TOSHIBA {DISCRETE/OPTOF b? DE P)s077e250 005377 1 I Silicon Epitaxial Planar Type 1 SV1 6 1 Variable Capacitance Diode le 9097250 TOSHIBA (DISCRETE/OPTO) = = 67. 09377. D T-07UG TENTATIVE Unit in mm CATV TUNING. ustais 3 Ret - 2 Fa a FEATURES: i - High Capacitance Ratio : C2y/C25y=10.5 (Typ.) z + Low Series Resistance : rg=0.62 (Typ.) 9 a : 26 a a a < Jd oO - ol Z S| of MAXIMUM RATINGS (Ta=25C) a6s . CHARACTERISTIC SYMBOL RATING UNIT _ i Reverse Voltage VR 30 v O6 01 5 e G26 Zr 9 Peak Reverse Voltage VRM 33 Vv 8 (RL=10K) 5 Junction Temperature Tj 125 Cc L CATHODE Storage Temperature Range Tstg -55~125 C 2% ANODE JEDEC - BIAJ - TOSHIBA 1-2I31A ELECTRICAL CHARACTERISTICS (Ta=25C) Weight : 0.022 CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Reverse Voltage VR Ip=1s4A 30 - - v Reverse Current Ir Vp=28V - - 10 nA Capacitance Cov VR=2V, f=1MHz 26 ~ 32 pF Capacitance C25V VrR=25V, f=1MHz 2.5 - 3.2 pF Capacitance Ratio Cay/C25V - 9.5 410.5 - Series Resistance Ys Vp=5V, f=470MHz - 0.6 0.8 a Note : Available in matched group for Cy VR capacitance to 2.5%. C(Max.) - C(Min.) Sian.) Wea) < 0.025 | (VR=2 ~ 25V) CATHODE MARK: YELLOW CAPACITANCE Cy (pF) 5 REVERSE VOLTAGE Vp () TOSHIBA CORPORATION 212