HL6312G/13G
AlGaInP Laser Diodes
ADE-208-190G (Z)
8th Edition
Dec. 2000
Description
The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure.
Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser
levelers and various other types of optical equipment. Hermetic sealing of the package achieves high
reliability.
Features
• Visible light output: λp = 635 nm Typ (nearly equal to He-Ne Gas Laser)
• Optical output power: 5 mW CW
• Low Operating voltage: 2.7 V Max
• Single longitudinal mode
• Built-in photodiode for monitoring laser output
• TM mode oscillation
LDPD
13
Internal Circuit
• HL6312G Internal Circuit
• HL6313G
Package Type
• HL6312G/13G: G2
LDPD
13
22
HL6312G/13G
2
Absolute Maximum Ratings (TC = 25°C)
Item Symbol Rated Value Unit
Optical output power PO5mW
Pulse optical output power PO(pulse) 6 * mW
LD reverse voltage VR(LD) 2V
PD reverse voltage VR(PD) 30 V
Operating temperature Topr –10 to +50 °C
Storage temperature Tstg –40 to +85 °C
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Optical and Electrical Characteristics (TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Optical output power PO5 — — mW Kink free
Threshold current Ith 20 45 70 mA
Operating current IOP —5585mAP
O
= 5 mW
Operating voltage VOP — — 2.7 V PO = 5 mW
Beam divergence
parallel to the junction θ//5811deg. PO = 5 mW
Beam divergence
parpendicular to the junction θ⊥ 25 31 37 deg. PO = 5 mW
Astigmatism AS—8 —µmP
O
= 5 mW, NA = 0.55
Lasing wavelength λp 625 635 640 nm PO = 5 mW
Monitor current IS0.2 0.4 0.8 mA PO = 5 mW, VR(PD) = 5 V
HL6312G/13G
3
Typical Characteristic Curves
5
4
3
2
1
00 20 40 60 80 100
Forward current, IF (mA)
Optical output power, PO (mW)
Optical Output Power vs. Forward Current
TC = 0°C
50°C
25°C
0.5
0.4
0.3
0.2
0.1
0051342
Optical output power, PO (mW)
Monitor Current vs. Optical Output Power
Monitor current, IS (mA)
TC = 25°C
TC = 25°C
VR(PD) = 5 V
−40 −20 0 20 40
Angle, θ (deg.)
Relative intensity
Parallel
Perpendicular PO = 5 mW PO = 5 mW
PO = 3 mW
PO = 1 mW
Far Field Pattern
625 650630 645640
Wavelength, λp (nm)
Lasing Spectrum
Relative intensity
635
HL6312G/13G
4
Typical Characteristic Curves (cont)
100
0 1020304050
Case temperature, TC (°C)
Case temperature, TC (°C)
Case temperature, TC (°C)
Threshold current, Ith (mA)
Threshold Current vs. Case Temperature
10
0.5
0.4
0.3
0.2
0.1
010 20 30 40 50
Slope efficiency, ηs (mW/mA)
Slope Efficiency vs. Case Temperature
0
Case temperature, TC (°C)
05010 403020
1
0.8
0.6
0.4
0.2
0
Monitor Current vs. Case Temperature
Monitor current, IS (mA)
PO = 5 mW
VR(PD) = 5 V
638
636
634
632
630010 50403020
Lasing Wavelength vs. Case Temperature
Lasing wavelength, λp (nm)
640
642
644
646 PO = 5 mW
HL6312G/13G
5
Typical Characteristic Curves (cont)
20
15
10
5
001 32
Optical output power, PO (mW) Optical output power, PO (mW)
Astigmatism vs. Optical Output Power
Astigmatism, AS (µm)
TC = 25°C
NA = 0.55
45
500
400
300
200
100
0051342
Polarization Ratio vs. Optical Output Power
Polarization ratio
NA = 0.25
NA = 0.4
TC = 25°C
0 1200200 1000600400
Electrostatic Destruction (MIL method)
Applied voltage (V)
Survival rate
800
20
40
0
60
80
100 LD Forward
N = 10pcs
judgment :
∆IO ≥ 10%
LD Reverse
N = 10pcs
judgment : ∆IO ≥ 10%
(%)
0 1000 30002000
Electrostatic Destruction (MIL method)
Applied voltage (V)
Survival rate
4000
20
40
0
60
80
100
(%)
HL6312G/13G
6
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LD/G2
—
—
1.1 g
Unit: mm
123
1
2
3
9.0
+0
–0.025
φ1.0 ± 0.1
0.4
+0.1
–0
(0.65)
(90°)
φ
7.2
+0.3
–0.2
φ
φ6.2 ± 0.2
( 2.0)
φ
Emitting Point
2.45
1.5 ± 0.1
9 ± 1
3 – 0.45 ± 0.1
3.5 ± 0.2 0.3
Glass
φ2.54 ± 0.35
HL6312G/13G
7
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The
laser beam shall be observed or adjusted through infrared camera or equivalent.
HL6312G/13G
8
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