BC107
BC108
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
DESCRIPTION
The BC107 and BC108 are silicon planar
epitaxial NPN transistors in TO-18 metal case.
They are suitable for use in driver stages, low
noise input stages and signal processing circuits
of television reveivers. The PNP complemet for
BC107 is BC177.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BC107 BC108
VCBO Collector-Base Voltage (IE=0) 50 30 V
V
CEO Collector-Emitter Voltage (IB=0) 45 20 V
V
EBO Emitter-Base Voltage (IC=0) 6 5 V
I
CCollector Current 100 mA
Ptot Total Dissipation at Tamb ≤25 oC
at Tcase ≤25 oC0.3
0.75 W
W
Tstg Storage Temperature -55 to 175 oC
TjMax. Operating Junction Temperature 175 oC
TO-18
1/6
THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max 200
500
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE=0) for BC107
VCB =40V
V
CB =40V T
case =150o
C
for BC108
VCB =20V
V
CB =20V T
case =150o
C
15
15
15
15
nA
µA
µA
µA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC=10µA
for BC107
for BC108 50
30 V
V
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB=0)
I
C=10mA
for BC107
for BC108 45
20 V
V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC=0)
I
E=10µA
for BC107
for BC108 6
5V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC=10mA I
B=0.5mA
I
C=100mA I
B=5mA 70
200 250
600 mV
mV
VBE(sat)∗Base-Emitter
Saturation Voltage IC=10mA I
B=0.5mA
I
C=100mA I
B=5mA 750
950 mV
mV
VBE(on)∗Base-Emitter On
Voltage IC=2mA V
CE =5V
I
C=10mA V
CE =5V 550 650
700 700
770 mV
mV
hFE∗DC Current Gain IC=2mA V
CE =5V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
IC=10µAV
CE =5V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
110
110
200
110
110
200
420
40
40
100
120
90
150
120
90
150
270
450
220
450
800
220
450
800
hfe∗Small Signal Current
Gain IC=2mA V
CE =5V f=1KHz
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
IC=10mA V
CE = 10 V f = 100 MHz
250
190
300
370
190
300
500
2
∗
Pulsed: Pulse duration = 300 µs, duty cycle≤1%
BC107/BC108
2/6
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
CCBO Collector Base
Capacitance IE=0 V
CB =10V f=1MHz 4 6 pF
C
EBO Emitter Base
Capacitance IC=0 V
EB =0.5V f=1MHz 12 pF
NF Noise Figure IC=0.2mA V
CE =5V
f=1KHz R
g=2KΩB = 200Hz 210dB
h
ie Input Impedance IC=2mA V
CE =5V f=1KHz
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
4
3
4.8
5.5
3
4.8
7
KΩ
KΩ
KΩ
KΩ
KΩ
KΩ
KΩ
hre Reverse Voltage Ratio IC=2mA V
CE =5V f=1KHz
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
2.2
1.7
2.7
3.1
1.7
2.7
3.8
10-4
10-4
10-4
10-4
10-4
10-4
10-4
hoe Output Admittance IC=2mA V
CE =5V f=1KHz
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
30
13
26
30
13
26
34
µS
µS
µS
µS
µS
µS
µS
∗
Pulsed: Pulse duration = 300 µs, duty cycle≤1%
DCNormalized Current Gain. Collector--emitterSaturation Voltage.
BC107/BC108
3/6
PowerRating Chart.
Collector-baseCapacitance. TransitionFrequency.
BC107/BC108
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o45o
L
G
I
DA
F
E
B
H
C
TO-18 MECHANICAL DATA
0016043
BC107/BC108
5/6
Information furnishedis believedtobe accurateand reliable. However,SGS-THOMSON Microelectronics assumes no responsability forthe
consequencesof use ofsuch informationnor for any infringement of patentsor otherrights ofthird parties whichmay resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent or patent rights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare notauthorized for use ascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy - All Rights Reserved
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BC107/BC108
6/6
