STD30NF06LT4 - STMicroelectronics

1/10July 2002

STD30NF06L

N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK

STripFET™ PO WE R MOSF ET

(1 ) ISD ≤38A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

■TYPICAL RDS(on) = 0.022Ω

■EXCE PTIONAL dv/d t CAPABILITY

■LOGIC LEVEL GATE DRIVE

■ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

■ADD SUFFIX “-1” FOR ORDERING IN IPAK

■CHARACTERIZATION ORIENTED FOR

AUTOMOTIVE APPLICATIONS

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique “Single Feature

Size™” strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalance characteris-

tics and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

■HIGH-EFFICIENCY DC-DC CONVERTERS

■MOTOR CONTROL, AUDIO AMPLIFIERS

■DC-DC & DC-AC C ONVERTERS

■AUTOMOTIVE

ABSOLUTE MAXIMUM RATINGS

(●) Pulse width limited by safe operating area

TYPE VDSS RDS(on) ID

STD30NF06L 60 V <0.028Ω35 A

Symbol Parameter Value Unit

VDS Drain-source Voltage (VGS = 0) 60 V

VDGR Drain-gate Voltage (RGS = 20 kΩ)60 V

VGS Gate- source Voltage ± 20 V

IDDrain Current (continuous) at TC = 25°C 35 A

IDDrain Current (continuous) at TC = 100°C 25 A

IDM (

)Drain Current (pulsed) 140 A

PTOT Total Dissipation at TC = 25°C 70 W

Derating Factor 0.46 W/°C

dv/dt (1) Peak Diode Recovery voltage slope 25 V/ns

Tstg Storage Temperature – 55 to 175 °C

TjOperating Junction Temperature

DPAK

113

IPAK

INTERNAL SCHEMATIC DIAGRAM

STD30NF06L

2/10

THE RMA L D ATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACT ERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-case Thermal Resistance Junction-case Max 2.14 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W

TlMaximum Lead Temperature For Soldering Purpose 275 °C

Symbol Paramet er Max Value Unit

IAR Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max) 35 A

EAS Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 150 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source

Breakdown Voltage ID = 250 µA, VGS = 0 60 V

IDSS Zero Gate Voltage

Drain Current (VGS = 0) VDS = Max Rating 1µA

DS = Max Rating, TC = 125 °C 10 µA

IGSS Gate-body Leakage

Current (VDS = 0) VGS = ± 20 V ±100 nA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 2.5 V

RDS(on) Static Drain-source On

Resistance VGS = 5 V, ID = 18 A 0.025 0.03 Ω

VGS = 10 V, ID = 18 A 0.022 0.028 Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (1) Forward Transconductance VDS > =15 V , ID=15 A 25 S

Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1600 pF

Coss Output Capacitance 215 pF

Crss Reverse Transfer

Capacitance 60 pF

3/10

STD30NF06L

ELECTRICAL CHARACT ERISTICS (CONTINUED)

SWITCHIN G ON

SWITCHIN G OFF

SOURCE DRAIN DIODE

Note: 1. Pul sed: Pulse duration = 300 µs , duty cycl e 1.5 % .

2. Pulse width li m i ted by saf e operat i ng area.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on) Turn-on Delay Time VDD = 30 V, ID = 18 A

RG= 4.7Ω VGS = 4.5 V

(see test circuit, Figure 3)

30 ns

trRise Time 105 ns

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 48 V, ID = 38 A,

VGS = 5 V 23

31 nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(off)

tfTurn-off-Delay Time

Fall Time VDD = 30 V, ID = 18 A,

RG=4.7Ω, VGS = 4.5 V

(see test circuit, Figure 3)

25 ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ISD Source-drain Current 35 A

ISDM (2) Source-drain Current (pulsed) 140 A

VSD (1) Forward On Voltage ISD = 35 A, VGS = 0 1.5 V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 38 A, di/dt = 100 A/µs,

VDD = 15 V, Tj = 150°C

(see test circuit, Figure 5)

140

Normalized Thermal ImpedenceSafe Op erating Area

STD30NF06L

4/10

Output Characteri stics

Gate Charge vs Gate-so urc e Voltage

Transco nductan ce Static Drain-so urce On Resistance

Transfer Characteri stics

Capacitance Va ria tions

5/10

STD30NF06L

Norma lized Gate Thresh ol d Voltage vs

Temperature

Norma lized Drain-Sou rce Breakdow n vs

Temperature Source-drain Diode Forward Characteristics

Normalized On Resistance vs Temp eratu re

STD30NF06L

6/10

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Induc tive WaveformFig. 1: Unclamped Induc tive Load Test Circuit

Fig. 3: Switching Tim es Test Circuit For

Resis tive Load

7/10

STD30NF06L

DIM. mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094

A1 0.9 1.1 0.035 0.043

A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031

B2 5.2 5.4 0.204 0.212

B3 0.85 0.033

B5 0.3 0.012

B6 0.95 0.037

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370

L1 0.8 1.2 0.031 0.047

L2 0.8 1 0.031 0.039

1 3

= =

TO-251 (I PA K) ME CH ANI CAL DAT A

0068771-E

STD30NF06L

8/10

DIM. mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.20 2.40 0.087 0.094

A1 0.90 1.10 0.035 0.043

A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035

B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024

C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398

L2 0.8 0.031

L4 0.60 1.00 0.024 0.039

V2 0

P032P_B

TO-252 (DPAK) MECHANICAL DATA

STD30NF06L

9/10

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

DPA K FOOTPRINT

DIM. mm inch

MIN. MAX. MIN. MAX.

A 330 12.992

B1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968

T 22.4 0.881

BASE QTY BULK QTY

2500 2500

REEL MECHANICAL DATA

DIM. mm inch

MIN. MAX. MIN. MAX.

A0 6.8 7 0.267 0.275

B0 10.4 10.6 0.409 0.417

B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299

K0 2.55 2.75 0.100 0.108

P0 3.9 4.1 0.153 0.161

P1 7.9 8.1 0.311 0.319

P2 1.9 2.1 0.075 0.082

R40 1.574

W 15.7 16.3 0.618 0.641

TAP E MECHANICAL DATA

All dimensions

are in millime ters

All dimensions are in millimeters

STD30NF06L

10/10

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no respons ibilit y for the

consequences of use o f su ch informat ion nor for any infri ngement of p atents or other rights of third parties w hich may result from

its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectron ics. Specifications

mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information

prev iously supplied. STMic ro electro nics produ cts ar e not auth orized f or use as critica l compone nts in life support dev ices or

systems without express written approval of STMicroelectronics.

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