General Purpose Transistor
PNP Silicon
1.F R -5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Total Device Dissipation FR-5 Board (1)
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C
Derate above 25 C
Junction and Storage, Temperature
Characteristics
TJ,Tstg
R JA
PD
PD
Symbol Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Thermal Characteristics
1
2
3
BASE
COLLECTOR
EMITTER
SOT-23
BC807-16/
Maximum Ratings
Emitter-Base VOltage
Symbol Value Unit
Rating
IC
VCBO
VEBO
-50
-5.0
500 mAdc
V
V
V
( TA=25 C unless otherwise noted)
1
2
3
MARKING DIAGRAM
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WEITRON
q
R JA
q
BC807-25
BC807-40
-45
Collector-Base Voltage
Collector-Emitter Voltage VCEO
Collector Current-Continuous
Device Marking
BC807-17=5A, BC807-25=5B, BC807-40=5C
WEITRON
WE IT R ON
BC807-16/BC807-25
V
V
DC Current Gain
(IC= -100mA, VCE=-1.0V)
(IC= -500mA,VCE=-1.0V)
Collector-Emitter Saturation Voltage
(IC= -500mA, IB=50mA)
Base-Emitter On Voltage
(IC= -500mA, IB=-1.0V)
hFE
VCE(sat)
VBE(on)
On Characteristics
-
-
-
-
-
-
-
-
-
-0.7
-1.2
-
-
-
-
-
-
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= -10mA, VCE= -5.0VDC, f=100MHz)
Output Capacitance
(VCB= -10V, f=1.0MHz)
fT
Cobo
MHz
pF
100
- 10
- -
-
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Characteristics Symbol Min Max Unit
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Typ
BC807-40
BC807-16
BC807-25
BC807-40
100
160
250
40
250
400
600
Characteristics Symbol Min Max Unit
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Typ
Collector-Emitter Breakdown Voltage
(IC= -10mA)
Collector-Emitter Breakdown Voltage
(IC=-10 µA ,VEB=0)
Emitter-Base Breakdown Voltage
(IE=-1.0 µA)
Collector Cutoff Current (VCB=20V)
(VCB=20V, TA=150 C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO nA
mA
Off Characteristics
V
V
V
-45
-50
-5.0
-
-
-
-
-
-
-
-
-
-
100
5.0
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. On Voltages
100
10
1.0
V
R, REVERSE VOLTAGE (VOLTS)
Figure 4. T emperature Coefficients
+1.0
IC, COLLECTOR CURRENT
Figure 5. Capacitances
-0.1 -1.0-1.0 -10 -100 -1000
-2.0
-1.0
0
V
CE, COLLECTOR-EMITTER VOLTAGE (VOL
TS
)
V, VOLTAGE (VOLTS)
V, TEMPERA TURE COEFFICIENTS (mV/ C)
C, CAPACITANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.0 -10 -1000-100
-10 -100
TJ = 25 C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
TA = 25C
VBE(sat) @ I C/IB = 10
VBE(on)
@ V CE = -1.0 V
VCE(sat)
@ I C/IB = 10
VC for V
CE(sat)
VB for VBE
Cob
Cib
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
hFE , DC CURRENT GAIN
1000
10
-1000-0.1 -10 -100
100
-1.0
VCE = -1.0 V
TA = 25 C
""
q
q
q
WEITRON
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BC807-16/BC807-25
BC807-40
WEITRON
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Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
EG
M
L
H
J
TOP VIEW
K
C
S O T -23
SOT-23 Package Outline Dimension
BC807-16/BC807-25
BC807-40
