Equivalent Circuit C Features * Medium Power Linear Switching Applications * Complementary to TIP125 / TIP126 / TIP127 B R1 TO-220 1 1.Base 2.Collector 3.Emitter R2 R1 8k R2 0.12k E Ordering Information Part Number Top Mark Package Packing Method TIP120 TIP120 TO-220 3L (Single Gauge) Bulk TIP120TU TIP120 TO-220 3L (Single Gauge) Rail TIP121 TIP121 TO-220 3L (Single Gauge) Bulk TIP121TU TIP121 TO-220 3L (Single Gauge) Rail TIP122 TIP122 TO-220 3L (Single Gauge) Bulk TIP122TU TIP122 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage Value TIP120 60 TIP121 80 TIP122 100 TIP120 60 TIP121 80 TIP122 100 Unit V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 8 A IB Base Current (DC) 120 mA TJ Junction Temperature 150 C -65 to 150 C TSTG Storage Temperature Range (c) 2001 Semiconductor Components Industries, LLC. November-2017, Rev.2 Publication Order Number: TIP122/D TIP120 / TIP121 / TIP122 -- NPN Epitaxial Darlington Transistor TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Values are at TC = 25C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TA = 25C) 2 Collector Dissipation (TC = 25C) 65 Unit W Electrical Characteristics Values are at TC = 25C unless otherwise noted. Symbol Parameter Conditions VCEO(sus) ICEO Collector-Emitter Sustaining TIP121 Voltage TIP122 Collector Cut-Off Current ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain(1) Max. IC = 100 mA, IB = 0 Unit 80 V 100 TIP120 VCE = 30 V, IB = 0 0.5 TIP121 VCE = 40 V, IB = 0 0.5 TIP122 VCE = 50 V, IB = 0 0.5 TIP120 VCB = 60 V, IE = 0 0.2 TIP121 VCB = 80 V, IE = 0 0.2 TIP122 VCB = 100 V, IE = 0 0.2 VEB = 5 V, IC = 0 2 VCE = 3 V, IC = 0.5 A 1000 VCE = 3 V, IC = 3 A 1000 mA mA mA IC = 3 A, IB = 12 mA 2.0 IC = 5 A, IB = 20 mA 4.0 Base-Emitter On Voltage(1) VCE = 3 V, IC = 3 A 2.5 V Output Capacitance VCB = 10 V, IE = 0, f = 0.1 MHz 200 pF VCE(sat) Collector-Emitter Saturation Voltage(1) VBE(on) Cob Min. 60 TIP120 Note: 1. Pulse test: pw 300 s, duty cycle 2%. www.onsemi.com 2 V TIP120 / TIP121 / TIP122 -- NPN Epitaxial Darlington Transistor Thermal Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10000 hFE, DC CURRENT GAIN VCE = 4V 1000 100 0.1 1 3.5 IC = 250IB 3.0 2.5 2.0 VBE(sat) 1.5 1.0 VCE(sat) 0.5 0.1 10 IC[A], COLLECTOR CURRENT 1 10 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 1000 10 s 0 10 s 0 50 IC[A], COLLECTOR CURRENT Cib 10 0.1 1 10 100 1 0.1 PC[W], POWER DISSIPATION 60 50 40 30 20 10 0 100 125 150 100 Figure 4. Safe Operating Area 70 75 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 80 50 TIP122 1 Figure 3. Output and Input Capacitance vs. Reverse Voltage 25 TIP120 TIP121 0.01 VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE 0 s 5m Cob s 1m 100 DC Cob[pF] Cib[pF], CAPACITANCE f=0.1MHz 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating www.onsemi.com 3 TIP120 / TIP121 / TIP122 -- NPN Epitaxial Darlington Transistor Typical Performance Characteristics TIP120 / TIP121 / TIP122 -- NPN Epitaxial Darlington Transistor Physical Dimensions Figure 6. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB www.onsemi.com 4 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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