NSVBCP69T1G - ON SEMICONDUCTOR

November, 2011 − Rev. 11

1Publication Order Number:

BCP69T1/D

BCP69T1G, NSVBCP69T1G

PNP Silicon

Epitaxial Transistor

This PNP Silicon Epitaxial Transistor is designed for use in low

voltage, high current applications. The device is housed in the

SOT−223 package, which is designed for medium power surface

mount applications.

Features

•High Current: IC = −1.0 A

•The SOT−223 Package Can Be Soldered Using Wave or Reflow.

•SOT−223 package ensures level mounting, resulting in improved

thermal conduction, and allows visual inspection of soldered joints.

The formed leads absorb thermal stress during soldering, eliminating

the possibility of damage to the die.

•NPN Complement is BCP68

•AEC−Q101 Qualified and PPAP Capable

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO −20 Vdc

Collector−Base Voltage VCBO −25 Vdc

Emitter−Base Voltage VEBO −5.0 Vdc

Collector Current IC−1.0 Adc

Total Power Dissipation @ TA = 25°C (Note 1)

Derate above 25°C

PD1.5

mW/°C

Operating and Storage Temperature Range TJ, Tstg −65 to

150

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance − Junction−to−Ambient

(Surface Mounted)

RqJA 83.3 °C/W

Lead Temperature for Soldering,

0.0625 in from case

Time in Solder Bath

TL260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.

x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

MEDIUM POWER

PNP SILICON

HIGH CURRENT

TRANSISTOR

SURFACE MOUNT

COLLECTOR 2,4

BASE

EMITTER 3

http://onsemi.com

SOT−223 (TO−261)

CASE 318E

STYLE 1

AYW

CEG

Device Package Shipping†

ORDERING INFORMATION

BCP69T1G SOT−223

(Pb−Free)

1000 / Tape & Reel

CE = Specific Device Code

A = Assembly Location

Y = Year

W = Work Week

G= Pb−Free Package

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MARKING

DIAGRAM

(*Note: Microdot may be in either location)

NSVBCP69T1G SOT−223

(Pb−Free)

1000 / Tape & Reel

BCP69T1G, NSVBCP69T1G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CES −25 − − Vdc

Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −20 − − Vdc

Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc

Collector−Base Cutoff Current (VCB = −25 Vdc, IE = 0) ICBO − − −10 mAdc

Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IC = 0) IEBO − − −10 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −5.0 mAdc, VCE = −10 Vdc)

(IC = −500 mAdc, VCE = −1.0 Vdc)

(IC = −1.0 Adc, VCE = −1.0 Vdc)

hFE 50

−

375

−

Collector−Emitter Saturation Voltage (IC = −1.0 Adc, IB = −100 mAdc) VCE(sat) − − −0.5 Vdc

Base−Emitter On Voltage (IC = −1.0 Adc, VCE = −1.0 Vdc) VBE(on) − − −1.0 Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −5.0 Vdc)

fT−60 −MHz

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

f , CURRENT GAIN BANDWIDTH PRODUCT (MHz)

Figure 2. Current Gain Bandwidth Product

300

200

100

-10 -100 -1000

VCE = -10 V

TJ = 25°C

f = 30 MHz

IC, COLLECTOR CURRENT (A)

1010.10.010.001

100

200

300

400

hFE, DC CURRENT GAIN

VCE = 1 V

150°C

25°C

−55°C

BCP69T1G, NSVBCP69T1G

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 3. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A)

10.10.010.001

0.05

0.15

0.25

0.35

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

IC/IB = 10

150°C

25°C

−55°C

0.10

0.20

0.30

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A)

1010.10.010.001

0.2

0.6

1.0

1.4

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

IC/IB = 10

150°C

25°C

−55°C

0.4

0.8

1.2

Figure 5. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

1010.10.010.001

0.2

0.3

0.5

0.9

1.2

VBE(on), BASE−EMITTER VOLTAGE (V)

VCE = 1 V

150°C

25°C

−55°C

0.4

0.8

1.0

0.6

0.7

1.1

160

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitances

C, CAPACITANCE (pF)

120

Cob

Cib

-5.0

-1.0

-2.0

-4.0

-2.5

-5.0

Cib

Cob

TJ = 25°C

-1.0

-2.0

-1.5

-3.0 VCE, COLLECTOR-EMITTER VOLTAGE (V)

Figure 7. Safe Operating Area

0.01

1.0

0.1

1.0 1000.1 10

10 ms

Single Pulse Test

@ TA = 25°C

Thermal Limit

100 ms

IC, COLLECTOR CURRENT (A)

1 ms

1 s

SOT−223 (TO−261)

CASE 318E−04

ISSUE R

DATE 02 OCT 2018

SCALE 1:1

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

98ASB42680B

DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 2

SOT−223 (TO−261)

CASE 318E−04

ISSUE R

DATE 02 OCT 2018

STYLE 4:

PIN 1. SOURCE

2. DRAIN

3. GATE

4. DRAIN

STYLE 6:

PIN 1. RETURN

2. INPUT

3. OUTPUT

4. INPUT

STYLE 8:

CANCELLED

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

STYLE 10:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

STYLE 7:

PIN 1. ANODE 1

2. CATHODE

3. ANODE 2

4. CATHODE

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

STYLE 2:

PIN 1. ANODE

2. CATHODE

3. NC

4. CATHODE

STYLE 9:

PIN 1. INPUT

2. GROUND

3. LOGIC

4. GROUND

STYLE 5:

PIN 1. DRAIN

2. GATE

3. SOURCE

4. GATE

STYLE 11:

PIN 1. MT 1

2. MT 2

3. GATE

4. MT 2

STYLE 12:

PIN 1. INPUT

2. OUTPUT

3. NC

4. OUTPUT

STYLE 13:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

A = Assembly Location

Y = Year

W = Work Week

XXXXX = Specific Device Code

G= Pb−Free Package

GENERIC

MARKING DIAGRAM*

AYW

XXXXXG

(Note: Microdot may be in either location)

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

98ASB42680B

DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 2 OF 2

SOT−223 (TO−261)

www.onsemi.com

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