MIL SPECS WHE D MM 0000125 00326bb & MBNILS 1_INCH-POUND | The documentation and process conversion M1L-S-19500/383A measures necessary to comply with this revision shall be completed by 2 June 93- 2 SUPERSEDING MIL-S-19500/383 14 January 1969 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5139A THROUGH 1N5148A NON-TX, TX, AND TXV This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for a silicon, voltage-variable-capacitor The prefix "TX" is used on devices submitted diode for use in tuning and harmonic generator applications. to and passing the special process-conditioning, testing, and screening specified in 4.5 through 4.5.7.3. The prefix "TXV" is used on devices submitted to and passing the internal visual inspection specified in 4.6. . 1.2 Physical dimensions. See figure 1 (D0-7) (See table V). 1.3 Maximum ratings. Py a Van (wkg> Ver c Capacitance Qa ratio Limit Vp =4Vde f = 50 MHz Ip = 10 pA de f = 1 MHZ Ve =4Vdc aw V_(pk) Vide pf Minimum | ---- ---- 65 (See (See (See table Iv) table Iv) table IV) Maximum | 400 60 ooo= (See --- ---- table IV) 1/ Derate Linearly 2.67 mw/C above 25C. OPERATING AMBIENT TEMPERATURE: ~-65C TO +175C. STORAGE TEMPERATURE: -65C TO +200C. | Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be | of use in improving this document should be addressed to: Commander, Defense Electronics Supply |Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5270 by using the Standardization {Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. FSC 5961 AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.MIL SPECS QUE D MM 0000325 00328667 T MNILS MIL-S-19500/383A 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those Listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-202 - Test Methods for Electronic and Electrical Component Parts. MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Standardization Documents Order Desk, Building 4D, 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this specification shall take precedence. 3. REQUIREMENTS 3.1 Associated detail specification. The individual item requirements shall be in accordance with MIL-S-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-S-19500 and as follows: Qe... 2. ee eee Quality factor (ratio of reactance to effective resistance) Teh ees . .. Temperature coefficient of capacitance. 3.3 Design, construction, and physical dimensions. The diode shall be of the design, construction, and physical dimensions as specified in MIL-S-19500 and as shown on figure 1 herein. 3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD-750 and MIL-S-19500, and herein. Lead finish may be specified in the contract (see 6.2), without affecting the qualified product status of the device or applicable JAN marking. 3.4 Process-conditioning, testing, and screening for "TX" types. Process-conditioning, testing, and screening for the "TX" types shall be as specified in 4.5. 3.4.1 Internal visual (PRECAP) inspection and process-conditioning, testing, and screening of "TXxv" types. The "TXV" device type shall, in addition to all performance requirements, be internally visually inspected and process-conditioned, tested, and screened in accordance with 4.6. 3.5. Marking. Device marking shall be in accordance with MIL-S-19500. At the msanufacturer's option, the following markings may be omitted: a. Manufacturer's identification. b. Country of origin. 3.5.1 Type designation. It is permissible to have the type designation on more than one Line; however, if this is done, the break in the type number shall be as follows: JIN-=------- eee XXX oor UTXIN- - - -------- XXXXMIL SPECS NOTES: wn 44E D MM 00001325 0032468 1 MEMILS MIL-S-19500/383A et oe ee < oD GB Dimensions Symbol Inches Millimeters Notes Min Max Min Max A -230 -300 5.84 | 7.62 B 085 -107 | 2.16 2.72 3 c 7.00 | 1.500 | 25.40 | 38.10 D .018 022 0.46 0.56 1,2 The specified lead diameter applies in the zone between .050 (1.27 mm) and 1.000 (25.40 mm) from the diode body. Outside of this zone the lead diameter is not controlled. Both leads shall be within the specified dimensions. The minimum body diameter shall be maintained over .15 (.38 mm) inch of body length. Metric equivalents are given for general information only. FIGURE 1. Semiconductor device, diode, types 1N5139A_ and 1N5148A (non-TX, TX, and TXV).MIL SPECS W4E D MM 0000125 00328659 3 MBNMILS MIL-S-19500/383A 3.5.2 TX marking. Devices in accordance with the TX requirements shall be marked with a TX preceding the applicable type designation. 3.5.3 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. 3.5.4 XV marking. Devices in accordance with TXV requirements shall be marked in TXV immediately following the JAN prefix. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein. 6.2 Qualification inspection. Qualification inspection shall consist of the examinations and test specified in tables I, 11, and III. Qualification for a particular group of capacitances requires the testing of the lowest- and highest-nominal-capacitance units in the group. The manufacturer has the option of submitting samples individually to subgroups 5 and 6 of group 8 and subgroup 3 of group C inspection or of submitting to the tightened combination of these tests, using a sample size under the LTPO = 5 column and a test duration of 1,000 hours. The number of specimens to be inspected in the group, determination of defectives, and the number of defectives shall be as specified in the qualification inspection procedure of MIL-S-19500 with the exception that the inspection routine for structurally similar devices dees not apply. Ten samples of all other types shall be subjected to subgroup 2 of group A inspection and subgroup 2 of group C inspection. 4.2.1 Qualification testing. The non-TX types shall be used for qualification testing. At the manufacturer's request to the qualifying activity, qualification will be extended to include the 1X and TXV types of the device. 4.3 Quality conformance inspection. Quality conformance inspection shatl consist of the examinations and tests specified in group A, B, and C. (Provisions of MIL-S-19500 early acceptance procedure do not apply to this specification.) Group A inspection and subgroup 2 of group C inspection shall be performed on a sublot basis. Group 8 inspection and subgroup 1 of group C inspection shalt be performed on a lot basis in accordance with MIL-S-19500. A lot shall be considered as a collection of types in the series 1N5139A through 1N5148A. 4.3.1 Inspection Lot. Inspection (ot shall be defined in MIL-S-19500 except that the Lot accumulation period requirements shall be 6 months in Lieu of 6 weeks. 4.3.2 Group A inspection. Group A inspection shall be conducted in accordance with MIL-S-19500, and table 1 herein. 4.3.3 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table II herein. 4.3.4 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table III herein. This inspection shall be conducted on the initial lot and thereafter every 6 months during production. 4.4 Methods of inspection. Methods of inspection shall be as specified in tables I, II, and III, the referenced methods of MIL-ST0-750, and the figures herein. Section 4 of MIL-ST0-750 is applicable. 4.4.1 Terminal strength and salt atmosphere. Electrical rejects or structurally similar devices may be used for subgroup 4 of group B inspection and subgroup 1 of group C inspection. 4.4.2 Temperature coefficient of capacitance test. Throughout the temperature range specified, the capacitance shall not change by more than the amount specified relative to the capacitance value measured at T= 25C. (Refer to test method 4071 in MIL-STD-750 for guidance in the performance of this test.) 4.5 Process-conditioning, testing, and screening or "TX" types. The procedure for process-conditioning, testing, and screening the "TX" types shall be in accordance with 4.5.1 through 4.5.7.3 and figure 2. The process-conditioning shall be conducted on 100 percent of the Lot, prior to submission of the lot to the tests specified in tables I, II, and III. (At the option of the manufacturer, the non "TX" types may be subjected to process-conditioning and testing.)MIL. SPECS 44E D MM 00001325 0032470 T MHMILS HIL-S-19500/383A TABLE I. Group A_ inspection. MIL-STD-750 Limits 2/ Inspection 1/ Symbol Unit Method Conditions Min Max Subgroup 1 Visual and mechanical} 2071 inspection Subgroup 2 Breakdown voltage 4021 |[I, = 10 pA de By 65 V de Reverse current 4016 VR = 55 V de; dc method Ip 20 nA de Reverse current 4016 Vp = 55 V dc; de method Ip 20 pA dc tT, = 150C Capacitance 4001 Va =4Vdc; f = 1 MHz Cc Column | Column | pf 3 4 Capacitance ratio 4001 [From Vv, = 4 V dc to Ve = 60 V de; Column operation f=1 Ruz 5 Quality factor 4036 Va = 4 V de; f = 50 MHz Q Column table Vv 6 4/ For sampling plans, see MIL-S-19500. 2/ Column references are to table IV herein.MIL SPECS GUE D MM 0000125 0032871 1 MENILS MIL-S-19500/383A TABLE II. Group B inspection . MIL-STD-750 Limits 2/ Inspection 14/ Symbol Unit Method Conditions Min Max Subgroup 1 Physical dimensions 2066 See figure 1 Subgroup 2 Solderability 2026 Thermal shock 1051 Test condition C; {temperature cycling) T Chigh) = 175C Thermal shock 1056 Test condition A (glass strain) Terminal strength 2036 Test condition A; 4 pounds; (tension) t= 15 Moisture resistance 1021 End points: Breakdown voltage 4021 Ine 40 pA de BV 65 V de Reverse current 4016 Vp = 55 V dc; de method Ip 20 nA de Capacitance 4001 Ve =4V dc; f = 1 MHZ c Column | Column | pf 3 4 Subgroup 3 Shock (nonoperating) 2016 1500 G; 0.5 ms; 5 blows in each orientation: Xa, qe and 3 Vibration, variable 2056 frequency Constant acceleration 2006 20,000 G; in orientations (nonoperat ing) Xa, Yor and Yo End points: (same as subgroup 2) Subgroup 4 Terminal strength 2036 Test condition E (lead fatigue) tsee 4.4.1) See footnotes at end of table.MIL SPECS 44E D MM 0000325 0032472 3 MMILS MIL-S-19500/383A TABLE II. Group B inspection - Continued. MIL-STD-750 Limits 2/ Inspection 1/ Sysbol Unit Method Conditions Min Max Subgroup 5 High-temperature Life 1032 , = 200C; t = 500 hours (nonoperat ing) End points: (same as subgroup 2) Subgroup 6 Steady-state operation 1027 Ve = 60 V dc; Th, = 150C; life (see 4.3.4.1) t = 500 hours End points: (same as subgroup 2) 1/ For sampling plan, see MIL-S-19500. 2/ Column references are to table IV. TABLE III. Group _ inspection . MIL-ST0-750 Limits 2/ Inspection 1/ Symbol Unit Method Conditions Min Max Subgroup 1 Salt atmosphere 1041 (see 4.4.1) Subgroup 2 Temperature coefficient of capacitance (see 4.4.2) -40C to +85C; TC. 0.03 | x/Cc 4. Vde ae Subgroup 3 Steady-state operation 1026 Vp = 60 V de; Ty = 150C life (see 4.3.4.1) End points: Breakdown voltage 4021 I, = 10 pA dc BV 65 V de Reverse current 4016 VR = 55 V de; de method Ip 20 nA dc Capacitance 4001 Va 4V de; f = 1 MHz c touunn covuan pf 4/ For sampling plan, see MIL-$-19500. 2/ Column references are to table Iv.MIL SPECS WHE D MM 0000125 0032673 5 MBNILS MIL-S-19500/383A TABLE IV. Test ratings for diodes, types (TX, TXV, and _Non-TX) 1N5139A_ through 1N5148. Col 1 Col 2 Cot 3 Col 4 col 5 Cot 6 Capacitance Capacitance ratio Q From Vp = 4V de Ve =4&Vdc Va 74 V de to Vp = 60 V de f = 50 MHz Type (See 1.1) Nom Min Max Min Max pt ef ef 41N5139A 6.8 6.46 7.16 2.7 350 1N5140A 10.0 9.50 10.50 2.8 300 INSI4IA 12.0 11.40 12.60 2.8 300 IN5142A 15.0 14.30 15.70 2.8 250 INSTS3A 18.0 17.10 18.90 2.8 250 INST44A 22.0 20.90 23.10 3.2 200 1N5145A 27.0 25.70 28.30 3.2 200 INS146A 33.0 31.40 34.60 3.2 200 4INS147A 39.0 37.10 40.90 3.2 200 INS148A 47.0 44.70 49.30 3.2 200 4.5.1 Quality assurance (lot verification). Quality assurance shall keep lot records, sonitor for compliance to the prescribed procedures, and observe that satisfactory manufacturing conditions and records on lots are maintained for these devices. The records shall be available for review by the customer at all times. The quality assurance monitoring shall include, but not Limited to: process-conditioning, testing, and screening. (The conditioning and screening tests performed as standard production tests need not be repeated when these are acceptable to the Government beforehand as being equal to or more severe than specified herein and the relative process-conditioning sequence is waintained.) 4.5.2 High-temperature storage. ALL devices shall be stored for at least 48 hours at a miniaum temperature (T,) of 200C.MIL SPECS WUE D MB 0000125 0032874 7 MMNILS MIL-S-19500/383A PRODUCTION PROCESS INSPECTION TESTS , PODUCTLON PROCE heney AFTER Panay. | | LOTS PROPOSED | [TO VERIFY LTPO GROUPS a.p,| | PREEARATION 1. RAW MATERIALS re ASSEMBLY OPERATION i FOR JAN TYPES Hem = GROUP A ie AND C DATA am DELIVERY 2, FACTORY PROCESSING (SEALING) (NON-TX1 ee ; FOR ACCEPT JAN ! LOTS PROPOSED FOR JANTX. TYPES ! 100 PERCENT PROCESS CONDITIONING 100 ERO EME INSPECTION (SEE NOTE) MEMENT OF SPECIFIED PARAMETER TEST 10 VERIFY t. HIGH TEMPERATURE STORAGE SRT OF SPECIFIED PARAMETERS LrPp pay o: - boom 2. TERPERATURE CYCLING! 3. MEASURENENT OF SPECIFIED PARAMETERS GROUP A 3 eee TO DETERMINE DELTA AND OTHER REJECTS GADUP B See TOT TESTS 4. LOT REJECTION CRITERIA BASED ON rR REJECTS FROM BURN-IN TEST REVIEW OF GROUPS A.B, AND DATA FOR LOT ACCEPT QR REJECT PREPARATION FOR DELIVERY JANTX FIGURE 2. Order of procedure diagram for JAN (non-TX) and JANTX types.MI L SPECS 44E D MM 0000325 00328675 9 MENILS MIL-S-19500/383A 4.5.3 Thermal shock (temperature cycling). All devices shall be subjected to thermal shock (temperature cycling) and shall be performed in accordance with MIL-STD-750, method 1051, test condition C, except that 410 cycles shatl be continuously performed and the time at the temperature extremes shall be 15 minutes. 4.5.4 Acceleration. ALL devices shall be subjected to acceleration test in accordance with MIL-STD-750, method 2006, with the following exceptions: The test shall be performed one time in the Y, orientation only, at a peak Level of 20,000 G, minimum. The 1~minute hold-time requirement shall not apply. 4.5.5 Hermetic seal (fine leak) test. All devices shall be fine-leak tested in accordance with MIL-STD-750, method 1071, test condition G or H. 4.5.6 Hermetic seal (gross-teak) test. All devices shall be tested for gross-leaks in accordance with MIL-STD-750, method 1071, test condition D or E. 4.5.7 Preburn-in tests. The parameter I, of table V shall be measured and the data recorded for all devices in the lot. All devices shall be handled or identified such that the delta end points can be determined after the burn-in test. ALL devices which fail to meet these requirements initially will be removed from the inspection Lot and the quantity removed noted on the lot history. TABLE V. Burn-in test measurements. MIL-STO-750 Limits Inspection Symbol Unit Method Details Min | Max Reverse current 4016 Va = 55 V dc; Ip 20 | nA de dc method 4.5.7.1 Burn-in test. All devices shall be operated for 96 hours minimum under the following conditions: ~~ a A= 475C 60 V de < a 4.5.7.2 Post burn-in tests. The parameter Ip, of table V shall be retested after burn-in and the data recorded for all devices in the lot. The parameter measured shalt not have changed during the burn-in test from the initial value by more than the specified amount as follows: Alp = 100% or 5 nanoamperes, whichever is greater. 4.5.7.3 Burn-in test failure (screening). All devices that exceed delta (A) limit of 4.5.7.2 or the Limit of table V after burn-in, shall be removed from the inspection lot and the quantity removed shall be noted on the lot history. Where the quantity removed after burn-in exceeds 10 percent of the total inspection Lot on burn-in test, the entire lot shail be unacceptable as "TX" types. 4.6 Internal visual _(PRECAP) inspection and process-conditioning, testing, and screening of TXV types. The internal visual inspection shall be performed in accordance with test methods 2073 and 2074 of MIL-STD-750 prior to encapsulation on a 100 percent basis and process-conditioning, testing, and screening shalt be as specified in 4.5. The manufacturer shall permit the authorized government representative to witness concurrent with time of manufacturer's performance of these tests, the process-conditioning, testing, and screening of the devices. Those conditioning and screening tests normally performed by a manufacturer as standard production tests need not be repeated when these are predesignated and acceptable to the Government as being equal to or more severe than the test specified herein. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-S-19500. 10MIL SPECS WUE D MM 0000125 0032476 O MBMILS MIL-S-19500/383A 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory) 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DODISS to be cited in the solicitation. b. Lead finish (see 3.3.1). c. Product assurance level and type designator. 6.3 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue, due to the extensiveness of the changes. CONCLUDING MATERIAL Custodians: Preparing activity: Navy - EC Navy - EC Air Force - 17 Agent: Review Activities: DLA - ES Navy - SH Air Force - 85, 99 (Project 5961-NO72) DLA - ES User activities: Navy - AS, CG, MC 1