BC857T
Jul-02-20011
PNP Silicon AF Transistor
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC847...T
VPS05996
1
2
3
Type Marking Pin Configuration Package
BC857AT
BC857BT 3Es
3Fs 1 = B
1 = B 2 = E
2 = E 3 = C
3 = C SC75
SC75
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 45 V
Collector-base voltage VCBO 50
Collector-emitter voltage VCES 50
Emitter-base voltage VEBO 5
DC collector current IC100 mA
Peak collector current ICM 200
Total power dissipation, TS = 109 °C Ptot 250 mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
165 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BC857T
Jul-02-20012
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 V(BR)CEO 45 - - V
Collector-base breakdown voltage
IC = 10 µA, IB = 0 V(BR)CBO 50 - -
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0 V(BR)CES 50 - -
Emitter-base breakdown voltage
IE = 1 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 30 V, IE = 0 ICBO - - 15 nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C ICBO - - 5 µA
DC current gain
IC = 10 µA, VCE = 5 V
BC857AT
BC857BT
hFE
-
-
140
250
-
-
-
DC current gain
IC = 2 mA, VCE = 5 V
BC857AT
BC857BT
hFE
125
220
180
290
250
475
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
-
-
75
250
300
650
mV
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
-
700
850
-
-
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
600
-
650
-
750
820
1) Pulse test: t < 300
s; D < 2%
BC857T
Jul-02-20013
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz fT- 250 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 2.5 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - 11 -
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC857AT
BC857BT
h11e
-
-
2.7
4.5
-
-
k
Open-circuit reverse voltage transf.ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC857AT
BC857BT
h12e
-
-
1.5
2
-
-
10-4
Short-circuit forward current transf.ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC857AT
BC857BT
h21e
-
-
200
330
-
-
-
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
BC857AT
BC857BT
h22e
-
-
18
30
-
-
S
BC857T
Jul-02-20014
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
Ptotmax
/ P
totDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BC857T
Jul-02-20015
Transition frequency fT = f (IC)
VCE = 5V
10 10 10 10
EHP00378
f
mA
MHz
-1 0 1 2
5
T
3
10
10
2
1
10
5
5
5
C
Ι
Collector-base capacitance Ccb = f (VCB)
Emitter-base capacitance Ceb = f (VEB)
10 -1 10 0 10 1
V
VCB,VEB
0
2
4
6
8
10
pF
14
Ccb, Ceb
Ccb
Ceb
Collector cutoff current ICBO = f (TA)
VCB = 30V
10 0 50 100 150
EHP00381
TA
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
C
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
10 0
EHP00380
VCEsat
10
mA
10
10
2
1
0
-1
5
5
V
0.3 0.5
100
25
-50
0.1 0.2 0.4
C
Ι
C
C
C
BC857T
Jul-02-20016
DC current gain hFE = f (IC)
VCE = 5V
10 10 10 10
EHP00382
h
mA
-2 -1 12
FE
3
10
10
2
0
10
5
5
10
1
0
10
5
555
100
25
-50
C
Ι
C
C
C
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 20
0
10
EHP00379
BEsat
V
0.6 V 1.2
-1
10
0
10
1
2
10
5
5
Ι
C
mA
0.2 0.4 0.8
C
25
C
100
C
-50
C
