1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
BLL6H0514L-130;
BLL6H0514LS-130
LDMOS driver transistor
Rev. 2 — 13 September 2010 Product data sheet
Table 1. Application information
Typical RF performance at Tcase =25
C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation f tpVDS PLGpRLin DPdroop(pulse) trtf
(MHz) (s) (%) (V) (W) (dB) (dB) (%) (dB) (ns) (ns)
pulsed RF 960 to 1215 128 10 50 130 19 10 54 0 15 8
1200 to 1400 300 10 50 130 17 10 50 0 15 8
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Product data sheet Rev. 2 — 13 September 2010 2 of 13
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLL6H0514L-130 (SOT1135A)
1drain
2gate
3source [1]
BLL6H0514LS-1 30 (SOT1135B)
1drain
2gate
3source [1]
1
2
3
sym112
1
3
2
2
3
1
sym112
1
3
2
Tabl e 3. Ordering i nformation
Type number Package
Name Description Version
BLL6H0514L-130 - flanged ceramic package; 2 mounting holes; 2 leads SOT1135A
BLL6H0514LS-130 - earless flanged ceramic package; 2 leads SOT1135B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 100 V
VGS gate-source voltage 0.5 +13 V
IDdrain current - 18 A
Tstg storage temperature 65 +150 C
Tjjunction temperature - 200 C
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Product data sheet Rev. 2 — 13 September 2010 3 of 13
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
5. Thermal characteristics
6. Characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Zth(j-c) transient thermal impedance from
junction to case Tcase =85C; PL= 130 W
tp = 100 s; = 10 % 0.17 K/W
tp = 200 s; = 10 % 0.22 K/W
tp = 300 s; = 10 % 0.25 K/W
tp = 100 s; = 20 % 0.23 K/W
tp = 1 ms; = 10 % 0.36 K/W
Table 6. DC characteristics
Tj = 25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 630 mA 100 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 135 mA 1.3 1.8 2.25 V
IDSS drain leakage current VGS =0V; V
DS =50V - - 1.4 A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 15.8 18 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 140 nA
gfs forward transconductance VDS =10V; I
D= 135 mA 806 - 1578 mS
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 6.25 V;
ID= 135 mA -200275m
Table 7. RF characteristics
Mode of operation: pulsed RF; tp = 300
s;
= 10 %; RF performance at VDS =50V; I
Dq =50mA;
f = 1 .2 GHz to 1.4 GHz; Tcase =25
C; unless otherwise specified, in a class-AB production
test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PLoutput power 130 - - W
VDS drain-source voltage PL=130W--50V
Gppower gain PL=130W 1517- dB
RLin input return loss PL=130W 7 10 - dB
Ddrain efficiency PL=130W 4550- %
Pdroop(pulse) pulse droop power PL=130W - 0 0.3 dB
trrise time PL= 130 W - 20 50 ns
tffall time PL=130W - 6 50 ns
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Product data sheet Rev. 2 — 13 September 2010 4 of 13
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
6.1 Ruggedness in class-AB operation
The BLL6H0514L-130 and BLL6H0514LS-130 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: VDS =50V; I
Dq =50mA; P
L= 130 W; f = 1.2 GHz to 1.4 GHz; tp= 300 s;
=10%.
7. Application information
7.1 Impedance information
Table 8. Typical impedan ce
f ZSZL
MHz
1200 1.21 j3.44 2.40 j0.63
1300 1.56 j4.49 2.30 j0.87
1400 2.21 j4.86 2.00 j1.71
Fig 1. Defin itio n of tran si s t or impe da nc e
001aaf059
drain
ZL
ZS
gate
BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 13 September 2010 5 of 13
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
7.2 Performance curves
VDS =50V; I
Dq =50mA; t
p = 300 s; = 10 %. VDS =50V; I
Dq =50mA; t
p = 300 s; = 10 %.
Fig 2. Power gain and drain efficiency as function of
frequency; typical values Fig 3. Input return loss as a function of frequency;
typical values
001aam262
f (GHz)
1.15 1.451.351.25
8
12
4
16
20
Gp
(dB) ηD
(%)
0
30
40
20
50
60
10
Gp
ηD
001aam263
f (GHz)
1.15 1.451.351.25
8
12
4
16
20
RLin
(dB)
0
VDS =50V; I
Dq =50mA; t
p = 300 s; = 10 %.
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
VDS =50V; I
Dq =50mA; t
p = 300 s; = 10 %.
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
Fig 4. Power gain as a function of load po wer; typical
values Fig 5. Drain efficiency as function of load power;
typical values
PL (W)
0 16012040 80
001aam264
8
12
4
16
20
Gp
(dB)
0
(1)
(2)
(3)
PL (W)
0 16012040 80
001aam265
30
40
20
50
60
ηD
(%)
10
(1)
(2)
(3)
BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 13 September 2010 6 of 13
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
8. Test information
VDS =50V; I
Dq =50mA; t
p = 300 s; = 10 %.
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
Fig 6. Load power as a function of input powe r; typical values
Pi (W)
04312
001aam266
80
40
120
160
PL
(W)
0
(1)
(2)
(3)
Printed-Circuit Board (PCB) material: Duroid 6006 with r= 6.15 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 7. Component layout
001aam267
C12
C7
R1
C5
C3
C2
C1
C6
C4
C11
C10
C13
R2 C9
C8
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Product data sheet Rev. 2 — 13 September 2010 7 of 13
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
[1] American Technical Ceramics type 700A or capacitor of same quality.
[2] American Technical Ceramics type 100A or capacitor of same quality.
[3] American Technical Ceramics type 100B or capacitor of same quality.
Table 9. List of components
See Figure 7 for component layout.
Component Description Value Remarks
C1 multilayer ceramic chip capacitor 10 F; 50 V
C2, C11 multilayer ceramic chip capacitor 1 nF [1]
C3, C4, C6, C9, C10 multilayer ceramic chip capacitor 100 pF [2]
C5, C7, C8 multilayer ceramic chip capacitor 43 pF [2]
C12 electrolytic capacitor 220 F; 63 V
C13 multilayer ceramic chip capacitor 1 nF [3] fitted vertically in
series with R2
R1 SMD resistor 10 SMD 0603
R2 wirewound lead resistor 2.61 ; 0.25 W fitted in series
with C13
BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 13 September 2010 8 of 13
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
9. Package outline
Fig 8. Package outline SOT1135A
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT1135A
sot1135a_po
09-10-12
09-12-14
Unit(1)
mm max
nom
min
4.65
3.76
5.26
5.00
9.65
9.40
9.65
9.40
9.65
9.40
9.65
9.40
19.94
18.92
3.30
2.92 15.24 0.51
A
Dimensions
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Flanged ceramic package; 2 mounting holes; 2 leads SOT1135A
bc
0.18
0.10
DD
1EE
1F
1.14
0.89
HpQ
1.70
1.45
qU
1
20.45
20.19
U2
9.91
9.65
w1
0.25
w2
inches max
nom
min
0.183
0.148
0.207
0.197
0.38
0.37
0.38
0.37
0.38
0.37
0.38
0.37
0.785
0.745
0.130
0.115 0.6 0.02
0.007
0.004
0.045
0.035
0.067
0.057
0.805
0.795
0.39
0.38 0.01
A
D
F
D1
c
E
E1
Q
B
C
A
q
U1
U2
b
2
1
3
Hp
AB
w1
Cw2
0 5 10 mm
scale
BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 13 September 2010 9 of 13
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
Fig 9. Package outline SOT1135B
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT1135B
sot1135b_po
09-10-12
09-12-14
Unit(1)
mm max
nom
min
4.65
3.76
5.26
5.00
9.65
9.40
9.65
9.40
9.65
9.40
9.65
9.40
19.94
18.92
A
Dimensions
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Earless flanged ceramic package; 2 leads SOT1135B
bc
0.18
0.10
DD
1EE
1F
1.14
0.89
HQ
1.70
1.45
U1
9.91
9.65
U2
9.91
9.65
w2
0.51
inches max
nom
min
0.183
0.148
0.207
0.197
0.38
0.37
0.38
0.37
0.38
0.37
0.38
0.37
0.785
0.745
0.007
0.004
0.045
0.035
0.067
0.057
0.39
0.38
0.39
0.38 0.02
c
E
E1
Q
U1
U2
b
2
1
H
Dw2
0 5 10 mm
scale
A
D
F
D1
3D
BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 13 September 2010 10 of 13
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
10. Handling information
11. Abbreviations
12. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. Abbreviations
Acronym Description
LDMOS Laterally Diffused Metal-Oxide Semiconductor
RF Radio Frequency
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLL6H0514L-130_0514LS-130 v.2 20100913 Product data sheet - BLL6H0514L-130_
0514LS-130 v.1
Modifications: •Section 1.1 on page 1: Caution about ESD has been moved to Section 10 on
page 10.
•The status of this data sheet has been changed to Product data sheet.
BLL6H0514L-130_0514LS-130 v.1 20100809 Preliminary data sheet - -
BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 13 September 2010 11 of 13
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conf lict with the short data sheet, the
full data sheet shall pre vail.
Product specificat ion — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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Notwithstanding any damages that customer might incur for any reason
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Applications — Applications that are described herein for any of these
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representation or warranty tha t such application s will be suitable for the
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Customers are responsible for the design and ope ration of their applications
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Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains t he product specification.
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Product data sheet Rev. 2 — 13 September 2010 12 of 13
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
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the product is not suitable for automotive use. It i s neither qua lified nor test ed
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In the event that customer uses the product for design-in and use in
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13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLL6H0514L(S)-130
LDMOS driver transistor
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 September 2010
Document identifier : BLL6 H0 51 4L- 13 0_ 051 4LS -1 30
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 4
7.1 Impedance information. . . . . . . . . . . . . . . . . . . 4
7.2 Performance curves . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Handling information . . . . . . . . . . . . . . . . . . . . 10
11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information . . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
