118
GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Plastic Package — 880 nm VTE1291-1H, 1291-2H
PA CKAGE DIMENSIONS inch (mm)
CASE 26 T-1¾ (5 mm)
CHIP SIZE: .015" x .015"
DESCRIPTION
This narrow beam angle 5 m m plastic packaged emitter contains a double wirebonded, GaAlAs , 880 nm IRED chip. This cost eff ective
de si gn is wel l s ui t ed f or dc or high cu rrent pu l se applic ations . This device is a UL recognized compone nt for smoke al arm appl i cations
(UL fil e #S350 6) .
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating: -40°C to 100°C
Continuous P ower Dissipation: 200 m W
Derate above 30°C: 2.86 mW/°C
Maximum Continuou s Current: 100 mA
Derate above 30°C: 1.43 mA/°C
P eak Forw ard Current, 10 µs, 100 pps: 2.5 A
Temp . Coefficient of Pow er Output (Typ.): -.8% /°C
Maximum Reverse Vol tage: 5.0V
Maximum Re verse Current @ V
R
= 5V: 10 µA
Peak Wavelength (Typical): 880 nm
Junction Capaci tance @ 0V, 1 MHz (Typ.): 23 pF
Response Time @ I
F
= 20 mA
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature: 260°C
(1.6 mm from case, 5 seconds max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Refer to G eneral Produ ct Notes, pa ge 2.
P art Num ber
Output Forward Drop Half Power Beam
Angle
Irradiance Radiant
Intensity Total Power Test
Current VF
EeCondition IePOIFT @ IFT θ1/2
mW/cm2distance Diameter mW/sr mW mA
(Pulsed) Volts Typ.
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE1291-1H 2.5 3.3 36 6.4 32 20 100 1.5 2.0 ±12°
VTE1291-2H 5.0 6.5 36 6.4 65 25 100 1.5 2.0 ±12°
Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com
RoHS Compliant
