2SD667AC - Renesas Technology / Hitachi Semiconductor

Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

names are mentioned in the document, these names have in fact all been changed to Renesas

Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and

corporate statement, no changes whatsoever have been made to the contents of the document, and

these changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

To all our customers

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with

semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

(iii) prevention against any malfunction or mishap.

Notes regar ding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas

Technology Corporation product best suited to the customer's application; they do not convey any

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circuit application examples contained in these materials.

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subject to change by Renesas Technology Corporation without notice due to product improvements or

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2SD1471

Silicon NPN Planar, Darlington

ADE-208-1154 (Z)

1st. Edition

Mar. 2001

Application

High gain amplifier

Outline

UPAK

1. Base

2. Collector

3. Emitter

4. Collector (Flange)

2SD1471

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage VCBO 40 V

Collector to emitter voltage VCEO 30 V

Emitter to base voltage VEBO 10 V

Collector current IC300 mA

Collector peak current iC(peak)*1500 mA

Collector power dissipation PC*21W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. Pulse ≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

voltage V(BR)CBO 40 — — V IC = 10 µA, IE = 0

Collector to emitter breakdown

voltage V(BR)CEO 30 — — V IC = 1 mA, RBE = ∞

Emitter to base breakdown

voltage V(BR)EBO 10 — — V IE = 10 µA, IC = 0

Collector cutoff current ICBO ——1 µAV

CB = 30 V, IE = 0

ICEO ——10µAV

CE = 24 V, RBE = ∞

DC current transfer ratio hFE1*12000 — 100000 VCE = 5 V, IC = 10 mA*2

hFE2*13000 — — VCE = 5 V, IC = 100 mA*2

hFE3*13000 — — VCE = 5 V, IC = 400 mA*2

Collector to emitter saturation

voltage VCE(sat) — — 1.5 V IC = 100 mA, IB = 0.1 mA*2

Base to emitter saturation

voltage VBE(sat) — — 2.0 V IC = 100 mA, IB = 0.1 mA*2

Notes: 1. The 2SD1471 is grouped by hFE as follows.

2. Pulse test

Mark DT ET

hFE1 2000 to 100000 5000 to 100000

hFE2 3000 min 10000 min

hFE3 3000 min 10000 min

2SD1471

0.4

0.8

1.2

Ambient Temperature Ta (°C)

Collector Power Dissipation PC (W)

(on the alumina ceramic board)

Maximum Collector Dissipation Curve

100 150 3

0.01

0.003

0.001

0.1

0.03

1.0

0.3

10 30

Collector to Emitter Voltage VCE (V)

Collector Current IC (A)

Area of Safe Operation

100 300

Ta = 25°C

1 Shot Pulse

iC(peak) 1 µs

1 ms

PW = 10 ms

0.2

0.1

0.3

0.5

0.4

246

Collector to Emitter Voltage VCE (V)

Collector Current IC (A)

Typical Output Characteristics

810

Ta = 25°C

2 µ

IB = 0 A

= 1 W

10 30

300

100

3010 100 300

Collector Current IC (mA)

DC Current Transfer Ratio hFE (×103)

DC Current Transfer Ratio vs.

Collector Current

1,000

Ta = 75°C

–25

VCE = 3 V

Pulse

2SD1471

1.0

0.3

0.1

3010 100 300

Collector Current IC (mA)

Collector to Emitter Saturation Voltage VCE(sat) (V)

Base to Emitter Saturation Voltage VBE(sat) (V)

Saturation Voltage vs.

Collector Current

1,000

Ta = 25°C

IC/IB = 1,000

VBE(sat)

VCE(sat)

1.0

0.3

1 m

300

100

10 m Time t (s)

Thermal Resistance θj-a (°C/W)

Transient Thermal Resistance

100 m 1 10 100 1,000

Ta = 25°C

On The Alumina Ceramic Board (12.5×30×0.7 mm)

2SD1471

Package Dimensions

4.5 ± 0.1

1.8 Max 1.5 ± 0.1

0.44 Max

0.48 Max

0.53 Max

1.5 1.5

3.0

2.5 ± 0.1

4.25 Max

0.8 Min

φ1

0.4

(1.5)

(2.5)

(0.4)

(0.2)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

UPAK

—

Conforms

0.050 g

As of January, 2001

Unit: mm

2SD1471

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Hitachi Asia Ltd.

Hitachi Tower

16 Collyer Quay #20-00,

Singapore 049318

Tel : <65>-538-6533/538-8577

Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

URL NorthAmerica : http://semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg

Asia : http://sicapac.hitachi-asia.com

Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road,

Hung-Kuo Building,

Taipei (105), Taiwan

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

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Group III (Electronic Components)

7/F., North Tower,

World Finance Centre,

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon,

Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://www.hitachi.com.hk

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Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 585160

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straβe 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

For further information write to:

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