ST730CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 990 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case TO-200AC (B-PUK) RoHS COMPLIANT * Lead (Pb)-free * Designed and qualified for industrial level TO-200AC (B-PUK) TYPICAL APPLICATIONS * DC motor controls PRODUCT SUMMARY IT(AV) * Controlled DC power supplies 990 A * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2 t A 55 C 2000 A 25 C 17 800 60 Hz 18 700 50 Hz 1591 60 Hz 1452 Typical TJ UNITS 990 50 Hz VDRM/VRRM tq VALUES A kA2s 800 to 2000 V 150 s - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST730C..L VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM IDRM/IRRM MAXIMUM AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V mA V 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 Document Number: 94414 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com 80 www.vishay.com 1 ST730CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 990 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied UNITS A 55 (85) C 2000 17 800 No voltage reapplied 100 % VRRM reapplied VALUES 990 (375) 18 700 Sinusoidal half wave, initial TJ = TJ maximum 15 700 1591 1452 1125 100 % VRRM reapplied 15 910 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.98 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.12 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.32 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.27 Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.62 VTM Maximum holding current IH Typical latching current IL kA2s 1027 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 15 000 600 TJ = 25 C, anode supply 12 V resistive load 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.0 Typical turn-off time tq ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 150 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94414 Revision: 11-Aug-08 ST730CLPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 990 A TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 IGT TJ = 25 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD DC gate voltage not to trigger VGD TJ = TJ maximum A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 C Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger MAX. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.073 DC operation double side cooled 0.031 DC operation single side cooled 0.011 DC operation double side cooled 0.006 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet C K/W 14 700 (1500) N (kg) 255 g TO-200AC (B-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.009 0.009 0.006 0.006 120 0.011 0.011 0.010 0.011 90 0.014 0.014 0.015 0.015 60 0.020 0.020 0.021 0.021 30 0.036 0.036 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 94414 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST730CLPbF Series 130 Phase Control Thyristors (Hockey PUK Version), 990 A ST730C..L Series (Single Side Cooled) RthJ-hs (DC) = 0.073 K/ W 120 110 100 90 Conduction Angle 80 30 70 60 90 60 120 180 50 40 0 100 200 300 400 500 600 700 Maximum Allowable Heatsink Temperat ure (C) Maximum Allowa ble Heatsink Temperature (C) Vishay High Power Products 130 ST730C..L Series (Double Side Cooled) RthJ-hs (DC) = 0.031 K/ W 120 110 100 90 80 Conduction Period 70 30 60 60 50 90 120 40 30 DC 20 0 120 110 100 90 80 Conduc tion Period 70 60 30 50 60 90 120 40 30 180 20 0 200 400 600 DC 800 1000 1200 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (C) ST730C..L Series (Single Side Cooled) R thJ-hs (DC) = 0.073 K/ W 120 110 100 90 Conduction Angle 80 70 60 50 30 60 40 30 90 120 180 20 0 200 400 600 800 1000 1200 1400 Fig. 3 - Current Ratings Characteristics www.vishay.com 4 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (C) ST730C..L Series (Double Side Cooled) RthJ-hs (DC) = 0.031 K/ W 800 1200 1600 2000 2400 2500 180 120 90 60 30 2000 RMS Limit 1500 1000 Conduc tion Angle 500 ST730C..L Series TJ = 125C 0 0 200 400 600 800 1000 1200 1400 Average On-state Current (A) Fig. 5 - On-State Power Loss Characteristics Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 130 400 Average On-state Current (A) Fig. 4 - Current Ratings Characteristics Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 130 180 3500 DC 180 120 90 60 30 3000 2500 2000 RMS Limit 1500 Conduction Period 1000 ST730C..L Series TJ = 125C 500 0 0 400 800 1200 1600 2000 2400 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 94414 Revision: 11-Aug-08 ST730CLPbF Series 16000 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 990 A At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 15000 14000 13000 12000 11000 10000 9000 ST730C..L Series 8000 7000 1 10 100 18000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 16000 Of Conduc tion May Not Be Maintained. Initial TJ = 125C 15000 No Voltage Reapplied Rated VRRMReapplied 14000 17000 13000 12000 11000 10000 9000 8000 ST730C..L Series 7000 0.01 0.1 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Numb er Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 TJ = 25C TJ = 125C 1000 ST730C..L Series 100 0.5 1 1.5 2 2.5 3 3.5 Transient Thermal Impedance ZthJ-hs (K/ W) Instantaneous On-state Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics 0.1 Steady State Value R thJ-hs = 0.073 K/ W (Single Side Cooled) R thJ-hs = 0.031 K/ W (Double Side Cooled) 0.01 (DC Operation) ST730C..L Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94414 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST730CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 990 A Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) Rec ommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) Tj=-40 C 1 Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 (2) (1) (3) (4) VGD IGD 0.1 0.001 Frequenc y Limited by PG(AV) Device: ST730C..L Series 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 73 0 C 20 L 1 - PbF 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - L = PUK case TO-200AC (B-PUK) 7 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 8 - Critical dV/dt: None = 500 V/s (standard selection) L = 1000 V/s (special selection) 9 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95076 For technical questions, contact: ind-modules@vishay.com Document Number: 94414 Revision: 11-Aug-08 Outline Dimensions Vishay Semiconductors TO-200AC (B-PUK) DIMENSIONS in millimeters (inches) Creepage distance: 36.33 (1.430) minimum Strike distance: 17.43 (0.686) minimum 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. 2 places 27 (1.06) MAX. Pin receptacle AMP. 60598-1 0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. 20 5 58.5 (2.3) DIA. MAX. 4.7 (0.18) 36.5 (1.44) 2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95076 Revision: 01-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000