VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 04-Jan-18 1Document Number: 96414
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Thyristor, Surface Mount, Phase Control SCR, 16 A
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Designed and qualified according
JEDEC®-JESD 47
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-25TTS...S-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
Note
•T
A = 55 °C, TJ = 125 °C, footprint 300 mm2
PRIMARY CHARACTERISTICS
IT(AV) 16 A
VDRM/VRRM 800 V, 1200 V
VTM 1.25 V
IGT 45 mA
TJ-40 to +125 °C
Package D2PAK (TO-263AB)
Circuit configuration Single SCR
Gate
2, 4
Anode
Cathode
1
3
D2PAK (TO-263AB)
1
2
3
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper 3.5 5.5
A
Aluminum IMS, RthCA = 15 °C/W 8.5 13.5
Aluminum IMS with heatsink, RthCA = 5 °C/W 16.5 25.0
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 16 A
IRMS 25
VRRM/VDRM 800 to 1200 V
ITSM 350 A
VT16 A, TJ = 25 °C 1.25 V
dV/dt 500 V/μs
dI/dt 150 A/μs
TJ-40 to +125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM,
AT 125 °C
mA
VS-25TTS08S-M3 800 800 10
VS-25TTS12S-M3 1200 1200
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 04-Jan-18 2Document Number: 96414
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum average on-state current IT(AV) TC = 93 °C, 180° conduction half sine wave 16
A
Maximum RMS on-state current IRMS 25
Maximum peak, one-cycle,
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied 300
10 ms sine pulse, no voltage reapplied 350
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 450 A2s
10 ms sine pulse, no voltage reapplied 630
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 6300 A2s
Maximum on-state voltage drop VTM 16 A, TJ = 25 °C 1.25 V
On-state slope resistance rtTJ = 125 °C 12.0 m
Threshold voltage VT(TO) 1.0 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = rated VRRM/VDRM
0.5
mA
TJ = 125 °C 10
Holding current IHVS-25TTS08,
VS-25TTS12
Anode supply = 6 V,
resistive load, initial IT = 1 A,
TJ = 25 °C
- 150
Maximum latching current ILAnode supply = 6 V, resistive load, TJ = 25 °C 200
Maximum rate of rise of off-state voltage dV/dt TJ = TJ max., linear to 80 %, VDRM = Rg - k = open 500 V/μs
Maximum rate of rise of turned-on current dI/dt 150 A/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 60
mAAnode supply = 6 V, resistive load, TJ = 25 °C 45
Anode supply = 6 V, resistive load, TJ = 125 °C 20
Maximum required DC gate voltage to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5
V
Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = rated value 0.25
Maximum DC gate current not to trigger IGD 2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
μsTypical reverse recovery time trr TJ = 125 °C 4
Typical turn-off time tq110
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 04-Jan-18 3Document Number: 96414
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm] copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -40 to +125 °C
Maximum thermal resistance,
junction to case RthJC DC operation 1.1
°C/W
Typical thermal resistance,
junction to ambient (PCB mount) RthJA (1) 40
Approximate weight 2g
0.07 oz.
Marking device Case style D2PAK (TO-263AB) 25TTS08S
25TTS12S
90
100
110
120
130
0 5 10 15 20
30° 60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Cond uc tion Angle
Average On-state Current (A)
R (DC) = 1.1 °C/ W
thJC
80
90
100
110
120
130
0 5 10 15 20 25 30
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
R (DC) = 1.1 °C/ W
thJC
0
5
10
15
20
25
048121620
RM S Li m it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
T = 125°C
J
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
T = 125°C
J
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 04-Jan-18 4Document Number: 96414
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
150
200
250
300
350
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pe a k Ha l f S
ine Wave On-sta te Current (A)
Initia l T = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
100
150
200
250
300
350
400
0.01 0.1 1
Pe a k Ha lf S
ine Wave On-state Current (A)
Pul se Tra in Du ra t io n ( s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Cond uc tion May Not Be Ma intained.
Initia l T = 125°C
No Volta ge Rea p p lied
Ra te d V Rea pp lied
RRM
J
1
10
100
1000
012345
T = 2 5 ° C
J
Insta nta neo us On-stat e Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Steady State Value
(DC Operation)
Si n g l e Pu l se
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
thJC
Transient Thermal Imp ed anc e Z (°C/W)
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 04-Jan-18 5Document Number: 96414
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-25TTS08S-M3 50 1000 Antistatic plastic tubes
VS-25TTS08STRR-M3 800 800 13" diameter reel
VS-25TTS08STRL-M3 800 800 13" diameter reel
VS-25TTS12S-M3 50 1000 Antistatic plastic tubes
VS-25TTS12STRR-M3 800 800 13" diameter reel
VS-25TTS12STRL-M3 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96164
Part marking information www.vishay.com/doc?95444
Packaging information www.vishay.com/doc?96424
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
Instantaneous Gate Current (A)
Insta nta neous Ga te Volta g e (V)
TJ = 2 5 ° C
T
J = 125 °C
b)Recommended load line for
Frequency Limited b y PG(AV)
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
TJ = - 1 0 ° C
IGD
VGD
<= 30% rat ed di/ dt: 10 V, 65 ohm s
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, t p = 1 ms
(2) PGM = 20 W, t p = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
08 = 800 V
12 = 1200 V
-
1
- Vishay Semiconductors product
2
- Current rating (25 = 25 A)
3
- Circuit configuration:
4
- Package:
5
6
- Voltage rating: voltage code x 100 = VRRM
T = single thyristor
- Type of silicon:
S = standard recovery rectifier
9
7
8
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
Device code
51 32 4 6 7 8 9
VS- 25 T T S 12 S TRL -M3
T = D2PAK (TO-263AB)
- -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
- S = surface mountable
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 13-Jul-17 1Document Number: 96164
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D2PAK
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC® outline D2PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
(3)
(3)
View A - A
(E)
(D1)
E1
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
