BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V Collector-Emitter Voltage : BUT11F : BUT11AF 400 450 V V Collector-Base Voltage VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Collector Dissipation (TC=25C) 40 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) ICES Parameter * Collector-Emitter Sustaining Voltage : BUT11F : BUT11AF Test Condition IC = 100mA, IB = 0 Min. Typ. Max. Units 400 450 V V Collector Cut-off Current : BUT11F : BUT11AF VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 1 1 mA mA IEBO Emitter Cut-off Current VBE = 9V, IC = 0 10 mA VCE(sat) Collector-Emitter Saturation Voltage : BUT11F : BUT11AF IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A 1.5 1.5 V V Base-Emitter Saturation Voltage : BUT11F : BUT11AF IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A 1.3 1.3 V V 1 s 4 s 0.8 s VBE(sat) tON Turn On Time tSTG Storage Time tF Fall Time VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 100 * Pulsed: pulsed duration = 300s, duty cycle = 1.5% Thermal Characteristics TC=25C unless otherwise noted Symbol RjC Parameter Thermal Resistance, Junction to Case (c)2001 Fairchild Semiconductor Corporation Typ Max 3.125 Units C/W Rev. A2, August 2001 BUT11F/11AF Typical Characteristics 1000 10 VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 5V 100 10 IC = 5 IB 1 0.1 VCE(sat) 0.01 0.01 1 0.01 0.1 1 0.1 1 10 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 10 10 IC[A], COLLECTOR CURRENT VBE(sat)[V], SATURATION VOLTAGE IC = 5 IB VBE(sat) 1 0.1 0.01 0.01 0.1 1 8 6 4 2 0 IC[A], COLLECTOR CURRENT 200 400 600 800 1000 1200 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Figure 4. Reverse Biased Safe Operating Area 80 10 70 DC 1 0.1 BUT11AF BUT11F 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area (c)2001 Fairchild Semiconductor Corporation 60 50 40 30 20 10 0 0.01 1 PC[W], POWER DISSIPATION Ic MAX (Continuous) IC[A], COLLECTOR CURRENT BUT11AF BUT11F 0 10 1000 0 25 50 75 100 125 150 175 O TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A2, August 2001 BUT11F/11AF Package Demensions 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H3