©2004 Fairchild Semiconductor Corporation Rev. A, January 2004
2N5245
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: Pulse ≤ 300µs
Thermal Charac teris tics Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VDG Drain-Gate Voltage 30 V
VGS Gate-Source Voltage -30 V
IGF Forward Gate Current 10 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Param eter Test Condition Min . Max . Units
Off Characteristics
V(BR)GSS Gate-Source Breakdwon Voltage IG = 1.0µA, VDS = 0 -30 V
IGSS Gate Reverse Current VGS = 25V, VDS = 0 -1.0 nA
VGS(off) Gate-Source Cutof f Voltage VDS = 15V, ID = 1.0nA -1.0 -0.6 V
On Characteristics
IDSS Zero-Gate Voltage Drain Current * VDS = 15V, VGS = 0 5 15 mA
Small Signal Characteristics
gfs Forward Transferconductance VGS = 0V, V DS = 15V, f = 1.0kHz 4500 11000 µmhos
goss Common- Source Output Conductance VGS = 0V, VDS = 15V, f = 1.0kHz 50 µmhos
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
2N5245
N-Channel RF Amplifier
• This device is designed for HF/VHF mixer/amplifier and applications
where process 50is not adequate. Sufficient gain and low noise for
sensitive receivers.
• Sourced from process 90.
TO-92
1. Gate 2. Source 3. Drain
1
Package Dimensions
2N5245
Dimensions in Millimeters
Rev. A, January 2004
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
©2004 Fairchild Semiconductor Corporation
©2004 Fairchild Semiconductor Corporation Rev. I6
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