Die no. C-31 NPN medium power transistor These epitaxial planar NPN silicon Dimensions (Units : mm) transistors are gold doped. SST3 Features ae woe 1940.2 9.95704 * available in the following packages: | (o.95 0.5) ee SST3 (SST, SOT-23) | gay ety bo [ SMT3 (SMT, SC-59) #| i oat UMT3 (UMT, SOT-323) @) * * MPT3 (MPT, SOT-89), | i. 7 0.15 o:oqlL see page 300 Top view =9.08 * collector-to-emitter breakdown voltage, BVcEeo = 40 V (min) at (1) Emitter Ilo =1.0mA (2) Base (3) Collector * current gain specified from 0.1 mA to 500 mA * high transition frequency , typically f; = 250 MHz (min) at Ilo = 20 mA SMT3 Device types fier ) 1 t34 0,95 0.95 0.8t0.! re Part number Part marking Eo! af] ae SST3 |SST2222A RIP | 2) 2 . (SOT-23) |{SST4401 R2X ory oT i - 3 SMT3. |MMST2222A RIP || wes wis Seal (SC-59) MMST4401 R2X TOP VIEW | [0.4 "So, Each lead has same dimensions sor-s23) |OMTaaor | Rox ris - ane A MPT3 : RXT2222A cB O CI (2) Base (SOT-89} 4 Ey + (3) Collector 095 | 0.95 Applications * general purpose, medium power, switching and amplifier transistor Surface Mount Transistors ROM 349C-31 Transistors (US/European) NPN UMT3 MPT3 2 ot0.2 = 0.2 ri. 380, \ 0.90.1 Z _ 4st oci Le 15t2-2 0. c 0.65 0.2 ]0.7#0.1 5 ; [ee (D _ xn [nv aa! at L a) o~0.1 S| Tid co dimensions i | i | ips % Osos. at0.110-520.1 flip ato 0.3260 0.150.085 | $20.1 1520.7 TOP VIEW 3.00.2 oc (1) Emitter (1) Base 16 (2) Base (2) Collector | (3) Collector (3) Emitter 0.65 0.65 Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Collector-to-base voltage Voso 50 Vv Collector-to-emitter voltage | Voeo 40 Vv Emitter-to-base voltage Veso 6 V Collector current Ic 800 mA |DC SST3 (SOT-23) 200 Power |SMIS(SC59) |p 200 W |For derat derati followin ng m or derating, see derating curve followi dissipation |mT3 (SoT-323)| 200 9 8 9 MPT3 (SOT-89) 500 Junction temperature T; 55 ~ +150 C 350 ROoHM Surface Mount TransistorsTransistors (US/European) NPN C-31 Electrical characteristics (unless otherwise noted T, = 25C) Parameter Symbo!| Min |Typical| Max Unit Conditions Collector-to-base _ breakdown voltage BVcpo | 50 Vi jie =50 HA Collector-to-emitter _ breakdown voltage BVceo | 40 Vi |ic= 1.0 mA Emitter-to-base _ breakdown voltage BVEBO 6 Vo fle = 10 HA Collector cutoff current IcBo 50 nA |Voeg =60V Emitter cutoff current leBo 50 nA |Veg=4V 50 200 I = 100 WA, Vog = 10 V 50 230 lo = 1.0 mA, Vee =10V DC current gain hee 50 240 Ic = 10 mA, Voge = 10 V 50 210 Ic = 100 mA, VoE= 10V 30 180 le = 500 mA, Vee =10V Collector-to-emitter V 0.1 0.4 y__ [leta= 100 mA/10 mA saturation voltage CE(sat) 03 0.6 Ic/Ig = 500 MA/SO mA Base-to-emitter saturation | \, 0.95 V Ic/lg = 100 mA/10 mA voltage BE(sat) 12 Io/Ip = 500 mMA/S0 mA AC current gain Ne 40 Io = 10 MA, Vo_g = 10 V, f= 1 kHz Collector output _ = f= capacitance Cob 7 PF 1Vog =5.0V, le = 0, f= 1 MHz Collector input _ ante capacitance Cib 25 pF Veg = 5.0 V, Ic =9, f=1 MHz Transition frequency fr 200 MHz |l=20 mA, Veg = 10 V, f = 100 MHz og lq = 100 HA, Voge = 10 V, Noise figure NF 2 3 dB Fig = 10 kQ, f= 1 KHz cg Ig = 150 mA, Ig, = 15 mA, Rise time t 15 ns Voc = 30 V : le = 150 mA, Ip4 =15mA, Delay time ty 20 ns Voo = 30V : Ic = 150 mA, ley =15 mA, Turn on time ton 35 ns Voo = 30 V Storage time ts 225 ns {I> = 150 mA, Ip; =Igo = 15 MA Fail time ty 30 ns {Ig = 150 MA, Ig; =Ipo= 15 mA Note: Minus sign for PNP transistor is omitted Surface Mount Transistors ROM 351C-31 Transistors (US/European) NPN Electrical characteristic curves a=25C Ie-COLLECTOR CURRENT (mA) Ip=O KA 0 5 10 Vce-COLLECTOR-EMITTER VOLTAGE (V) .0 iO 100 ogo Voce (sat) COLLECTOR EMITTER SATURATION VOLTAGE(V) Ic-COLLECTOR CURRENT (mA) Figure 1 Figure 2 1000 z < oe e f& 100 3 8 ly = 10 0.1 1.0 10 100 1000 Ie-COLLECTOR CURRENT (mA) Figure 3 1000 z < oO 5 z 100 3 Oo i xc 0.1 1.0 10 (00 1000 Ic-COLLECTOR CURRENT (mA) Figure 4 352 RONM Surface Mount TransistorsTransistors (US/European) NPN C-31 Ta= 25C Vee = 10V f= |kHz hfe-AC CURRENT GAIN 0.1 1.0 10 100 1000 te-COLLECTOR CURRENT (mA) Figure 5 Ta=25C Vce= 10V o o Qo oS VeeconyBASE EMITTER VOLTAGE () o = Vee (sat) BASE EMITTER SATURATION VOLTAGE (V) 1.0 0 100 1000 | 10 ico (000 Ic-COLLECTOR CURRENT (mA) Ip-COLLECTOR CURRENT (mA) Figure 6 Figure 7 Ta=25C Ie/lg= 10 gz z, tas = wi F F g' y z = = - 5 J 4 1.0 to 100 1000 1.0 10 100 1000 Ie-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) Figure 8 Figure 9 Surface Mount Transistors ROM 353C-31 Transistors (US/European) NPN 1000 a 3 w 2 w - \ = \ WwW ad 3 i < 5 t a = oe ! 1.0 10 100 1000 1.0 Ig-COLLECTOR CURRENT (mA) Figure 10 100 Ta=25C 100 f= IMHz S ul og < E c 3 > | ww ti Ww 2 | E < = E 2 a 3 & 5 | 4 a 8 8 > o 0.1 1.0 10 ' 1 REVERSE BIAS VOLTAGE (V) Figure 12 120 z Ta=25C Voe = 10V $s = = 100 8 g 8 & S$ a 80 & % = a oa = | is 60 a = = a 40 z j g 2, 8 20 a ait 0 1.0 10 100 1000 Ie-COLLECTOR CURRENT (mA) Figure 14 10 100 1000 Ic-COLLECTOR CURRENT (mA) Figure 11 Ta=25C QOMHz ~250MHz 300MHz 250MHz 10 100 ta00 Ip-COLLECTOR CURRENT (mA) Figure 13 0 25 50 75 (00 (25 150 Ta AMBIENT TEMPERATURE (C) Figure 15 354 Surface Mount Transistors