' 97 MITSUBISHI LASER DIODES ML7XX11 SERIES InGaAsPMQW DFB LASER DIODES TYPICAL CHARACTERISTICS (Cont.) 1325 T T @Po=5mW 1320 L La 1315 4 1310} +4 1305 Peak wavelength A (nm) 1300 604020 0 20 40 60 80 100 Case temperature Tc (C) Fig.6 Temperature dependence of peak wavelength 1.0 T T 2, =25C Te=25 aa Po=5mW ; ; ! LTA LAN J NE LN O95 0 60 =60 0 60 Relative light output Relative light output Angle (deg.) Angle (deg.) Fig.7-1 Far field pattern 6// Fig.7-2 Far field pattern 6 1 {| _ | / [ | ZL LZ 0 100 oO Relative intensity Light output Po (mW) wo 10 0% 0 0.2 0.4 200ps/div Monitoring output current Im (mA) Fig.8 Pulse respose characteristics Fig.9 Light output vs. monitoring output current