EMIF02-MIC03C2 2 line EMI filter and ESD protection Main product characteristics Where EMI filtering in ESD sensitive equipment is required: ) s ( t c Description u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) Benefits o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Mobile phones and communication systems Computers and printers and MCU Boards The EMIF02-MIC03C2 is a highly integrated device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. The Flip-Chip packaging means the package size is equal to the die size. This filter includes ESD protection circuitry, which prevents damage to the application when it is subjected to ESD surges up to 15 kV. EMI symmetrical (I/O) low-pass filter High efficiency EMI filter (-35 dB @ 900 MHz) Very low PCB space consumption: 1.07 mm x 1.47 mm Very thin package: 0.695 mm Coating resin on back side and lead free package High efficiency in ESD suppression High reliability offered by monolithic integration High reduction of parasitic elements through integration and wafer level packaging. Coated Flip-Chip package (about 20 times real size) Pin configuration (Bump side) 3 2 1 I2 I1 B GND O2 A O1 C Complies with following standards: IEC 61000-4-2 level 4 input pins level 1 output pins 15 kV (air discharge) 8 kV (contact discharge 2 kV (air discharge) 2 kV (contact discharge MIL STD 883G - Method 3015-7 Class 3 November 2006 Rev 1 1/7 www.st.com Characteristics 1 EMIF02-MIC03C2 Characteristics Figure 1. Basic cell configuration Low-pass Filter Input Output Ri/o = 68 Cline = 100 pF ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O GND Table 1. GND GND Absolute ratings (limiting values) Symbol Parameter Value Unit Tj Maximum junction temperature 125 C Top Operating temperature range -40 to +85 C Tstg Storage temperature range -55 to +150 C Table 2. Electrical characteristics (Tamb = 25 C) Symbol Parameters I VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between input and output Cline Input capacitance per line IPP Symbol 2/7 Test conditions IR IRM VCL VBR VRM IRM IR V VRM VBR VCL IPP Min Typ 6 8 Max Unit VBR IR = 1 mA IRM VRM = 3 V per line RI/O Tolerance 68 Cline VR = 0 V 100 pF V 500 nA EMIF02-MIC03C2 Figure 2. Characteristics S21 (dB) attenuation measurement Figure 3. 0.00 Analog crosstalk measurement dB dB 0.00 -5.00 -10.00 -10.00 -20.00 -15.00 -20.00 -30.00 -25.00 -40.00 -30.00 -50.00 -35.00 -60.00 -40.00 -70.00 -45.00 F (Hz) F (Hz) -50.00 100.0k 1.0M 10.0M 100.0M -80.00 100.0k 1.0G 1.0M 10.0M 100.0M 1.0G ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Figure 4. ESD response to IEC 61000-4-2 (+15 kV air discharge) on one input Vin and one output Vout Figure 6. Line capacitance versus applied voltage Figure 5. ESD response to IEC 61000-4-2 (- 15 kV air discharge) on one input Vin and one output Vout C(pF) 140 120 F=1MHz Vosc=30mVRMS Tj=25C 100 80 60 40 20 VR(V) 0 0 1 2 3 4 5 3/7 Characteristics EMIF02-MIC03C2 Figure 7. IN1 Aplac model Rbump Lbump Rmic Lmic Lbump Rbump GND OUT1 Lsub model = D1 model = D2 Rsub Rbump GND model = D3 Lbump model = D1 model = D2 Lgnd ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Cgnd IN2 OUT2 Rbump Lbump Rmic Lmic Ground return EMIF02-MIC03C2 model Figure 8. 4/7 Rgnd Lbump Rbump Aplac parameters Model D1 Model D3 Model D2 aplacvar Rmic 68 CJO=Cdiode1 CJO=Cdiode3 CJO=Cdiode2 aplacvar Lmic 10p BV=7 BV=7 BV=7 aplacvar Cdiode1 100pF IBV=1u IBV=1u IBV=1u aplacvar Cdiode2 3.6pF IKF=1000 IKF=1000 IKF=1000 aplacvar Cdiode3 1.17nF IS=10f IS=10f IS=10f aplacvar Lbump 50pH ISR=100p ISR=100p ISR=100p aplacvar Rbump 20m N=1 N=1 N=1 aplacvar Rsub 0.5m M=0.3333 M=0.3333 M=0.3333 aplacvar Rgnd 10m RS=0.7 RS=0.12 RS=0.3 aplacvar Lgnd 50pH VJ=0.6 VJ=0.6 VJ=0.6 aplacvar Cgnd 0.15pF TT=50n TT=50n TT=50n aplacvar Lsub 10pH EMIF02-MIC03C2 2 Ordering information scheme Ordering information scheme EMIF yy - xxx zz Cx EMI Filter Number of lines Information 3 letters = application 2 digits = version ) s ( t c u d o ) r s ( P 3 Package information t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O x x z Package C = Coated Flip-Chip x = 2: Leadfree Pitch = 500 m, Bump = 315 m Figure 9. Flip-Chip Dimensions 500 m 10 315 m 50 695 m 50 50 0 m 15 1.47 mm 50 m 250 m 10 1.07 mm 50 m Figure 10. Marking Dot, ST logo xx = marking z = manufacturing location yww = datecode (y = year ww = week) Figure 11. Footprint recommendation Copper pad Diameter: 250m recommended, 300 m max E Solder stencil opening: 330 m y ww Solder mask opening recommendation: 340 m min for 315 m copper pad diameter 5/7 Ordering information EMIF02-MIC03C2 Figure 12. Flip-Chip tape and reel specification Dot identifying Pin A1 location O 1.5 0.1 1.75 0.1 ST E ST E ST E xxz yww xxz yww xxz yww 3.5 0.1 8 0.3 4 0.1 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c 4 Ordering information u O d o ) r s P ( t c e t u e l d o o r s P b O5 e history Revision t e l o s b O 0.73 0.05 4 0.1 User direction of unreeling All dimensions in mm In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/7 Ordering code Marking Package Weight Base qty Delivery mode EMIF02-MIC03C2 FW Flip-Chip 2.3 mg 5000 7" Tape and reel Date Revision 28-Nov-2006 1 Changes Initial release. EMIF02-MIC03C2 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7