BYV32EB-200 Dual ultrafast power diode Rev.01 - 20 September 2018 Product data sheet 1. General description Dual ultrafast power diode in a SOT404 (D2PAK) surface-mountable plastic package. 2. Features and benefits * * * * * * High reverse voltage surge capability High thermal cycling performance Low thermal resistance Very low on-state loss Soft recovery characteristic minimizes power consuming oscillations Surface-mountable package 3. Applications * Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating VRRM repetitive peak reverse voltage 200 V IO(AV) average output current = 0.5; square-wave pulse; Tmb 115 C; both diodes conducting; Fig. 1; Fig. 2 20 A IRRM repetitive peak reverse current = 0.001; tp = 2 s; 0.2 A VESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 k; all pins 8 kV Static characteristics VF forward voltage IF = 8 A; Tj = 150 C; Fig. 4 - 0.72 0.85 V IF = 20 A; Tj = 25 C - 1 1.15 V IF = 1 A; VR = 30 V; dIF/dt = 100 A/s; Tj = 25 C; ramp recovery; Fig. 5 - 20 25 ns Dynamic characteristics trr reverse recovery time BYV32EB-200 WeEn Semiconductors Dual ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 A1 anode 1 2 K cathode [1] 3 A2 anode 2 mb K mounting base; cathode Graphic symbol A1 A2 K sym125 TO-263 (D2PAK) [1] it is not possible to make a connection to pin 2 of the SOT404 package 6. Ordering information Table 3. Ordering information Type number Package BYV32EB-200 Name Description Version D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 7. Marking Table 4. Marking codes Type number Marking codes BYV32EB-200 BYV32EB-200 BYV32EB-200 Product data sheet All information provided in this document is subject to legal disclaimers. 20 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 10 BYV32EB-200 WeEn Semiconductors Dual ultrafast power diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Values Unit repetitive peak reverse voltage 200 V VRWM crest working reverse voltage 200 V VR reverse voltage DC 200 V IO(AV) average output current = 0.5; square-wave pulse; Tmb 115 C; both diodes conducting; Fig 1; Fig 2 20 A IFRM repetitive peak forward current = 0.5; tp = 25 s; Tmb 115 C; per diode 20 A IFSM non-repetitive peak forward current tp = 10 ms; sine-wave pulse; Tj(init) = 25 C; per diode 125 A tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 C; per diode 137 A IRRM repetitive peak reverse current = 0.001; tp = 2 s; per diode 0.2 A IRSM non-repetitive peak reverse current tp = 100 s; per diode 0.2 A Tstg storage temperature -40 to 150 C Tj junction temperature 150 C VESD electrostatic discharge voltage 8 kV HBM; all pins; C = 250 pF; R = 1.5 k a = form factor = IF(RMS) / IF(AV) IF(AV) = IF(RMS) x Fig. 1. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values BYV32EB-200 Product data sheet Fig. 2. Forward power dissipation as a function of average forward current; square waveform; maximum values All information provided in this document is subject to legal disclaimers. 20 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 10 BYV32EB-200 WeEn Semiconductors Dual ultrafast power diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) Conditions Min Typ Max Unit with heatsink compound; both diodes conducting - - 1.6 K/W with heatsink compound; per diode; Fig 3 - - 2.4 K/W - 60 - K/W thermal resistance from junction to ambient Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse width BYV32EB-200 Product data sheet All information provided in this document is subject to legal disclaimers. 20 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 10 BYV32EB-200 WeEn Semiconductors Dual ultrafast power diode 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 8 A; Tj = 150 C; Fig. 4 - 0.72 0.85 V IF = 20 A; Tj = 25 C - 1 1.15 V VR = 200 V; Tj = 25 C - 6 30 A VR = 200 V; Tj = 100 C - 0.2 0.6 mA Static characteristics VF IR forward voltage reverse current Dynamic characteristics Qr recovered charge IF = 2 A; VR = 30 V; dIF/dt = 20 A/s; Tj = 25 C - 8 12.5 nC trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/s; Tj = 25 C; ramp recovery; Fig. 5 - 20 25 ns IF = 0.5 A to IR = 1 A; Tj = 25 C; measured at IR= 0.25 A; step recovery; Fig. 6 - 10 20 ns - - 1 V vFR forward recovery voltage IF = 1 A; dIF/dt = 10 A/s; Tj = 25 C; Fig. 7 BYV32EB-200 Product data sheet All information provided in this document is subject to legal disclaimers. 20 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 10 BYV32EB-200 WeEn Semiconductors Dual ultrafast power diode IF dlF dt trr time 25 % 100 % Qr IR IRM 003aac562 Fig. 5. Reverse recovery definitions; ramp recovery (1) Tj = 150 C; typical values (2) Tj = 150 C; maximum values (3) Tj = 25 C; maximum values Fig. 4. Forward current as a function of forward voltage IF time VF VFRM VF time 001aab912 Fig. 6. Reverse recovery definitions; step recovery BYV32EB-200 Product data sheet Fig. 7. Forward recovery definitions All information provided in this document is subject to legal disclaimers. 20 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 10 BYV32EB-200 WeEn Semiconductors Dual ultrafast power diode 11. Package outline BYV32EB-200 Product data sheet All information provided in this document is subject to legal disclaimers. 20 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 10 BYV32EB-200 WeEn Semiconductors Dual ultrafast power diode Right to make changes -- WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 12. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BYV32EB-200 Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 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All information provided in this document is subject to legal disclaimers. 20 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 10 BYV32EB-200 WeEn Semiconductors Dual ultrafast power diode Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BYV32EB-200 Product data sheet All information provided in this document is subject to legal disclaimers. 20 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 10 BYV32EB-200 WeEn Semiconductors Dual ultrafast power diode 13. Contents 1. General description........................................................1 2. Features and benefits....................................................1 3. Applications....................................................................1 4. Quick reference data......................................................1 5. Pinning information........................................................2 6. Ordering information......................................................2 7. Marking............................................................................2 8. Limiting values...............................................................3 9. Thermal characteristics.................................................4 10. Characteristics.............................................................5 11. Package outline............................................................7 12. Revision history...........................................................8 13. Legal information.........................................................9 14. Contents...................................................................... 11 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 7 March 2018 BYV32EB-200 Product data sheet All information provided in this document is subject to legal disclaimers. 20 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 10