PD - 91564D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) IRHM7064 JANSR2N7431 60V, N-CHANNEL REF:MIL-PRF-19500/663 (R) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7064 100K Rads (Si) IRHM3064 300K Rads (Si) IRHM4064 600K Rads (Si) IRHM8064 1000K Rads (Si) R DS(on) ID QPL Part Number 0.021 35*A JANSR2N7431 0.021 35*A JANSF2N7431 0.021 35*A JANSG2N7431 0.021 35*A JANSH2N7431 TO-254AA HEXFET(R) technol- International Rectifiers RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Units 35* 35 284 250 2.0 20 500 35 25 2.5 -55 to 150 A W W/C V mJ A mJ V/ns o 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical ) C g For footnotes refer to the last page *Current is limited by pin diameter www.irf.com 1 8/9/01 IRHM7064 Pre-Irradiation @ Tj = 25C (Unless Otherwise Specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Typ Max Units 60 V 0.056 V/C 0.021 2.0 18 4.0 25 250 V S( ) 6.8 100 -100 270 60 110 27 120 120 100 Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 35A nC VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 30V ns VDD =30V, ID = 35A VGS =12V, RG = 2.35 Electrical Characteristics A nA nH Measured from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from Package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 4900 2800 860 VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time 35* 284 1.5 360 3.1 Test Conditions A V nS C Tj = 25C, IS = 35A, VGS = 0V Tj = 25C, IF = 35A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. *Current is limited by pin diameter Thermal Resistance Parameter R thJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min Typ Max Units 0.50 48 0.21 C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHM7064 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Parameter BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" On-State Resistance (TO-3) Static Drain-to-Source" On-State Resistance (TO-254AA) Diode Forward Voltage" Test Conditions 300 - 1000K Rads (Si) Min Max U nits Units 4.0 100 -100 25 0.021 60 1.25 4.5 100 -100 50 0.031 V A VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=48V, VGS =0V VGS = 12V, ID =35A 0.021 0.031 VGS = 12V, ID =35A 1.5 1.5 V VGS = 0V, IS = 35A 100K Rads(Si) Min Max 60 2.0 nA 1. Part numbers IRHM7064 2. Part number IRHM3064, IRHM4064 and IRHM8064 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion I Br LET MeV/(mg/cm )) 59.9 36.8 VDS(V) Energy Range @VGS=0V@VGS=-5V@VGS=-10V@VGS=-15V @VGS=-20V (MeV) (m) 345 32.8 60 60 45 40 30 305 39 40 35 30 25 20 80 VDS 60 BR 40 I 20 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM7064 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 100 1 10 10 0.1 100 VDS , Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 TJ = 25 C TJ = 150 C V DS = 25V 20s PULSE WIDTH 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 1000 100 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5 5.0V 20s PULSE WIDTH TJ = 150 C 20s PULSE WIDTH 5.0V T = 25 C J 10 0.1 10 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 12 ID = 79A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 8000 6000 Ciss Coss 4000 2000 Crss 0 1 10 20 VGS , Gate-to-Source Voltage (V) 10000 IRHM7064 ID = 35A VDS = 48V VDS = 30V VDS = 12V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 VDS , Drain-to-Source Voltage (V) 100 150 200 250 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25 C ID , Drain Current (A) ISD , Reverse Drain Current (A) 50 TJ = 150 C 100 100us 100 10 1 0.0 V GS = 0 V 1.0 2.0 3.0 4.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 5.0 1ms 10 TC = 25 C TJ = 150 C Single Pulse 1 10ms 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM7064 Pre-Irradiation 80 LIMITED BY PACKAGE VGS ID , Drain Current (A) RD VDS D.U.T. 60 RG 40 Pulse Width 1 s Duty Factor 0.1 % + -VDD VGS Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 0.001 0.00001 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM7064 EAS , Single Pulse Avalanche Energy (mJ) 1400 TOP 1200 15V BOTTOM ID 16A 22A 35A 1000 L VDS D.U.T RG V/5 20V IAS DRIVER + - VDD 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM7064 Pre-Irradiation Foot Notes: Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25C, L=0.82mH Peak IL = 35A, VGS =12V ISD 35A, di/dt 220A/s, VDD 60V, TJ 150C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions TO-254AA .12 ( .005 ) 13.84 ( .545 ) 13.59 ( .535 ) 3.78 ( .149 ) 3.53 ( .139 ) -A- 20.32 ( .800 ) 20.07 ( .790 ) 17.40 ( .685 ) 16.89 ( .665 ) 31.40 ( 1.235 ) 30.39 ( 1.199 ) 3.81 ( .150 ) 2X 6.60 ( .260 ) 6.32 ( .249 ) 1 2 13.84 ( .545 ) 13.59 ( .535 ) -C- 1.14 ( .045 ) 0.89 ( .035 ) .50 ( .020 ) .25 ( .010 ) 1.27 ( .050 ) 1.02 ( .040 ) LEGEND 1 - COLL 2 - EMIT 3 - GATE 3 3X -B- 3.81 ( .150 ) M C A M B M C LEGEND 1- DRAIN 2- SOURCE 3- GATE IRHM57163SED IRHM57163SEU CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.. Data and specifications subject to change without notice. 08/01 8 www.irf.com