TBD62083A series, TBD62084 A series
2015-07-24
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©2015 Toshiba Corporati on
TOSHIBA BiCD In tegrated Circuit Silicon Monolithic
TBD62083APG, TBD62083AFG, TBD62083AFNG, TBD62083AFWG
TBD62084APG, TBD62084AFG, TBD62084AFNG, TBD62084AFWG
8channel sink type DMOS transistor arr ay
TB62083A series and TB62084A series are DMOS transistor
array with 8 circuits. It has a clamp diode for switching
inductive loads built-in in each output. Please be careful
about ther ma l conditions during use.
Features
• 8 circuit s bui lt-in
• High voltage : VOUT = 50 V (MAX)
• High current : IOUT = 500 mA/ch (MAX)
• Input volt age(output on) : TBD62083A series 2.5 V (MIN)
TBD62084A series 7.0 V (MIN)
• Input volt age(output of f) : TBD62083A series 0.6 V (MAX)
TBD62084A series 1.0 V (MAX)
• Package : PG type P-DIP18-300-2.54-001
FG type SOP18-P-375-1.27
FNG type SSOP18-P-225-0.65
FWG type P-SOP18-0812-1.27-001
Pin connec ti on (top view)
Pin connection may be simplif ie d for explanatory pur pos e.
TBD62083APG, TBD62084APG
P-DIP18-300-2.54-001
TBD62083AFG, TBD62084AF G
SOP18-P-375-1.27
TBD62083AFNG, TBD62084AF NG
SSOP18-P-225-0.65
TBD62083AFWG, TBD62084AFWG
P-SOP18-0812-1.27-001
Weight
P
-DIP18-300-2.54-001 : 1.47 g (Typ.)
SOP18
-P-375-1.27 : 0.41 g (Typ.)
SSOP18
-P-225-0.65 : 0.09 g (Typ.)
P-SOP18-0812-1.27-001 : 0.48 g (Typ.)
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Pin explanati ons
Pin No. Pin name Function
1
I1
Input pin
2
I2
Input pin
3
I3
Input pin
4
I4
Input pin
5
I5
Input pin
6
I6
Input pin
7
I7
Input pin
8
I8
Input pin
9
GND
GND pin
10
COMMON
Common pin
11
O8
Output pin
12
O7
Output pin
13
O6
Output pin
14
O5
Output pin
15
O4
Output pin
16
O3
Output pin
17
O2
Output pin
18
O1
Output pin
Equivalent circuit (each driver)
Equivalent circuit may be simplified for explanator y purpose.
Clamp
COMMON
OUTPUT
Clamp diode
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Absolute Maximum Ratings (Ta = 25 °C)
Characteristics Symbol Rating Unit
Output voltage
V
OUT
50
V
COMMO N pi n voltage
V
COM
−0.5 to 50
V
Output cur r ent IOUT 500
mA/c
h
Input v oltage
V
IN
−0.5 to 30
V
Clamp diod e r everse voltage
V
R
50
V
Clamp diod e f or ward current
I
F
500
mA
Power
dissipation
PG (Note1)
PD
1.47
W
FG (Note2)
0.96
FNG (Note3)
0.96
FWG (Note4)
1.31
Operating temperatur e
T
opr
−40 to 85
°C
Storage t em per at ur e
T
stg
−55 to 150
°C
Note1: Device alone. When Ta exceeds 25 ° C, it is necessary t o do the derating with 11. 8 mW/°C.
Note2: Device alone. When Ta exceeds 25 °C, it is necessary to do the der ating with 7.7 mW/°C.
Note3: On PCB (S iz e: 50 mm × 50 mm × 1.6 mm, Cu area: 40 %, single-side glass epoxy).
When Ta exceeds 25 °C, it is necessary to do the der at ing w ith 7.7 mW/°C.
Note4: On PCB (S iz e: 75 mm × 114 mm × 1.6 mm, Cu are a: 20 %, single-side glass epoxy).
When Ta exceeds 25 °C, it is necessary to do the der at ing w ith 10.48 mW/°C.
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Operating Ranges (Ta = −40 to 85 °C)
Characteristics Symbol
Condition Min Typ. Max Unit
Output voltage
V
OUT
―
―
―
50
V
COMMO N pi n voltage
V
COM
―
0
―
50
V
Output
current
PG
(Note1)
IOUT
1 circuits ON, Ta = 25°C 0 ― 400
mA/ch
tpw = 25 ms
8 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10% 0 ―
390
Duty = 50% 0 ― 170
FG
(Note1)
1 circuits ON, Ta = 25°C 0 ― 400
tpw = 25 ms
8 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10% 0 ― 320
Duty = 50% 0 ― 140
FNG
(Note2)
1 circuits ON, Ta = 25°C 0 ―
400
tpw = 25 ms
8 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10% 0 ― 320
Duty = 50% 0 ― 140
FWG
(Note3)
1 circuits ON, Ta = 25°C 0 ― 400
tpw = 25 ms
8 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10% 0 ― 370
Duty = 50% 0 ― 160
Input
voltage
(Output on)
TBD62083A
series VIN
(ON)
IOUT = 100 mA or upper , VOUT = 2 V
2.5 ― 25 V
TBD62084A
series IOUT = 100 mA or upper, VOUT = 2 V
7.0 ― 25
Input
voltage
(Output off)
TBD62083A
series VIN
(OFF)
IOUT = 100 μA or less, VOUT = 2 V 0 ― 0.6 V
TBD62084A
series IOUT = 100 μA or less, VOUT = 2 V 0 ― 1.0
Clamp diod e f or ward
current IF ― ― ― 400 mA
Note1: Device alone.
Note2: On PCB (Siz e: 50 mm × 50 mm × 1.6 mm, C u area: 40%, single-side glass epoxy).
Note3: On PCB (S iz e: 75 mm × 114 mm × 1.6 mm, Cu are a: 20%, single-side glass epoxy).
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Electrical Characteristics (Ta = 25°C unless otherwise noted)
Characteristics Symbol
Test
Circuit
Condition Min Typ. Max Unit
Output lea kage current Ileak 1 VOUT = 50V, Ta = 85°C
VIN = 0 V ― ― 1.0 μA
Output
voltage
(Output
ON-resistan
ce)
TBD62083A
series
VDS
(RON) 2
IOUT = 350 mA, VIN =5.0V ― 0.7
(2.0) 1.14
(3.25)
V
(Ω)
IOUT = 200 mA, VIN =5.0V ― 0.4
(2.0) 0.65
(3.25)
IOUT = 100 mA, VIN =5.0V ― 0.2
(2.0) 0.325
(3.25)
TBD62084A
series
IOUT = 350 mA, VIN =7.0V ― 0.7
(2.0) 1.14
(3.25)
IOUT = 200 mA, VIN =7.0V ― 0.4
(2.0) 0.65
(3.25)
IOUT = 100 mA, VIN =7.0V ― 0.2
(2.0) 0.325
(3.25)
Input
current
(Output on)
TBD62083A
series II N (ON) 3 VIN = 2.5 V ― ― 0.1 mA
TBD62084A
series VIN = 7.0 V ― ― 0.5
Input current(Output o ff) IIN (OFF) 4 VIN = 0 V, Ta = 85°C ― ― 1.0 μA
Input
voltage
(Output on)
TBD62083A
series VIN (ON) 5 IOUT = 100 mA, VOUT = 2 V
― ― 2.5 V
TBD62084A
series ― ― 7.0
Clamp diode
reverse cur r ent
IR 6 VR = 50 V, Ta = 85°C ― ― 1.0 μA
Clamp diode
forward voltage
VF 7 IF = 350 mA ― ― 2.0 V
Turn−on delay
t
ON
8 VOUT = 50 V
RL = 125 Ω
CL = 15 pF
― 0.4 ― μs
Turn−off delay tOFF ― 0.8 ―
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Test circuit
1. Ileak 2. VDS (RON)
3. IIN (ON) 4. IIN (OFF)
5. VIN (ON) 6. IR
7. VF
Test circuit may be simpli f ied for explanator y purpose.
COMMON
OUTPUT
INPUT
GND
VOUT
COMMON
OUTPUT
INPUT
GND
IOUT
VIN
VDS
RON = VDS / IOUT
Ileak
COMMON
INPUT
GND
VIN
IIN(ON)
COMMON
INPUT
GND
IIN(OFF)
COMMON
OUTPUT
INPUT
GND
IOUT
VIN(ON)
VOUT
COMMON
OUTPUT
INPUT
GND
IR
VR
COMMON
OUTPUT
INPUT
GND
IF
VF
OUTPUT
OUTPUT
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8. tON, tOFF
Note 1: Pul se width 50 μs, Duty cycle 10%
Output i mpe dance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns
Please refer t o t he following table for t he VI H c ondition.
Product
VIH
TBD62083A series
5.0 V
TBD62084A series
7.0 V
Note 2: CL includes the probe an d t he t est board capacitance.
Test circuit an d timing chart may be simplified for explanat or y purpose.
Precautions for Us i ng
This IC does not include built-in protection c irc uits fo r ex cess cur rent or ov er voltage.
If this IC is sub ject ed to excess cur rent or over voltag e, it may be des t r oyed.
Hence, the utmost care m ust be taken wh en systems which incorporat e t his IC are designed.
Utmost care is necessary in the design of the output line, CO MM ON and GN D lin e since IC may be
destroy ed due t o short−cir cuit bet ween outputs, air contamination fault, or fault by improper grou nding.
(Note 2)
(Note 1)
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Package Dimensions
P-DIP18-300-2.54-001 Unit: mm
Weight: 1.47 g (Typ.)
SOP18-P-375-1.27 Unit: mm
Weight: 0.41 g (Typ.)
TBD62083A series, TBD62084 A series
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©2015 Toshiba Corporati on
SSOP18-P-225-0.65 Unit: mm
Weight: 0.09 g (Typ.)
P-SOP18-0812-1.27-001 Unit: mm
Weight: 0.48 g (Typ.)
TBD62083A series, TBD62084 A series
2015-07-24
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©2015 Toshiba Corporati on
Notes on Contents
1. Pin connection
Pin connect i on may be simplified for explanatory purpose.
2. Equivalent Circuits
Equivalent circuit may be simplified for explanator y purpose.
3. Test circuit
Test circuit may be simpli f ied for explanator y purpose.
4. Timing chart
Timing charts may be simplified for explanatory purposes .
IC Usage Considerations
Notes on handling of ICs
(1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for
a moment. Do not exceed any of these ratings.Exceeding the rating(s) may cause device breakdown, damage or
deterioration, and may result in injury by explosion or combustion.
(2) Do not insert devices in the wrong orientation or incorrectly.Make sure that the positive and negative terminals
of power supplies are connected properly.Otherwise, the current or power consumption may exceed the absolute
maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may
result in injury by explosion or combustion.In addition, do not use any device inserted in the wrong orientation
or incorrectly to which current is applied even just once.
(3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of
overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute
maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the
wiring or load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To
minimize the effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse
capacity, fusing time and insertion circuit location, are required.
(4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to
prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON
or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause
injury, smoke or ignition.Use a stable power supply with ICs with built-in protection functions. If the power
supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause
injury, smoke or ignition.
(5) Carefully select external components (such as inputs and negative feedback capacitors) and load components
(such as speakers), for example, power amp and regulator.If there is a large amount of leakage current such as
from input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is
connected to a speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition.
(The overcurrent may cause smoke or ignition from the IC itself.) In particular, please pay attention when using
a Bridge Tied Load (BTL) connection-type IC that inputs output DC voltage to a speaker directly.
Points to reme m ber on handling of ICs
Heat Radiation Design
When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is
appropriately radiated, in order not to exceed the specified junction temperature (TJ) at any time or under any condition.
These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life,
deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the
effect of IC heat radiation with peripheral components.
Back-EMF
When a motor rotates in the reverse direction,stops or slows abruptly, current flows back to the motor’s power supply
owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power
supply and output pins might be exposed to conditions beyond theabsolute maximum ratings. To avoid this problem, take
the effect of back-EMF into consideration in system design.
TBD62083A series, TBD62084 A series
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