io MEDIUM POWER LINEAR SWITCHING APPLICATIONS e Collector current 10A * Collector dissipation Pc =75W (Te = 25 ) ABSOLUTE MAXIMUM RATINGS [Ta = 25 } ) TIP127A PNP Epitaxial Silicon Transistor Characteristic Symbol | Rating Unit Collector-Base Voltage Vopo -20 V TO-220 Coliector-Emitter Voltage Voeo -10 Vv Emitter-Base Voltage Vepo 7 Vv Collector Current Te -10 A Collector Dissipation Pe 75 WwW Junction Temperature Tj 150 c Storage Temperature Tstg -55 ~150 c 1. Base 2. Collector 3. Emitter ELECTRICAL CHARACTERISTICS {Ta = 25%) ) Characteristic Symbol Teat Condition Min | Typ | Max | Unit Collector-Base Breakdown Voltage BVcso Ic =-ImA, Ig = 0 -20 Vv Collector-EmitterBreakdown Voltage BV ceo Ic = -10mA, Ig =0 -10 Vv Emitter-Base Breakdown Voltage BVepo Ig = -lmA, Ic = 0 7 Vv Collector Cutoff Current lepo Vep= -15V,Ie=0 ~100 pA Emitter Cutoff Current lgpo Vep -3 V1c=0 -100 pA DC Current Gain rei Vee= -3V 1e=-6A 80 Tre Vog= -3ViIc= -10A 50 Collector-Emitter Saturation Voltage Vegisan Ie 6A, [p= -600mA 0.5 Vv Base-Emitter Saturation Voltage Vee (saT) Ic= -GA, Vog= $V -1.5 Vv 8-10 FC) ; SUR Pes Oa ae te eClEN CHUM ee Cie Semiconductor DC CURRENT GAIN COLLECTOR-BASE BREAKDOWN VOLTAGE -0.01 -0.009 5 E 5 ~0.008 = = -0.007 3 Ip =60mA _0.006 S 5 5 Ip=50mA g 79.005 3 Ip=40mA = ~0-004 8 [p=30mA 8 -0.003 = Ip=-20mA = -0.002 2 Ip =10mA <= -1 -0.001 oO 0 -1-2-3-4-5 +6 ~7 -8 -9 -10 9 -5-10-15-20-25~30-35-40-45~-50 V cE .COLLECTOR-EMITTER VOLTAGE V CBCOLLECTOR~BASE VOLTAGE COLLECTOR-EMITTER BREAKDOWN COLLECTOR-EMITTER SATURATION VOLTAGE VOLTAGE 0.16 -0.09 Z 0.08 -0,07 az o & & -0.08 3 5 -0.05 % 3 -0.04 5 & ~o.03 - < y 70.02 3 -0.01 2 0 0 -5~10~15-20-25-30-45-~40 -45 -50 6-01 -03 -05 -0.7-09 -1 VCE .COLLECTOR-EMITTER VOLTAGE Ver .COLLECTOR-EMITTER VOLTAGE 8-11