FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25mx200m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. Optimum Technology Matching(R) Applied 20.5dBm Output P1dB 13dB Power Gain at 12GHz 17dB Maximum Stable Gain at 12GHz 11dB Maximum Stable Gain at 18GHz 45% Power-Added Efficiency Applications GaAs HBT GaAs MESFET A1 InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT Narrowband and Broadband High-Performance Amplifiers SATCOM Uplink Transmitters PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers Medium-Haul Digital Radio Transmitters InP HBT RF MEMS LDMOS Parameter Min. Specification Typ. Max. Unit Condition Electrical Specifications P1dB Gain Compression Small Signal Gain Noise Figure Power-Added Efficiency (PAE) Maximum Stable Gain (S21/S12) 19 11.0 16 9.5 Saturated Drain-Source Current (IDSS) Maximum Drain-Source Current (IMAX) Transconductance (GM) Gate-Source Leakage Current (IGSO) Pinch-Off Voltage (VP) Gate-Source Breakdown Voltage (VBDGS) Gate-Drain Breakdown Voltage (VBDGD) Thermal Resistivity (JC) Thermal Resistivity (JC) 45 20.5 13.0 1.2 45 17 11 60 120 dBm dB dB % dB dB 75 mA mA VDS =5V, IDS =50% IDSS VDS =5V, IDS =50% IDSS VDS =5V, IDS =50% IDSS VDS =5V, IDS =50% IDSS, POUT =P1dB VDS =5V, IDS =50% IDSS, f=12GHz VDS =5V, IDS =50% IDSS, f=24GHz VDS =1.3V, VGS =0V VDS =1.3V, VGS +1V ms A V V VDS =1.3V, VGS =0V VGS =-5V VDS =1.3V, IDS =0.2mA IGS =0.2mA |0.7| |12.0| 80 1 |1.0| |14.0| |14.5| |16.0| V 280 20 C/W C/W 10 |1.3| IGD =0.2mA VDS >3V VDS >6V Note: TAMBIENT =22C, RF specifications measured at f=12GHz using CW signal. RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS100601 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 4 FPD7612 Absolute Maximum Ratings1 Rating Unit Drain-Source Voltage (VDS) (-3V<VGS <-0.5V)2 Parameter 8 V Gate-Source Voltage (VGS) (0V<VDS <+8V) -3 V Drain-Source Current (IDS) (For VDS <2V) IDSS Gate Current (IG) (Forward or reverse current) 10 mA RF Input Power (PIN) (Under any acceptable bias state) 20 dBm Channel Operating Temperature (TCH) (Under any acceptable bias state) 175 C -65 to 150 C 0.5 W Gain Compression (Under any bias conditions) 5 dB Simultaneous Combination of Limits6 (2 or more max. limits) 80 % Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). Storage Temperature (TSTG) (Non-Operating Storage) Total Power Dissipation (PTOT)3, 4, 5 The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Notes: 1T AMBIENT =22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device. 2 Operating at absolute maximum VD continuously is not recommended. If operation at 8V is considered then IDS must be reduced in order to keep the part within its thermal power dissipation limits. Therefore VGS is restricted to <-0.5V. 3Total Power Dissipation to be de-rated as follows above 22C: P TOT =0.5(0.0036W/C)xTHS, where THS =heatsink or ambient temperature above 22C. Example: For a 85C carrier temperature: PTOT =0.5-(0.0036x(85-22))=0.27W 4 Total Power Dissipation (PTOT) defined as (PDC +PIN)-POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power. 5 Users should avoid exceeding 80% of 2 or more Limits simultaneously. 6Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Auplated copper heatsink or rib. Pad Layout B A1 C 2 of 4 A 1 Pad A1 A2 B1 B2 C B A 2 Description Gate Pad Gate Pad Drain Pad Drain Pad Source Pad Pin Coordinates (m) 190, 120 330, 120 200, 240 320, 240 Note: Coordinates are referenced from the bottom left hand corner of the die to the center of the bond pad opening. Die Size (m) Die Thickness (m) Min. Bond Pad Opening (mxm) 520x335 75 48x50 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS100601 FPD7612 Typical Measured Performance Associated Gain and N.F.min vs Frequency Biased @ 3V, 27mA 22.0 3 20.0 18.0 17.0 16.0 Frequency (GHz) 15.0 0 14.0 Frequency (GHz ) 0.5 8.0 13.0 1 8.0 17 .0 16 .0 15.0 14 .0 1 3.0 12.0 1 1.0 9.0 10 .0 8.0 7.0 6 .0 5 .0 4.0 3.0 0 2.0 8.0 1 10.0 12.0 0.5 11.0 10.0 1.5 12.0 9.0 1 10.0 12.0 2 14.0 8.0 1.5 7.0 14.0 2.5 16.0 6.0 2 5.0 16.0 3 18.0 4.0 2.5 3.0 18.0 3.5 Gain (dB) N.F.min 2.0 Associated Gain (dB) 3.5 Associated Gain (dB) Gain (dB) N.F.min 20.0 N.F.min (dB) 22.0 N.F.min (dB) Associated Gain and N.F.min vs Frequency Biased @ 5V, 27mA Noise Parameters (Biased at VDS =3.0V, IDS =27mA) Freq N.F.min Rn/50 Gamma Opt. GHz dB Mag. Angle 2.00 0.31 0.28 0.78 9.63 3.00 0.39 0.28 0.70 18.43 4.00 0.44 0.26 0.74 28.57 5.00 0.54 0.24 0.61 35.40 6.00 0.65 0.23 0.63 44.37 7.00 0.75 0.23 0.54 51.10 8.00 0.90 0.22 0.49 58.43 9.00 1.07 0.21 0.44 68.47 10.00 1.08 0.20 0.43 73.30 11.00 1.09 0.20 0.44 80.63 12.00 1.28 0.20 0.38 92.87 13.00 1.55 0.19 0.34 104.10 14.00 1.66 0.17 0.32 111.83 15.00 1.60 0.15 0.30 120.60 16.00 1.72 0.15 0.32 124.47 17.00 1.83 0.14 0.28 144.77 18.00 1.90 0.13 0.20 158.23 DS100601 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 4 FPD7612 Preferred Assembly Instructions GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended. For manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for 1 hour in an oven especially set aside for epoxy curing only. If possible, the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au 20% Sn) eutectic die attach has a melting point of approximately 280C but the absolute temperature being used depends on the leadframe material used and the particular application. The maximum time should be kept to a minimum. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4mm diameter gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependant on the setup and application being used. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially when making RF or ground connections. Handling Precautions To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. ESD/MSL Rating These devices should be treated as Class 0 (0V to 250V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. Application Notes and Design Data Application Notes and design data including S-parameters, noise parameters, and device model are available on request and from www.rfmd.com. Disclaimers This product is not designed for use in any space-based or life-sustaining/supporting equipment. Ordering Information 4 of 4 Delivery Quantity Ordering Code Full Pack (100) FPD7612-000 Small Quantity (25) FPD7612-000SQ Sample Quantity (3) FPD7612-000S3 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS100601