Supertex inc.
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
VP0550
Features
►Free from secondary breakdown
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►High input impedance and high gain
►Excellent thermal stability
►Integral source-to-drain diode
Applications
►Motor controls
►Converters
►Ampliers
►Switches
►Power supply circuits
►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex VP0550 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefcient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Pin Conguration
P-Channel Enhancement-Mode
Vertical DMOS FETs
GATE
SOURCE
DRAIN
Product Marking
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiVP
0550
YYWW
TO-92 (N3)
TO-92 (N3)
Package may or may not include the following marks: Si or
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the
device may occur. Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect
device reliability. All voltages are referenced to device ground.
Ordering Information
Device
Package Wafer / Die Options
TO-92 NW
(Die in wafer form)
NJ
(Die on adhesive tape)
ND
(Die in wafe pack)
VP0550 VP0550N3-G VP1550NW VP1550NJ VP1550ND
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specication VF15 for layout and dimensions.
Product Summary
Device BVDSS/BVDGS
(V)
RDS(ON)
(max)
(Ω)
ID(ON)
(min)
(mA)
VP0550N3-G -500 125 -100
2
VP0550
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Electrical Characteristics (TA = 25°C unless otherwise specied)
Sym Parameter Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage -500 - - V VGS = 0V, ID = -1.0mA
VGS(th) Gate threshold voltage -2.0 - -4.5 V VGS = VDS, ID = -1.0mA
ΔVGS(th) Change in VGS(th) with temperature - 3.5 6.0 mV/OC VGS = VDS, ID = -1.0mA
IGSS Gate body leakage current - - -100 nA VGS = ±20V, VDS = 0V
IDSS Zero gate voltage drain current
- - -10
µA
VGS = 0V, VDS = Max Rating
- - -1000 VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
ID(ON) On-state drain current - -90 - mA VGS = -5.0V, VDS = -25V
-100 -240 - VGS = -10V, VDS = -25V
RDS(ON)
Static drain-to-source on-state resis-
tance
- 85 - ΩVGS = -5.0V, ID = -5mA
- 80 125 VGS = -10V, ID = -10mA
ΔRDS(ON) Change in RDS(ON) with temperature - 0.85 - %/OC VGS = -10V, ID = -10mA
GFS Forward transconductance 25 40 - mmho VDS = -25V, ID = -10mA
CISS Input capacitance - 40 70
pF
VGS = 0V,
VDS = -25V,
f = 1.0MHz
COSS Common source output capacitance - 10 20
CRSS Reverse transfer capacitance - 3.0 10
td(ON) Turn-on delay time - 5.0 10
ns
VDD = -25V,
ID = -100mA,
RGEN = 25Ω
trRise time - 8.0 10
td(OFF) Turn-off delay time - 8.0 15
tfFall time - 5.0 16
VSD Diode forward voltage drop - -0.8 -1.5 V VGS = 0V, ISD = -0.1A
trr Reverse recovery time - 200 - ns VGS = 0V, ISD = -0.1A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Thermal Characteristics
Package
ID
(continuous)†
(mA)
ID
(pulsed)
(mA)
Power Dissipation
@TC = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
†
(mA)
IDRM
(mA)
TO-92 -54 -250 1.0 125 170 -54 -250
Notes:
† ID (continuous) is limited by max rated Tj .
90%
10%
90% 90%
10%
10%
Pulse
Generator
V
DD
R
L
Output
D.U.T.
t
(ON)
td(ON)
t(OFF)
td(OFF) tf
tr
INPUT
INPUT
OUTPUT
0V
VDD
R
GEN
0V
-10V
3
VP0550
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves
Output Characteristics
0 -10 -20 -30 -40 -50
Saturation Characteristics
0 -2 -4 -6 -8 -10
Maximum Rated Safe Operating Area
-1 -10 -100 -1000
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
Transconductance vs. Drain Current
100
80
60
40
20
0
G
FS
(millisiemens)
Power Dissipation vs. Case Temperature
0 25 50 75 100 125 150
-100
-80
-60
-40
-20
0
0.001 0.01 0.1 1.0 10
T
A
= -55
O
C
VGS = -10V
VGS = -10V
-5V
-8V
-1.0
-0.1
-0.01
-0.001
2.0
1.0
0
-0.5
-0.4
-0.3
-0.2
-0.1
0
-7V
-6V
-5V
-4V
-8V -6V
0 -0.05 -0.10 -0.15 -0.20 -0.25
TO-92(DC)
P
D
= 1.0W
T
C
= 25
O
C
TC = 25OC
V
DS
(volts)
I
D
(amperes)
I
D
(milliamps)
V
DS
(volts)
I
D
(amperes) T
C
(
O
C)
P
D
(watts)
V
DS
= -25V
V
DS
(volts) t
P
(seconds)
25
O
C
150
O
C
I
D
(amperes)
4
VP0550
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves (cont.)
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
80
60
40
20
0
C (picofarads)
0 -10 -20 -30 -40
0 -2.0 -4.0 -6.0 -8.0 -10
-50 0 50 100 150
1.15
1.10
1.05
1.00
0.95
0.90
-0.4
-0.2
0
f = 1MHz
-10
-8
-6
-4
-2
00 0.2 0.4 0.6 0.8 1.0
83pF
30pF
200
160
120
80
40
00 -0.05 -0.10 -0.15 -0.20 -0.25
V
(th)
@ -1.0mA
R
DS(ON)
@ -10V, -10mA
1.10
1.05
1.00
0.95
0.90
0.85
2.0
1.6
1.2
0.8
0.4
0
RDS(ON) (ohms)
BVDSS (normalized)
T
j
(
O
C) I
D
(amperes)
BV
DSS
Variation with Temperature
V
GS
= -5V
V
GS
= -10V
VGS(th) (normalized)
V
(th)
and R
DS
Variation with Temperature
V
GS
(volts)
ID (amperes)
RDS(ON) (normalized)
V
DS
= -25V
T
A
= -55
O
C
C
ISS
C
OSS
C
RSS
QG (nanocoulombs)
VGS (volts)
VDS (volts)
V
DS
= -40V
V
DS
= -10V
T
j
(
O
C)
T
A
= 25
O
C
T
A
= 150
O
C
-50 0 50 100 150
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA
94089
Tel: 408-222-8888
www
.supertex.com
5
VP0550
(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-VP0550
B030411
3-Lead TO-92 Package Outline (N3)
Symbol A b c D E E1 e e1 L
Dimensions
(inches)
MIN .170 .014†.014†.175 .125 .080 .095 .045 .500
NOM - - - - - - - - -
MAX .210 .022†.022†.205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specied in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Seating
Plane
1
2
3
Front View Side View
Bottom View
E1 E
D
e1
L
e
c
1 2 3
b
A