BFR380F NPN Silicon RF Transistor Preliminary data * High current capability and low figure for 2 3 wide dynamic range application 1 * Low voltage operation * Ideal for low phase noise oscillators up to 3.5 GHz * Low noise figure: 1.1 dB at 1.8 GHz ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR380F Marking FCs Pin Configuration 1=B 2=E 3=C Package TSFP-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 14 Total power dissipation1) Ptot 380 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 V mA TS 95C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 145 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 2005-10-17 BFR380F Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 6 9 - V ICES - - 10 A ICBO - - 100 nA IEBO - - 1 A hFE 90 120 160 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 40 mA, VCE = 3 V, pulse measured 2 2005-10-17 BFR380F Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 11 14 - Ccb - 0.5 0.7 Cce - 0.2 - Ceb - 1 - GHz IC = 40 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F min IC = 8 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz - 1.1 - IC = 8 mA, VCE = 3 V, ZS = ZSopt , f = 3 GHz - 1.6 - - 13.5 - - 9.5 - Power gain, maximum available1) G ma IC = 40 mA, VCE = 3 V, Z S = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 40 mA, VCE = 3 V, Z S = ZSopt , ZL = ZLopt , f = 3 GHz |S 21e|2 Transducer gain dB IC = 40 mA, VCE = 3 V, Z S = ZL = 50 , f = 1.8 GHz - 11 - f = 3 GHz - 7 - IP 3 - 29 - P-1dB - 17 - Third order intercept point at output2) dBm VCE = 3 V, I C = 40 mA, Z S=ZL=50 , f = 1.8 GHz 1dB Compression point at output IC = 40 mA, VCE = 3 V, Z S=ZL=50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 2005-10-17 BFR380F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 9.965 27.69 1.64 30 1.678 1.322 116.7 8.789 1.529 6.949 6.949 0 0 fA V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = V fF ps mA V ns - 116.376 736 22.802 0.011 9.71 221 0.782 0.496 0 0.472 0 0.5 0.975 mA A m V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.107 0.2676 1.056 6.9739 0.2564 0.101 0.5 0.338 840 0.202 0.75 1.11 300 fA pA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B' C' L3 C E' C6 C2 L1 C5 C3 E L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = 0.556 0.675 0.381 43 123 66 10 36 47 nH nH nH fF fF fF fF fF fF Valid up to 6GHz EHA07524 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 4 2005-10-17 BFR380F Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 400 mW K/W RthJS Ptot 300 250 10 2 200 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 150 100 50 0 0 15 30 45 60 75 90 105 120 C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb= (VCB) Ptotmax/P totDC = (tp) f = 1MHz 10 1 1.6 Ptotmax /PtotDC pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Ccb 1.2 1 0.8 0.6 0.4 0.2 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 2 4 6 8 10 12 V 16 VCB 5 2005-10-17 BFR380F Third order Intercept Point IP3=(IC) Transition frequency fT= (IC) (Output, ZS=ZL=50) f = 1GHz VCE = parameter, f = 1.8GHz VCE = parameter 16 32 dBm GHz 28 4V 26 3V 5V 14 13 3V 12 2V 22 2V fT IP3 24 20 11 18 10 16 1V 1V 9 14 8 0.7V 12 7 10 6 8 5 6 4 0 10 20 30 40 50 60 70 mA 4 0 90 10 20 30 40 50 60 80 mA 70 IC 100 IC Power gain Gma, Gms = (IC) f = 1.8GHz Power Gain Gma, Gms = (f) VCE = parameter VCE = parameter 45 15 dB dB Ic = 40mA 5V 35 13 3V 2V 5V 2V 1V 0.7V G G 30 12 25 11 20 1V 10 15 9 10 0.7V 8 7 0 10 20 30 40 50 60 70 80 mA 5 0 0 100 IC 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5 f 6 2005-10-17 BFR380F Power Gain |S21| = (f) Power Gain Gma, Gms = (VCE): | S21| = (VCE): - - - - VCE = parameter f = parameter 40 dB 21 dB Ic = 40mA Ic = 40mA 0.9GHz 19 18 30 0.9GHz 16 5V 2V 1V 0.7V 25 20 G G 17 15 14 1.8GHz 13 15 12 1.8GHz 11 10 10 9 5 8 0 0 0.5 1 1.5 2 2.5 3.5 GHz 3 7 0 4.5 1 2 3 4 5 V 6 8 VCE f Power gain Gma, Gms = (I C) VCE = 3V Noise figure F = (I C) VCE = 3V, ZS = ZSopt f = parameter 22 dB 3.5 0.9GHz 19 3 17 2 13 F [dB] G 2.5 15 1.8GHz 1.5 11 2.4GHz f = 4GHz 3GHz 9 1 f = 3GHz f = 2.4GHz f = 1.8GHz 4GHz 7 5 0 20 40 60 80 f = 0.9GHz 0.5 mA 120 0 IC 0 10 20 30 40 50 60 70 80 I [mA] c 7 2005-10-17 BFR380F Noise figure F = (IC ) Noise figure F = (f) VCE = 3V, f = 1.8 GHz VCE = 3V, ZS = ZSopt 4 3 3.5 2.5 3 2 F [dB] F [dB] 2.5 2 1.5 ZS = 50 1 1.5 I = 40mA C 1 IC = 8.0mA ZS = ZSopt 0.5 0.5 0 0 10 20 30 40 50 60 70 0 80 I [mA] 0 1 2 3 4 5 f [GHz] c Source impedance for min. noise figure vs. frequency VCE = 3 V, I C = 8.0mA/40.0mA 1 1.5 2 0.5 0.4 3 0.3 4 0.2 5 1.8GHz 0.1 0.9GHz 10 2.4GHz 0.1 0 0.2 0.3 0.4 0.5 3GHz -0.1 1 1.5 2 3 4 5 I = 8.0mA c -10 Ic = 40mA -0.2 -5 -4 4GHz -0.3 -3 -0.4 -0.5 -2 -1 -1.5 8 2005-10-17 Package TSFP-3 BFR380F Package Outline 0.2 0.05 0.55 0.04 1 1.2 0.05 0.2 0.05 3 2 0.2 0.05 10 MAX. 0.8 0.05 1.2 0.05 0.15 0.05 0.4 0.05 0.4 0.05 Foot Print 1.05 0.45 0.4 0.4 0.4 Marking Layout Manufacturer Type code Pin 1 BCR847BF Example Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 1.2 1.5 8 0.3 Pin 1 0.7 1.35 9 2005-10-17 BFR380F Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. 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