Document Number: 93280 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 06-Nov-08 1
Schottky Rectifier, 2 A
21DQ06
Vishay High Power Products
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
DESCRIPTION
The 21DQ06 axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
PRODUCT SUMMARY
IF(AV) 2 A
VR60 V
DO-204AL
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 2 A
VRRM 60
V
VF2 Apk, TJ = 125 °C 0.55
TJRange - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 21DQ06 UNITS
Maximum DC reverse voltage VR60 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4 IF(AV) 50 % duty cycle at TC = 106 °C, rectangular waveform 2
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
340
10 ms sine or 6 ms rect. pulse 60
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 8 mH 4.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93280
2Revision: 06-Nov-08
21DQ06
Vishay High Power Products Schottky Rectifier, 2 A
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
TYP. MAX.
Maximum forward voltage drop VFM (1)
2 A TJ = 25 °C 0.53 0.60
V
4 A 0.67 0.75
2 A TJ = 125 °C 0.49 0.55
4 A 0.61 0.67
Maximum reverse leakage current IRM (1) TJ = 25 °C VR = Rated VR
0.02 0.50 mA
TJ = 125 °C 7.0 10
Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 120 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 8.0 nH
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg - 40 to 150 °C
Maximum thermal resistance,
junction to ambient RthJA
DC operation
Without cooling fin 100
°C/W
Typical thermal resistance,
junction to lead RthJL
DC operation
See fig. 4 25
Approximate weight 0.33 g
0.012 oz.
Marking device Case style DO-204AL (D-41) 21DQ06
dPtot
dTJ
------------- 1
RthJA
--------------<
Document Number: 93280 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 06-Nov-08 3
21DQ06
Schottky Rectifier, 2 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Note
(1) Formula used: TL = TJ - (Pd + PdREV) x RthJL;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
0.1
1
10
0 0.3 0.6 0.9 1.2
F
FM
T = 150°C
T = 125°C
T = 2 5 ° C
J
J
J
Forward Voltage Drop - V (V)
Instantaneous Forward Current - I (A)
0.0001
0.001
0.01
0.1
1
10
100
0204060
R
R
125°C
100°C
75°C
50°C
25°C
Reverse Current - I (mA)
Reverse Voltage - V (V)
T = 1 5 0 ° C
J
10
100
1000
0204060
R
T
Junction Capacitance - C (pF)
Reverse Voltage - V (V)
T = 2 5 ° C
J
0
30
60
90
120
150
0123
DC
F( A V )
se e n o te ( 1 )
Average Forward Current - I (A)
Sq ua re w ave (D = 0.50)
80% Ra ted V a p p lied
R
Allowa ble Lead Temperature - (°C)
= 1/8 inch
0
0.4
0.8
1.2
1.6
2
0123
DC
Average Power Loss - (Watts)
F( A V )
RM S Li m i t
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Average Forward Current - I (A)
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4Revision: 06-Nov-08
21DQ06
Vishay High Power Products Schottky Rectifier, 2 A
Fig. 6 - Maximum Non-Repetitive Surge Current
ORDERING INFORMATION TABLE
10
100
1000
10 100 1000 10000
FSM
Non-Repetitive S
urge Current - I (A)
p
At Any Rat ed Loa d Cond it ion
And With Rated V Ap p lied
Fo llo w in g Su rg e
RRM
Squa re Wave Pulse Dura t io n - t (mic rosec )
1- 21 = 2.1 A (axial and small packages - current is x 10)
2- D = DO-41 package
3- Q = Schottky Q.. series
4- 06 = Voltage rating: 60 V
5- TR = Tape and reel package (5000 pcs)
TB = Tape and box package (ammunition - 3000 pcs)
None = Box package (1000 pcs)
Device code
51324
21 D Q 06 TR
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95241
Part marking information http://www.vishay.com/doc?95304
Packaging information http://www.vishay.com/doc?95308
Document Number: 95241 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 22-Nov-07 1
Axial DO-204AL (DO-41)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
2.70 (0.106)
2.29 (0.090) DIA.
2.70 (0.106)
2.29 (0.090) DIA.
0.86 (0.034)
0.72 (0.028)
(2 places)
27.0 (1.06) MIN.
(2 places)
5.21 (0.205)
MAX.
5.21 (0.205)
MAX.
27.0 (1.06) MIN.
(2 places)
1.27 (0.050) MAX.
Flash (2 places)
DIA.
0.86 (0.034)
0.72 (0.028)
(2 places)
DIA.
Cathode band
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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