MOTOROLA SC (DIODES/OPTO) 6S8E D MM 6367255 0087391 49T MNOT? MOTOROLA Order this data sheet by BAS116LT1/D SEMICONDUCTOR TECHNICAL DATA Advance Information Switching Diode This switching diode has the following features: e Low Leakage Current Applications Medium Speed Switching Times e Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel Use BAS116LTS to order the 13 inch/10,000 unit reel BAS116LT1 Motorola Preferred Device CASE 318-07, STYLE 8 3 Ofqo 1 SOT-23 (TO-236AB) CATHODE ANODE MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vde Peak Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mA DEVICE MARKING | BASII6LT1 = JV THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (1) Pp 225 mw Ta = 25C Derate above 25C 1.8 mW/C Thermal Resistance Junction to Ambient ReJA 556 C/W Total Device Dissipation Pp 300 mw Alumina Substrate (2) Ta = 25C Derate above 25C 2.4 mW Thermal Resistance Junction to Ambient ReJA 417 C/W Junction and Storage Temperature Ty. Tstg 55 to +150 C ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IpR = 100 pA) V(BR) 76 Vv Reverse Voltage Leakage Current (Vp = 75 V) IR _ 5.0 nA (VR = 75 V, Ty = 150C) _ 80 Forward Voltage (IF = 1.0 mA) VF _ 900 mV (le = 10 mA) _ 1000 (IF = 50 mA) _ 4100 (if = 150 mA) _ 1250 Diode Capacitance (Vp = 0 V, f = 1.0 MHz) Cp _ 2.0 pF Reverse Recovery Time (Ip = IR = 10 mA) (Figure 1) ter _ 3.0 us (1) FR-S =10x075x 0.062 in (2) Alumina = 0 4x03x 0024 in 99 5% alumina This document contains information on a new product Specifications and information herein are subject to change without notice Preferred devices are Motorola recommended choices for future use and best overall value. 2/94 MOTOROLA Motorola, Inc. 1994 MOTOROLA SC (DIODES/OPTO) 6b8E D MB 6367255 0087392 Jeb MBNOT? 820 Q W ih +10V 2k 0.1 pF 4 ; ; Ip 100 pH i L r 0.1 uF rd 10% < ty >| t> } IF | > | | | L DUT _| 50 Q OUTPUT ~~ 50 Q INPUT 90% PULSE SAMPLING iR(REC) = 1 mA GENERATOR OSCILLOSCOPE | Vp IR- OUTPUT PULSE L i INPUT SIGNAL (IF = IR = 10 mA; measured = = at iR(REC) = 1 mA) Notes: 1. A 2.0 kQ variable resistor adjusted for a Forward Current (IF) of 10 mA. 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. 3. to ter Figure 1. Recovery Time Equivalent Test Circuit OUTLINE DIMENSIONS NOTES 1. DIMENSIONING AND TOLERANCING PER ANSI 145M, 1982. 2. CONTROLLING DIMENSION: INCH 3, MAXIMUM LEAD THICKNESS INCLUDES 0.037 LEAD FINISH THICKNESS. THICKNESS Is THE MINIMUM THICKNESS 0.097 095 OF BASE MATERIAL. 0.95" }<_ A, -+ | | fj | Ss STYLE 8 H tt 2 NO CONNECTION LY it} 3 CATHODE 0.035 [ 09 | | V> ._> { 0.031 Inches fag (om) t (4) aA KS SOT-23 Footprint pk 0.079 | CASE 318-07 SOT-23 (TO-236AB) Motorola reserves the right to make changes without further notice to any products herein. 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ASIA-PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. = (S) MOTOROLA = BAS116LT1/D 0 cee eee ee ee ee eee CART AAYE A