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The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
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Remember to give due consideration to safety when making your circuit designs, with appropriate
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Notes regar ding these materials
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2SD1471
Silicon NPN Planar, Darlington
ADE-208-1154 (Z)
1st. Edition
Mar. 2001
Application
High gain amplifier
Outline
UPAK
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
4
1
2
3
1
2
3
2SD1471
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 40 V
Collector to emitter voltage VCEO 30 V
Emitter to base voltage VEBO 10 V
Collector current IC300 mA
Collector peak current iC(peak)*1500 mA
Collector power dissipation PC*21W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Pulse 10 ms, Duty cycle 20%
2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO 40 V IC = 10 µA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO 30 V IC = 1 mA, RBE =
Emitter to base breakdown
voltage V(BR)EBO 10 V IE = 10 µA, IC = 0
Collector cutoff current ICBO ——1 µAV
CB = 30 V, IE = 0
ICEO ——10µAV
CE = 24 V, RBE =
DC current transfer ratio hFE1*12000 100000 VCE = 5 V, IC = 10 mA*2
hFE2*13000 VCE = 5 V, IC = 100 mA*2
hFE3*13000 VCE = 5 V, IC = 400 mA*2
Collector to emitter saturation
voltage VCE(sat) 1.5 V IC = 100 mA, IB = 0.1 mA*2
Base to emitter saturation
voltage VBE(sat) 2.0 V IC = 100 mA, IB = 0.1 mA*2
Notes: 1. The 2SD1471 is grouped by hFE as follows.
2. Pulse test
Mark DT ET
hFE1 2000 to 100000 5000 to 100000
hFE2 3000 min 10000 min
hFE3 3000 min 10000 min
2SD1471
3
0
0.4
0.8
1.2
50
Ambient Temperature Ta (°C)
Collector Power Dissipation PC (W)
(on the alumina ceramic board)
Maximum Collector Dissipation Curve
100 150 3
0.01
0.003
0.001
0.1
0.03
1.0
0.3
10 30
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Area of Safe Operation
100 300
Ta = 25°C
1 Shot Pulse
iC(peak) 1 µs
1 ms
PW = 10 ms
0.2
0.1
0
0.3
0.5
0.4
246
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Typical Output Characteristics
810
Ta = 25°C
20
18
16
14
6
4
2 µ
IB = 0 A
P
C
= 1 W
8
12
10 30
10
3
300
100
3010 100 300
Collector Current IC (mA)
DC Current Transfer Ratio hFE (×103)
DC Current Transfer Ratio vs.
Collector Current
1,000
Ta = 75°C
25
–25
VCE = 3 V
Pulse
2SD1471
4
1.0
0.3
0.1
10
3
3010 100 300
Collector Current IC (mA)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Base to Emitter Saturation Voltage VBE(sat) (V)
Saturation Voltage vs.
Collector Current
1,000
Ta = 25°C
IC/IB = 1,000
VBE(sat)
VCE(sat)
3
1.0
0.3
1 m
10
300
30
100
10 m Time t (s)
Thermal Resistance θj-a (°C/W)
Transient Thermal Resistance
100 m 1 10 100 1,000
Ta = 25°C
On The Alumina Ceramic Board (12.5×30×0.7 mm)
2SD1471
5
Package Dimensions
4.5 ± 0.1
1.8 Max 1.5 ± 0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5 ± 0.1
4.25 Max
0.8 Min
φ1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
UPAK
Conforms
0.050 g
As of January, 2001
Unit: mm
2SD1471
6
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
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consequential damage due to operation of the Hitachi product.
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6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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Colophon 2.0