A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 100 mA 65 V
BVCES IC = 100 mA 65 V
BVCEO IC = 100 mA 35
BVEBO IE = 10 mA 4.0 V
ICBO VCB = 30 V 5.0 mA
hFE VCE = 5.0 V IC = 5.0 A 10 80 ---
COB VCB = 28 V f = 1.0 MHz 250 pF
PG
η
ηη
ηC VCE = 28 V POUT = 100 W f = 150 MHz 9.0
60 dB
%
NPN SILICON RF POWER TRANSISTOR
MRF317
DESCRIPTION:
The ASI MRF317 is Designed f or
Class C, 28 V High Band Applicat ions
up to 200 MHz.
FEATURES:
• Internal I nput Matching Network
• PG = 9.0 dB at 100 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 20 A
VCBO 65 V
VCEO 36 V
VCES 65 V
VEBO 4.0 V
PDISS 270 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 0.65 °C/W
PACKAGE STYLE .500 6L FLG
1 = Collector 2 = Base 3&4 = Emitter
MINIMUM
inche s / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
.220 / 5.59
.007 / 0.18
.510 / 12.95
inche s / mm
.725 / 18.42
H
DIM
K
L
I
J.970 / 24.64 .980 / 24.89
.170 / 4.32
N
M.120 / 3.05 .135 / 3.43
.150 / 3.43 .160 / 4.06
.125 / 3.18
.090 / 2.29 .105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.725/18,42
I
G
J
KL
M
A
D
C
B
2x ØN
FULL R
H
.835 / 21.21 .865 / 21.97
.210 / 5.33.200 / 5.08
1
2
3
4
