BTB12-800BW3G - ON Semiconductor

© Semiconductor Components Industries, LLC, 2008

February, 2008 - Rev. 1

1Publication Order Number:

BTB12-600BW3/D

BTB12-600BW3G,

BTB12-800BW3G

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full‐wave ac control applications

where high noise immunity and high commutating di/dt are required.

Features

•Blocking Voltage to 800 V

•On‐State Current Rating of 12 Amperes RMS at 25°C

•Uniform Gate Trigger Currents in Three Quadrants

•High Immunity to dV/dt - 2000 V/ms minimum at 125°C

•Minimizes Snubber Networks for Protection

•Industry Standard TO‐220AB Package

•High Commutating dI/dt - 4 A/ms minimum at 125°C

•These are Pb-Free Devices

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off-State Voltage (Note 1)

(TJ = -40 to 125°C, Sine Wave,

50 to 60 Hz, Gate Open)

BTB12-600BW3G

BTB12-800BW3G

VDRM,

VRRM

600

800

On‐State RMS Current

(Full Cycle Sine Wave, 60 Hz, TC = 80°C)

IT(RMS) 12 A

Peak Non‐Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

TC = 25°C)

ITSM 120 A

Circuit Fusing Consideration (t = 10 ms) I2t 78 A2sec

Non-Repetitive Surge Peak Off-State

Voltage (TJ = 25°C, t = 10ms)

VDSM/

VRSM

VDSM/VRSM

+100

Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A

Peak Gate Power

(Pulse Width ≤1.0 ms, TC = 80°C)

PGM 20 W

Average Gate Power (TJ = 125°C) PG(AV) 1.0 W

Operating Junction Temperature Range TJ-40 to +125 °C

Storage Temperature Range Tstg -40 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

TRIACS

12 AMPERES RMS

600 thru 800 VOLTS

TO-220AB

CASE 221A

STYLE 4

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BTB12-xBWG

AYWW

MARKING

DIAGRAM

x = 6 or 8

A = Assembly Location

Y = Year

WW = Work Week

G = Pb-Free Package

Device Package Shipping

ORDERING INFORMATION

BTB12-600BW3G TO-220AB

(Pb-Free)

50 Units / Rail

PIN ASSIGNMENT

3 Gate

Main Terminal 1

Main Terminal 2

4Main Terminal 2

MT1

MT2

BTB12-800BW3G TO-220AB

(Pb-Free)

50 Units / Rail

*For additional information on our Pb-Free strategy and

soldering details, please download the ON Semicon‐

ductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

BTB12-600BW3G, BTB12-800BW3G

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THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction-to-Case

Junction-to-Ambient

RqJC

RqJA

2.3

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds TL260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C

TJ = 125°C

IDRM/

IRRM -

0.005

1.0

ON CHARACTERISTICS

Peak On‐State Voltage (Note 2)

(ITM = ±17 A Peak)

VTM - - 1.55 V

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)

MT2(+), G(+)

MT2(+), G(-)

MT2(-), G(-)

IGT

2.5

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±100 mA)

IH- - 50 mA

Latching Current (VD = 24 V, IG = 60 mA)

MT2(+), G(+)

MT2(+), G(-)

MT2(-), G(-)

Gate Trigger Voltage (VD = 12 V, RL = 30 W)

MT2(+), G(+)

MT2(+), G(-)

MT2(-), G(-)

VGT

0.5

1.7

1.1

Gate Non-Trigger Voltage (TJ = 125°C)

MT2(+), G(+)

MT2(+), G(-)

MT2(-), G(-)

VGD

0.2

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current, See Figure 10.

(Gate Open, TJ = 125°C, No Snubber)

(dI/dt)c4.0 - - A/ms

Critical Rate of Rise of On-State Current

(TJ = 125°C, f = 120 Hz, IG = 2 x IGT

, tr ≤100 ns)

dI/dt - - 50 A/ms

Critical Rate of Rise of Off‐State Voltage

(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)

dV/dt 2000 - - V/ms

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

BTB12-600BW3G, BTB12-800BW3G

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+ Current

+ Voltage

VTM

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs

(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3

MainTerminal 2 - VTM

VTM Maximum On State Voltage

IHHolding Current

MT1

(+) IGT

GATE

(+) MT2

REF

MT1

(-) IGT

GATE

(+) MT2

REF

MT1

(+) IGT

GATE

(-) MT2

REF

MT1

(-) IGT

GATE

(-) MT2

REF

MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

Quadrant III Quadrant IV

Quadrant II Quadrant I

Quadrant Definitions for a Triac

IGT -+ IGT

All polarities are referenced to MT1.

With in-phase signals (using standard AC lines) quadrants I and III are used.

BTB12-600BW3G, BTB12-800BW3G

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Figure 1. Typical RMS Current Derating

IT(RMS), RMS ON‐STATE CURRENT (AMP)

125

110

121086420

TC, CASE TEMPERATURE ( C)°

Figure 2. On‐State Power Dissipation

IT(AV), AVERAGE ON‐STATE CURRENT (AMP)

121086420

P(AV), AVERAGE POWER DISSIPATION (WATTS)

120°, 90°, 60°, 30°

180°

60°

90°

120°

180°

30°

Figure 3. On‐State Characteristics

VT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)

100

IT, INSTANTANEOUS ON‐STATE CURRENT (AMP)

0.5 1 1.5 2 2.5 3 3.5 4

0.1

MAXIMUM @ TJ = 125°C

TYPICAL AT

TJ = 25°C

MAXIMUM @ TJ = 25°C

Figure 4. Thermal Response

t, TIME (ms)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.1

0.01 1·104

10001001010.1

Figure 5. Typical Hold Current Variation

TJ, JUNCTION TEMPERATURE (°C)

IH, HOLD CURRENT (mA)

-40 -25 -10 5 20 35 50 65 80 95 110 125

MTI2 Positive

MTI2 Negative

BTB12-600BW3G, BTB12-800BW3G

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100

-40 -25 -10 5 20 35 50 65 80 95 110 125

Figure 6. Typical Gate Trigger Current Variation

TJ, JUNCTION TEMPERATURE (°C)

VD = 12 V

RL = 30 W

IGT

, GATE TRIGGER VOLTAGE (mA)

0.4

0.6

0.8

1.2

1.4

1.6

1.8

-40 -25 -10 5 20 35 50 65 80 95 110 125

TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Gate Trigger Voltage Variation

VGT

, GATE TRIGGER VOLTAGE (V)

VD = 12 V

RL = 30 W

Figure 8. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

LL1N4007

200 V

MEASURE

CHARGE

CONTROL

CHARGE TRIGGER

NON‐POLAR

51 W

MT2

MT1

1N914

TRIGGER CONTROL

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 9. Critical Rate of Rise of Off‐State Voltage

(Exponential Waveform)

RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)

5000

0100010010

dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/ s)μ

VD = 800 Vpk

TJ = 125°C

BTB12-600BW3G, BTB12-800BW3G

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PACKAGE DIMENSIONS

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

TO-220

CASE 221A-07

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.022 0.36 0.55

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

-T- SEATING

PLANE

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BTB12-600BW3/D

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