VS-25TTS08S-M3, VS-25TTS12S-M3 Series www.vishay.com Vishay Semiconductors Thyristor, Surface Mount, Phase Control SCR, 16 A FEATURES Anode 2, 4 * Meets MSL level 1, per LF maximum peak of 245 C * Designed and JEDEC(R)-JESD 47 2 according * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 3 Cathode Gate 1 3 qualified J-STD-020, APPLICATIONS D2PAK (TO-263AB) * Input rectification (soft start) * Vishay input diodes, switches and output rectifiers which are available in identical package outlines PRIMARY CHARACTERISTICS IT(AV) 16 A VDRM/VRRM 800 V, 1200 V VTM 1.25 V IGT 45 mA TJ -40 to +125 C Package D2PAK (TO-263AB) Circuit configuration Single SCR DESCRIPTION The VS-25TTS...S-M3 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 m) copper 3.5 5.5 Aluminum IMS, RthCA = 15 C/W 8.5 13.5 Aluminum IMS with heatsink, RthCA = 5 C/W 16.5 25.0 UNITS A Note * TA = 55 C, TJ = 125 C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform 16 25 IRMS VRRM/VDRM ITSM VT VALUES 16 A, TJ = 25 C dV/dt dI/dt TJ UNITS A 800 to 1200 V 350 A 1.25 V 500 V/s 150 A/s -40 to +125 C VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM, AT 125 C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VS-25TTS08S-M3 800 800 VS-25TTS12S-M3 1200 1200 10 Revision: 04-Jan-18 Document Number: 96414 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS08S-M3, VS-25TTS12S-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current Maximum I2t for fusing ITSM I2t TEST CONDITIONS VALUES TYP. MAX. TC = 93 C, 180 conduction half sine wave 16 10 ms sine pulse, rated VRRM applied 300 10 ms sine pulse, no voltage reapplied 350 UNITS 25 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 630 A A2s Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 6300 A2s Maximum on-state voltage drop VTM 16 A, TJ = 25 C 1.25 V 12.0 m 1.0 V On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Holding current Maximum latching current rt VT(TO) IRM/IDM IH IL Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt TJ = 125 C TJ = 25 C TJ = 125 C VS-25TTS08, VS-25TTS12 0.5 VR = rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 C 10 - 150 mA Anode supply = 6 V, resistive load, TJ = 25 C 200 TJ = TJ max., linear to 80 %, VDRM = Rg - k = open 500 V/s 150 A/s TRIGGERING PARAMETER Maximum peak gate power SYMBOL TEST CONDITIONS VALUES UNITS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Anode supply = 6 V, resistive load, TJ = - 10 C Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD 60 Anode supply = 6 V, resistive load, TJ = 25 C 45 Anode supply = 6 V, resistive load, TJ = 125 C 20 Anode supply = 6 V, resistive load, TJ = - 10 C 2.5 Anode supply = 6 V, resistive load, TJ = 25 C 2.0 Anode supply = 6 V, resistive load, TJ = 125 C 1.0 TJ = 125 C, VDRM = rated value W mA V 0.25 2.0 mA UNITS SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES Typical turn-on time tgt TJ = 25 C 0.9 Typical reverse recovery time trr Typical turn-off time tq TJ = 125 C 4 s 110 Revision: 04-Jan-18 Document Number: 96414 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS08S-M3, VS-25TTS12S-M3 Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC TEST CONDITIONS VALUES UNITS -40 to +125 C DC operation 1.1 C/W Typical thermal resistance, junction to ambient (PCB mount) RthJA (1) 40 Approximate weight 2 g 0.07 oz. 25TTS08S Case style D2PAK (TO-263AB) Marking device 25TTS12S 130 Maximum Averag e On-state Power Loss (W) Maximum Allowable Case Tempera ture (C) Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 m] copper 40 C/W. For recommended footprint and soldering techniques refer to application note #AN-994 R thJC (DC) = 1.1 C/ W 120 Conduc tion Angle 110 30 60 90 100 120 180 90 0 5 10 15 25 180 120 90 60 30 20 15 RMSLimit 10 Conduc tion Angle 5 TJ= 125C 0 20 0 130 R thJC (DC) = 1.1 C/ W 120 Conduction Period 100 90 60 90 120 30 180 DC 80 0 5 10 15 20 25 Average On-sta te Current (A) Fig. 2 - Current Rating Characteristics 8 12 16 20 Fig. 3 - On-State Power Loss Characteristics Maximum Averag e On-state Power Loss (W) Maximum Allowable Case Temperature (C) Fig. 1 - Current Rating Characteristics 110 4 Avera ge On-state Current (A) Average On-sta te Current (A) 30 35 DC 180 120 90 60 30 30 25 20 RMS Limit 15 Conduction Period 10 5 T J = 125C 0 0 5 10 15 20 25 30 Avera ge On-sta te Current (A) Fig. 4 - On-State Power Loss Characteristics Revision: 04-Jan-18 Document Number: 96414 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS08S-M3, VS-25TTS12S-M3 Series 350 Vishay Semiconductors 400 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 300 Peak Half Sine Wa ve On-state Current (A) Pea k Half Sine Wave On-sta te Current (A) www.vishay.com 250 200 150 1 10 100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Cond uc tion Ma y Not Be Ma inta ined. Initia l TJ = 125C No Voltage Rea pp lied Rated VRRM Reapp lied 350 300 250 200 150 100 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ= 25C TJ= 125C 10 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Transient Thermal Imped anc e Z thJC (C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Opera tion) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Gate Characteristics Revision: 04-Jan-18 Document Number: 96414 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS08S-M3, VS-25TTS12S-M3 Series www.vishay.com Vishay Semiconductors Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 10 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Rec ommended load line for <= 30% rated d i/ dt: 10 V, 65 ohms 10 tr = 1 s, tp >= 6 s (1) (2) (3) (4) PGM = 40 W, tp = 1 ms PGM = 20 W, tp = 2 ms PGM = 8 W, tp = 5 ms PGM = 4 W, tp = 10 ms (a ) (b) VGD TJ = -10 C TJ = 125 C 1 TJ = 25 C Instantaneous Gate Voltage (V) 100 (4) IGD 0.1 0.001 (3) (2) (1) Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 25 T T S 12 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (25 = 25 A) 3 - 4 - 5 - TRL -M3 8 9 6 - Circuit configuration: T = single thyristor Package: T = D2PAK (TO-263AB) Type of silicon: S = standard recovery rectifier Voltage rating: voltage code x 100 = VRRM 7 - S = surface mountable 8 - 9 - None = tube TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free 08 = 800 V 12 = 1200 V ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-25TTS08S-M3 50 1000 Antistatic plastic tubes VS-25TTS08STRR-M3 800 800 13" diameter reel VS-25TTS08STRL-M3 800 800 13" diameter reel VS-25TTS12S-M3 50 1000 Antistatic plastic tubes VS-25TTS12STRR-M3 800 800 13" diameter reel VS-25TTS12STRL-M3 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96164 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96424 Revision: 04-Jan-18 Document Number: 96414 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC(R) outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0 to 8 MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC(R) outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000