APTC90AM602G - Microsemi Corp.

APTC90AM602G

APTC90AM602G – Rev 1 October, 2012

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10 9 6

11 5

Pins 1/2/3/4 ; 5/6/7/8 ; 11/12/13/14/15/16 must be

shorted together

All ratings @ Tj = 25°C unless otherwise specified

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

Symbol Parameter Max ratings Unit

VDSS Drain - Source Breakdown Voltage 900 V

Tc = 25°C 59

ID Continuous Drain Current Tc = 80°C 44

IDM Pulsed Drain current 150

VGS Gate - Source Voltage ±20 V

RDSon Drain - Source ON Resistance 60 m

PD Maximum Power Dissipation Tc = 25°C 462 W

IAR Avalanche current (repetitive and non repetitive) 8.8 A

EAR Repetitive Avalanche Energy 2.9

EAS Single Pulse Avalanche Energy 1940 mJ

VDSS = 900V

RDSon = 60m max @ Tj = 25°C

ID = 59A @ Tc = 25°C

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 CoolMOS™

- Ultra low RDSon

- Low Miller capacitance

- Ultra low gate charge

- Avalanche energy rated

- Very rugged

 Very low stray inductance

 Kelvin source for easy drive

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Low profile

 RoHS Compliant

Phase leg

Super Junction MOSFET

Power Module

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Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 900V 200 µA

RDS(on) Drain – Source on Resistance VGS = 10V, ID = 52A 50 60 m

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 6mA 2.5 3 3.5 V

IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 200 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Ciss Input Capacitance 13.6

Coss Output Capacitance

VGS = 0V ; VDS = 100V

f = 1MHz 0.66 nF

Qg Total gate Charge 540

Qgs Gate – Source Charge 64

Qgd Gate – Drain Charge

VGS = 10V

VBus = 400V

ID = 52A 230

Td(on) Turn-on Delay Time 70

Tr Rise Time 20

Td(off) Turn-off Delay Time 400

Tf Fall Time

Inductive Switching (125°C)

VGS = 10V

VBus = 600V

ID = 52A

RG = 3.8 25

Tj = 25°C 1.5

Eoff Turn-off Switching Energy

Inductive switching

VGS =10V ; ID =52A

VBus=600V ; RG=3.8 Tj = 125°C 1.7

RthJC Junction to Case Thermal Resistance 0.27 °C/W

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tc = 25°C 59

IS Continuous Source current

(Body diode)

Tc = 80°C 44

VSD Diode Forward Voltage VGS = 0V, IS = - 52A 0.8 1.2 V

trr Reverse Recovery Time Tj = 25°C 920 ns

Qrr Reverse Recovery Charge

IS = - 52A

VR = 400V

diS/dt = 200A/µs Tj = 25°C 60 µC

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V

TJ Operating junction temperature range -40 150

TSTG Storage Temperature Range -40 125

TC Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 75 g

APTC90AM602G

APTC90AM602G – Rev 1 October, 2012

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SP2 Package outline (dimensions in mm)

Typical CoolMOS Performance Curve

ZVS

100

200

300

400

500

20 25 30 35 40 45 50

, Drain Current (A)

Frequency (kHz)

Operating Frequency vs Drain Current

=600V

D=50%

=3.8 Ω

=125°C

=75°C

Switching Energy vs Current

0.0

0.5

1.0

1.5

2.0

2.5

3.0

10 20 30 40 50 60 70 80

, Drain Current (A)

Eoff (mJ)

=600V

=3.8 Ω

=125°C

L=100µH

ON resistance vs Temperature

0.5

1.0

1.5

2.0

2.5

3.0

25 50 75 100 125 150

, Junction Temperature (°C)

DS(on)

, Drain to Source ON resistance

(Normalized)

Switching Energy vs Gate Resistance

Eoff

3691215

Gate Resistance (Ohms)

Switching Energy (mJ)

=600V

=52A

=125°C

L=100µH

APTC90AM602G

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D = 0.9

0.7

0.5

0.3

0.1

0.05 Single Pulse

0.05

0.1

0.15

0.2

0.25

0.3

0.00001 0.0001 0.001 0.01 0.1 1 10

rectangular Pulse Duration (Seconds)

Thermal Impedance (°C/W)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

120

160

200

240

0 5 10 15 20

, Drain to Source Voltage (V)

, Drain Current (A)

Low Voltage Output Characteristics

=20, 8V

25 50 75 100 125 150

, Case Temperature (°C)

, DC Drain Current (A)

DC Drain Current vs Case Temperature

900

925

950

975

1000

25 50 75 100 125

, Junction Temperature (°C)

Breakdown Voltage vs Temperature

DSS

, Drain to Source Breakdown

Voltage

Ciss

Crss

Coss

100

1000

10000

100000

0 25 50 75 100 125 150 175 200

, Drain to Source Voltage (V)

C, Capacitance (pF)

Capacitance vs Drain to Source Voltage

0 100 200 300 400 500 600

Gate Charge (nC)

, Gate to Source Voltage (V)

Gate Charge vs Gate to Source Voltage

=400V

=52A

=25°C

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon

Technologies AG”.

APTC90AM602G

APTC90AM602G – Rev 1 October, 2012

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