ST730C12L1LPBF - Vishay Presicion Group

Document Number: 94414 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 1

Phase Control Thyristors

(Hockey PUK Version), 990 A

ST730CLPbF Series

Vishay High Power Products

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AC (B-PUK)

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

ELECTRICAL SPECIFICATIONS

PRODUCT SUMMARY

IT(AV) 990 A

TO-200AC (B-PUK)

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

IT(AV)

990 A

Ths 55 °C

IT(RMS)

2000 A

Ths 25 °C

ITSM

50 Hz 17 800 A

60 Hz 18 700

I2t50 Hz 1591 kA2s

60 Hz 1452

VDRM/VRRM 800 to 2000 V

tqTypical 150 µs

TJ- 40 to 125 °C

VOLTAGE RATINGS

TYPE NUMBER VOLTAGE

CODE

VDRM/VRRM, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

VRSM, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

IDRM/IRRM MAXIMUM

AT TJ = TJ MAXIMUM

ST730C..L

08 800 900

12 1200 1300

14 1400 1500

16 1600 1700

18 1800 1900

20 2000 2100

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2Revision: 11-Aug-08

ST730CLPbF Series

Vishay High Power Products Phase Control Thyristors

(Hockey PUK Version), 990 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current

at heatsink temperature IT(AV)

180° conduction, half sine wave

double side (single side) cooled

990 (375) A

55 (85) °C

Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 2000

Maximum peak, one-cycle

non-repetitive surge current ITSM

t = 10 ms No voltage

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

17 800

t = 8.3 ms 18 700

t = 10 ms 100 % VRRM

reapplied

15 000

t = 8.3 ms 15 700

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

1591

kA2s

t = 8.3 ms 1452

t = 10 ms 100 % VRRM

reapplied

1125

t = 8.3 ms 1027

Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 15 910 kA2√s

Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.98 V

High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.12

Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.32 mΩ

High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.27

Maximum on-state voltage VTM Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.62 V

Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA

Typical latching current IL1000

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise

of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs

TJ = TJ maximum, anode voltage ≤ 80 % VDRM

1000 A/µs

Typical delay time td

Gate current 1 A, dIg/dt = 1 A/µs

Vd = 0.67 % VDRM, TJ = 25 °C 1.0

µs

Typical turn-off time tq

ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs,

VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 150

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of

off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs

Maximum peak reverse and

off-state leakage current

IRRM,

IDRM

TJ = TJ maximum, rated VDRM/VRRM applied 80 mA

Document Number: 94414 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 3

ST730CLPbF Series

Phase Control Thyristors

(Hockey PUK Version), 990 A Vishay High Power Products

Note

• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

VALUES UNITS

TYP. MAX.

Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10.0 W

Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

Maximum peak positive gate current IGM TJ = TJ maximum, tp ≤ 5 ms 3.0 A

Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp ≤ 5 ms 20 V

Maximum peak negative gate voltage - VGM 5.0

DC gate current required to trigger IGT

TJ = - 40 °C

Maximum required gate trigger/

current/voltage are the lowest

value which will trigger all units

12 V anode to cathode applied

200 -

mATJ = 25 °C 100 200

TJ = 125 °C 50 -

DC gate voltage required to trigger VGT

TJ = - 40 °C 2.5 -

TJ = 25 °C 1.8 3.0

TJ = 125 °C 1.1 -

DC gate current not to trigger IGD

TJ = TJ maximum

Maximum gate current/voltage

not to trigger is the maximum

value which will not trigger any

unit with rated VDRM anode to

cathode applied

10 mA

DC gate voltage not to trigger VGD 0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range TJ- 40 to 125 °C

Maximum storage temperature range TStg - 40 to 150

Maximum thermal resistance, junction to heatsink RthJ-hs

DC operation single side cooled 0.073

K/W

DC operation double side cooled 0.031

Maximum thermal resistance, case to heatsink RthC-hs

DC operation single side cooled 0.011

DC operation double side cooled 0.006

Mounting force, ± 10 % 14 700

(1500)

(kg)

Approximate weight 255 g

Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)

ΔRthJ-hs CONDUCTION

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.009 0.009 0.006 0.006

TJ = TJ maximum K/W

120° 0.011 0.011 0.010 0.011

90° 0.014 0.014 0.015 0.015

60° 0.020 0.020 0.021 0.021

30° 0.036 0.036 0.036 0.036

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4Revision: 11-Aug-08

ST730CLPbF Series

Vishay High Power Products Phase Control Thyristors

(Hockey PUK Version), 990 A

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

Fig. 5 - On-State Power Loss Characteristics

Fig. 6 - On-State Power Loss Characteristics

100

110

120

130

0 100200300400500600700

30° 60°

90°

120°

180°

Average On-state Current (A)

Conduction Angle

Maximum Allowable Heatsink Temperature (°C)

ST7 3 0 C . . L Se r i e s

(Single Side Cooled)

R (DC) = 0.073 K/ W

thJ-hs

100

110

120

130

020040060080010001200

30°

60°

90°

120°

180°

Average On-state Current (A)

Conduction Period

Maximum Allowable Heatsink Temperature (°C)

ST730C..L Series

(Single Side Cooled)

R (DC) = 0.073 K/ W

thJ-hs

100

110

120

130

0 200 400 600 800 1000 1200 1400

30° 60° 90° 120° 180°

Conduction Angle

Maximum Allowable Heatsink Temperature (°C)

ST7 3 0 C . . L Se r i e s

(Double Side Cooled)

R (DC) = 0.031 K/ W

thJ-hs

100

110

120

130

0 400 800 1200 1600 2000 2400

30°

60°

90°

120°180°

Avera g e On-st a te Curre nt (A)

Conduction Period

Maximum Allowable Heatsink Temperature (°C)

ST7 3 0 C . . L Se r i e s

(Double Side Cooled)

R (DC) = 0.031 K/ W

thJ-hs

500

1000

1500

2000

2500

0 200 400 600 800 1000 1200 1400

180°

120°

90°

60°

30° RM S Li m i t

Conduc tion Angle

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

ST730C..L Series

T = 125°C

500

1000

1500

2000

2500

3000

3500

0 400 800 1200 1600 2000 2400

180°

120°

90°

60°

30°

RM S Lim i t

Conduction Period

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

ST730C..L Se ries

T = 1 2 5 ° C

Document Number: 94414 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 5

ST730CLPbF Series

Phase Control Thyristors

(Hockey PUK Version), 990 A Vishay High Power Products

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 9 - On-State Voltage Drop Characteristics

Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

7000

8000

9000

10000

11000

12000

13000

14000

15000

16000

110100

Numb er Of Equal Amplitude Half Cycle Current Pulses (N)

Peak Ha lf Sine Wave On-st ate Current (A)

Initia l T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

ST7 3 0 C . . L Se r i e s

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

7000

8000

9000

10000

11000

12000

13000

14000

15000

16000

17000

18000

0.01 0.1 1

Pulse Train Duration (s)

Ve rsus Pulse Tra in Dura tio n. Contro l

Peak Half Sine Wave On-state Current (A)

Init ial T = 125°C

No Voltage Reapplied

Ra t e d V Re a p p l i e d

RRM

ST7 3 0 C . . L Se r i e s

Maximum Non Rep etitive Surge Current

Of Conduction May Not Be Maintained.

100

1000

10000

0.5 1 1.5 2 2.5 3 3.5

T = 2 5 ° C

Instantaneous On-state Current (A)

Instantaneous On-state Voltage (V)

T = 125°C

ST7 3 0 C . . L Se r i e s

0.001

0.01

0.1

0.001 0.01 0.1 1 10

Sq u a r e W a v e Pu l se D u r a t i o n ( s)

thJ-hs

Steady State Value

R = 0.073 K/ W

(Single Side Cooled)

R = 0.031 K/ W

(Double Side Cooled)

(DC Operation)

thJ-hs

ST7 3 0 C . . L Se r i e s

Transient Thermal Impedance Z (K/W)

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6Revision: 11-Aug-08

ST730CLPbF Series

Vishay High Power Products Phase Control Thyristors

(Hockey PUK Version), 990 A

Fig. 11 - Gate Characteristics

ORDERING INFORMATION TABLE

0.1

100

0.001 0.01 0.1 1 10 100

VGD

IGD

(b)

(a)

Tj = 2 5 ° C

Tj = 12 5 ° C

Tj = - 4 0 ° C

(2) (3)

Instantaneous Gate Current (A)

In st a n t a n e o u s G a t e V o lt a g e ( V )

a) Recommended load line for

b) Recommended load line for

<=30% rated di/ d t : 10V, 10ohms

Fre q u e n c y Li m it e d b y PG ( A V )

rated di/dt : 20V, 10ohms; tr<=1 µs

tr<=1 µs

(1)

(1) PGM = 10W, tp = 4ms

(2) PGM = 20W, tp = 2ms

(3) PGM = 40W, tp = 1ms

(4) PGM = 60W, tp = 0.66ms

Rectangular gate pulse

Device: ST730C..L Series

(4)

1- Thyristor

2- Essential part number

3- 0 = Converter grade

4- C = Ceramic PUK

5- Voltage code x 100 = VRRM (see Voltage Ratings table)

6- L = PUK case TO-200AC (B-PUK)

7- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

9- Lead (Pb)-free

8- Critical dV/dt: None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

Device code

51 324

6789

ST 73 0 C 20 L 1 - PbF

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95076

Document Number: 95076 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 01-Aug-07 1

TO-200AC (B-PUK)

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

Pin receptacle

AMP. 60598-1

0.7 (0.03) MIN. 34 (1.34) DIA. MAX.

2 places

53 (2.09) DIA. MAX.

58.5 (2.3) DIA. MAX.

2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep

4.7 (0.18)

27 (1.06) MAX.

0.7 (0.03) MIN.

6.2 (0.24) MIN.

36.5 (1.44)

Creepage distance: 36.33 (1.430) minimum

Strike distance: 17.43 (0.686) minimum

Quote between upper and lower pole pieces has to be considered after

application of mounting force (see thermal and mechanical specification)

20° ± 5°

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Revision: 12-Mar-12 1Document Number: 91000

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