SFH615AA/AGB/AGR/ABM/ABL/AY/AB 5.3 kV TRIOS" Optocoupler High Reliability FEATURES * Variety of Current Transfer Ratios at 5.0 mA - AA: 50-600% - AGB: 100-600% - AGR: 100-300% - ABM: 200-400% - ABL: 200-600% - AY: 50-150% - AB: 80-260% * Low CTR Degradation * Good CTR Linearity Depending on Forward Current * Isolation Test Voltage, 5300 VRMS * High Collector-emitter Voltage, VCEO=70 V * Low Saturation Voltage * Fast Switching Times * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Temperature Stable * Low Coupling Capacitance * End-Stackable, .100" (2.54 mm) Spacing * High Common-mode Interference Immunity (Unconnected Base) * Underwriters Lab File #52744 V * VDE 0884 Available with Option 1 D E DESCRIPTION The SFH615XXX features a large assortment of current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of >8 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Document Number: 83672 Revision 17-August-01 Dimensions in inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) Anode 1 4 Collector Cathode 2 3 3 Emitter 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) 3-9 .008 (.20) .012 (.30) .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) 0.100 (2.54) Maximum Ratings Emitter Reverse Voltage ................................................................................6.0 V DC Forward Current ........................................................................60 mA Surge Forward Current (tP10 s) ....................................................2.5 A Total Power Dissipation ................................................................100 mW Detector Collector-Emitter Voltage....................................................................70 V Emitter-Collector Voltage...................................................................7.0 V Collector Current.............................................................................50 mA Collector Current (tP1.0 ms)........................................................100 mA Total Power Dissipation ................................................................150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74 ......................................................................5300 VRMS Creepage ................................................................................... 7.0 mm Clearance................................................................................... 7.0 mm Insulation Thickness between Emitter and Detector.................. 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1............................................... 175 Isolation Resistance VIO=500 V, TA=25C ................................................................ 1012 VIO=500 V, TA=100C .............................................................. 1011 Storage Temperature Range..............................................-55 to +150C Ambient Temperature Range .............................................-55 to +100C Junction Temperature ..................................................................... 100C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane 1.5 mm) ........................................... 260C www.vishay.com 2-239 Table 1. Characteristics (TA=25C) Parameter Symbol Value Unit Condition Forward Voltage VF 1.25(1.65) V IF=60 mA Reverse Current IR 0.01(10) A VR=6.0 V Capacitance C0 13 pF VR=0 V, f=1.0 MHz Thermal Resistance RthJA 750 K/W -- Capacitance CCE 5.2 pF VCE=5 V, f=1.0 MHz Thermal Resistance RthJA 500 K/W -- Collector-Emitter Saturation Voltage VCEsat 0.25(0.4) V IF=10 mA, IC=2.5 mA Coupling Capacitance CC 0.4 pF -- Emitter (IR GaAs) Detector (Si Phototransistor) Package Table 2. Current Transfer Ratio (IC/IF at VCE=5.0 V) and Collector-emitter Leakage Current Parameter AA AGB AGR ABM ABL AY AB Unit IC/ IF (IF=5.0 mA) 50-600 100-600 100-300 200-400 200-600 50-150 80-260 % Collector-Emitter Leakage Current, ICEO, VCEO=10 V 10(100) 10(100) 10(100) 10(100) 10(100) 10(100) 10(100) nA Switching Operation (with saturation) IF 1 k VCC=5 V Parameter Symbol Value Unit Condition Turn-on Time ton 2.0 s IF=5.0 mA Turn-off Time toff 25 s 47 Document Number: 83672 Revision 17-August-01 www.vishay.com 2-240 Figure 1. Current Transfer Ratio (typical) vs. Temperature IF=10 mA, VCE=0.5 V Figure 4. Output Characteristics (typical). Collector Current vs. Collector-emitter Voltage TA=25C Figure 6. Diode Forward Voltage (typical) vs. Forward Current Figure 2. Transistor Capacitance (typical) vs. Collector-emitter Voltage TA=25C, f=1.0 MHz Figure 5. Permissible Pulse Handling Capability. Forward Current vs. Pulsewidth Pulse cycle D=parameter, TA=25C Figure 7. Permissible Power Dissipation vs. Ambient Temperature 20 pF C 15 10 5 CCE 0 10-2 10-1 10-0 101 V Ve 102 Figure 3. Permissible Diode Forward Current vs. Ambient Temperature Document Number: 83672 Revision 17-August-01 www.vishay.com 2-241