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FMBM5551 — NPN General-Purpose Amplifier
© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.1.0
November 2014
FMBM5551
NPN General-Purpose Amplifier
Features
• This device has matched dies
• Sourced from process 16
• See MMBT5551 for characteristics
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Figure 1. Device Package Figure 2. Internal Connection
Part Number Top Mark Package Packing Method
FMBM5551 3S2 SSOT 6L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 160 V
VCBO Collector-Base Voltage 180 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current (DC) 600 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
C1 E1 C2
B1 E2 B2
SuperSOTTM-6
Mark: .3S2
pin #1
Dot denotes pin #1
C2
E1
C1
B2
E2
B1
FMBM5551 — NPN General-Purpose Amplifier
© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.1.0 2
Thermal Characteristics(1), (2)
Values are at TA = 25°C unless otherwise noted.
Notes:
1. PD total, for both transistors. For each transistor, PD = 350 mW.
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
PDPower Dissipation (TC = 25°C) 0.7 W
Derate Above 25°C5.6mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 180 °C/W
Symbol Parameter Conditions Min. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage IC = 1 mA, IB = 0 160 V
BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 180 V
BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6 V
ICBO Collector Cut-Off Current VCB = 120 V, IE = 0 50 nA
VCB = 120 V, IE = 0, TA = 100°C 50 μA
IEBO Emitter Cut-Off Current VEB = 4 V, IC = 0 50 nA
hFE1 DC Current Gain VCE = 5 V, IC = 1 mA 80
DIVID1 Variation Ratio of hFE1
Between Die 1 and Die 2 hFE1(Die1) / hFE1(Die2) 0.9 1.1
hFE2 DC Current Gain VCE = 5 V, IC = 10 mA 80 250
DIVID2 Variation Ratio of hFE2
Between Die 1 and Die 2 hFE2(Die1) / hFE2(Die2) 0.95 1.05
hFE3 DC Current Gain VCE = 5 V, IC = 50 mA 30
DIVID3 Variation Ratio of hFE3
Between Die 1 and Die 2 hFE3(Die1) / hFE3(Die2) 0.9 1.1
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA 0.15 V
IC = 50 mA, IB = 5 mA 0.20
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA 1 V
IC = 50 mA, IB = 5 mA 1
VBE(on) Base-Emitter On Voltage VCE = 5 V, IC = 10 mA 1 V
DEL Differ en ce of VBE(on)
Between Die1 and Die 2 VBE(on)(Die1) - VBE(on)(Die2) -8 8 mV
Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 6 pF
Cib Input Capaci tance VEB = 0.5 V, IC = 0, f = 1 MHz 20 pF
fTCurrent Gain Bandwidth Product VCE = 10 V, IC = 10 mA,
f = 100 MHz 100 300 MHz
NF Noise Figure VCE = 5 V, IC = 200 μA,
f = 1 MHz, RS = 20 kΩ,
B = 200 Hz 8dB
hfe Small Signal Current Gain VCE = 10 V, IC = 1.0 mA,
f = 10 kHz 50 250
FMBM5551 — NPN General-Purpose Amplifier
© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 3. Typical Pulsed Current Gain
vs. Collector Current Figure 4. Collector-Emitter Saturation Voltage
vs. Collector Current
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current Figure 6. Base-Emitter On Voltage
vs. Collector Current
Figure 7. Collector Cut-Off Current
vs. Ambient Temperature Figure 8. Collector-Emitte r Bre ak down Voltage
with Resistance Between Emitter-Base
Ω
vs Collector Current
0 .1 0 .2 0 .5 1 2 5 10 20 50 1 00
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRE NT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
β
β
Ω
Voltage vs Collect or Current
110100200
0
0. 1
0. 2
0. 3
0. 4
0. 5
I - COLLECTOR CURRENT (mA)
V - COLLECTOR EMITTE R VOLTAGE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β= 10
β
Ω
β
Voltage vs Collect or Curre nt
110100200
0
0. 2
0. 4
0. 6
0. 8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
BESAT
β= 10
25 °C
- 40
°
C
125
°
C
Ω
β
β
Collector Current
0. 1 1 1 0 10 0 20 0
0
0. 2
0. 4
0. 6
0. 8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40 °C
125 °C
Ω
25 50 75 100 125
1
10
50
T - AMBIENT TEMP ERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
°
V = 100V
CB
β
β
Between Emitter-Base
0.1 1 10 100 1000
160
180
200
220
240
260
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
I = 1.0 mA
C
β
β
FMBM5551 — NPN General-Purpose Amplifier
© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.1.0 4
Typical Performance Characteristics (Continued)
Figure 9. Input and Output Capacitance
vs. Reverse Voltage Figure 10. Small Signal Current Gain
vs. Collector Current
0.1 1 10 100
0
5
10
15
20
25
30
V - COLLECTOR VOLTAGE (V)
CAPACITANCE (pF)
C
f = 1.0 MHz
CE
C
cb
ib
vs Collector Current
11050
0
4
8
12
16
I - COLLECTOR CURRENT (mA)
h - SMALL SIGNAL CURRENT GAIN
C
FE
FREG = 20 MHz
V = 10V
CE
FMBM5551 — NPN General-Purpose Amplifier
© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.1.0 5
Physical Dimensions
Figure 11. 6-LEAD, SUPERSOT6, JEDEC MO-193, 1.6 MM WIDE
®
®
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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