Features
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Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
FPD7612
GENERAL PURPOSE pHEMT
The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (pHEMT), featuring a 0.25mx200m Schottky barrier gate,
defined by high-resolution stepper-based photolithography. The recessed
gate structure minimizes parasitics to optimize performance. The epitaxial
structure and processing have been optimized for reliable high-power
applications.
A1
20.5dBm Output P1dB
13dB Power Gain at 12GHz
17dB Maximum Stable Gain
at 12GHz
11dB Maximum Stable Gain
at 18GHz
45% Power-Added Efficiency
Applications
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
Medium-Haul Digital Radio
Transmitters
DS100601
Package Style: Bare Die
FPD7612Gen-
eral Purpose
pHEMT
Parameter Specification Unit Condition
Min. Typ. Max.
Electrical Specifications
P1dB Gain Compression 19 20.5 dBm VDS=5V, IDS =50% IDSS
Small Signal Gain 11.0 13.0 dB VDS=5V, IDS =50% IDSS
Noise Figure 1.2 dB VDS=5V, IDS =50% IDSS
Power-Added Efficiency (PAE) 45 % VDS=5V, IDS =50% IDSS, POUT=P1dB
Maximum Stable Gain (S21/S12) 16 17 dB VDS=5V, IDS=50% IDSS, f=12GHz
9.5 11 dB VDS=5V, IDS=50% IDSS, f=24GHz
Saturated Drain-Source Current (IDSS)456075mAV
DS=1.3V, VGS =0V
Maximum Drain-Source Current
(IMAX)120 mA VDS =1.3V, VGS +1V
Transconductance (GM)80msV
DS=1.3V, VGS =0V
Gate-Source Leakage Current (IGSO)110AV
GS=-5V
Pinch-Off Voltage (VP) |0.7| |1.0| |1.3| V VDS= 1.3V, IDS=0.2mA
Gate-Source Breakdown Voltage
(VBDGS)|12.0| |14.0| V IGS=0.2mA
Gate-Drain Breakdown Voltage
(VBDGD)|14.5| |16.0| V IGD =0.2mA
Thermal Resistivity (JC) 280 C/W VDS >3V
Thermal Resistivity (JC) 20 C/W VDS>6V
Note: TAMBIENT=22°C, RF specifications measured at f=12 GHz using CW signal.
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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FPD7612
Pad Layout
Note: Coordinates are referenced from the bottom left hand
corner of the die to the center of the bond pad opening.
Absolute Maximum Ratings1
Parameter Rating Unit
Drain-Source Voltage (VDS)
(-3V<VGS <-0.5V)2
8V
Gate-Source Voltage (VGS)
(0V<VDS <+8V)
-3 V
Drain-Source Current (IDS)
(For VDS<2V)
IDSS
Gate Current (IG)
(Forward or reverse current)
10 mA
RF Input Power (PIN)
(Under any acceptable bias state)
20 dBm
Channel Operating Temperature (TCH)
(Under any acceptable bias state)
175 °C
Storage Temperature (TSTG)
(Non-Operating Storage)
-65 to 150 °C
Total Power Dissipation (PTOT)3, 4, 5 0.5 W
Gain Compression
(Under any bias conditions) 5dB
Simultaneous Combination of Limits6
(2 or more max. limits)
80 %
Notes:
1TAMBIENT =22°C unless otherwise noted; exceeding any one of these absolute max-
imum ratings may cause permanent damage to the device.
2Operating at absolute maximum VD continuously is not recommended. If operation
at 8V is considered then IDS must be reduced in order to keep the part within its
thermal power dissipation limits. Therefore VGS is restricted to <-0.5V.
3Total Power Dissipation to be de-rated as follows above 22°C: PTOT =0.5-
(0.0036W/°C) x THS, where THS =heatsink or ambient temperature above 22°C.
Example: For a 85°C carrier temperature: PTOT =0.5-(0.0036 x (85-22))=0.27W
4Total Power Dissipation (PTOT) defined as (PDC +PIN)–POUT, where PDC: DC Bias
Power, PIN: RF Input Power, POUT: RF Output Power.
5Users should avoid exceeding 80% of 2 or more Limits simultaneously.
6Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Au-
plated copper heatsink or rib.
Pad Description Pin Coordinates (m)
A1 Gate Pad 190, 120
A2 Gate Pad 330, 120
B1 Drain Pad 200, 240
B2 Drain Pad 320, 240
CSource Pad
Die Size (m) Die Thickness (m) Min. Bond Pad Opening (mxm)
520x335 75 48x50
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
A1
BB
A
1
A
2
C
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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FPD7612
Typical Measured Performance
Noise Parameters (Biased at VDS=3.0V, IDS =27mA)
Freq N.F.min Rn/50 Gamma Opt.
GHz dB Mag. Angle
2.00 0.31 0.28 0.78 9.63
3.00 0.39 0.28 0.70 18.43
4.00 0.44 0.26 0.74 28.57
5.00 0.54 0.24 0.61 35.40
6.00 0.65 0.23 0.63 44.37
7.00 0.75 0.23 0.54 51.10
8.00 0.90 0.22 0.49 58.43
9.00 1.07 0.21 0.44 68.47
10.00 1.08 0.20 0.43 73.30
11.00 1.09 0.20 0.44 80.63
12.00 1.28 0.20 0.38 92.87
13.00 1.55 0.19 0.34 104.10
14.00 1.66 0.17 0.32 111.83
15.00 1.60 0.15 0.30 120.60
16.00 1.72 0.15 0.32 124.47
17.00 1.83 0.14 0.28 144.77
18.00 1.90 0.13 0.20 158.23
Associated Gain and N. F.min vs Frequency
Biased @ 5V, 27mA
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10 .0
11.0
12.0
13.0
14 .0
15.0
16 .0
17 .0
18.0
Frequency (GHz)
Associated Gain
(dB)
0
0. 5
1
1. 5
2
2. 5
3
3. 5
N.F. min (d B)
Gain (dB)
N.F.min
Associated Gain and N.F.min vs Frequency
Biased @ 3V, 27mA
8.0
10 .0
12 .0
14 .0
16 .0
18 .0
20 .0
22 .0
2. 0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11 . 0
12 . 0
13.0
14.0
15.0
16.0
17 . 0
18 . 0
Frequency (GHz)
Associated Gain
(dB)
0
0. 5
1
1. 5
2
2. 5
3
3. 5
N. F.min (dB )
Ga i n (d B)
N.F.min
4 of 4 DS100601
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FPD7612
Preferred Assembly Instructions
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible.
The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be
applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and
ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended. For manual dis-
pense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an
oven especially set aside for epoxy curing only. If possible, the curing oven should be flushed with dry nitrogen. The gold-tin
(80% Au 20% Sn) eutectic die attach has a melting point of approximately 280°C but the absolute temperature being used
depends on the leadframe material used and the particular application. The maximum time should be kept to a minimum.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4mm diameter
gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter
wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependant on the
setup and application being used. Ultrasonic or thermosonic bonding is not recommended.
Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires
should be minimized especially when making RF or ground connections.
Handling Precautions
To avoid damage to the devices, care should be exercised during handling. Proper Electro-
static Discharge (ESD) precautions should be observed at all stages of storage, handling,
assembly, and testing.
ESD/MSL Rating
These devices should be treated as Class 0 (0V to 250V) as defined in JEDEC Standard No. 22-A114. Further information on
ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
Application Notes and Design Data
Application Notes and design data including S-parameters, noise parameters, and device model are available on request and
from www.rfmd.com.
Disclaimers
This product is not designed for use in any space-based or life-sustaining/supporting equipment.
Ordering Information
Delivery Quantity Ordering Code
Full Pack (100) FPD7612-000
Small Quantity (25) FPD7612-000SQ
Sample Quantity (3) FPD7612-000S3
