4085_MMBT5179 (WAFER SALES) 15.0 mils (381.0 um) NPN RF Amplifier BVCEO . . . . 12 V (Min) @ IC = 3.0 mA HFE . . . . . . 25 (Min) - 250 (Max) @ IC = 3.0 mA , VCE = 1.0 V TEMPERATURES Operating Junction Temperature E B 15.0 mils (381.0 um) ABSOLUTE MAXIMUM RATINGS (1) -55 to +150 Degrees C VOLTAGES & CURRENTS VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Ic Collector Current (Continuous) 12 V 20 V 2.5 V 50 mA PROCESS 40 EMITTER PAD 2.4 mils diameter Aluminum (60,96 um diameter) BASE PAD 2.4 mils diameter Aluminum (60.96 um diameter) DIE ATTACH Gold Eutectic AVE NET DIE 39,270 WAFER DIAMETER 4 in (101.6 mm) WAFER THICKNESS 8+1mil (203.2+25.4 um) ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated) SYM PARAMETER MIN MAX UNITS TEST CONDITIONS BVCEO Collector-Emitter Breakdown Voltage (2) 12 V IC = 3.0 mA IB = 0 BVCBO Collector-Base Breakdown Voltage 20 V IC = 1.0 uA IE = 0 BVEBO Emitter-Base Breakdown Voltage 2.5 V IE = 10 uA IC = 0 ICBO Collector-Cutoff Current nA VCB = IE = 0 hFE DC Current Gain VCE(SAT) Collector-Emitter Saturation Voltage VBE(SAT) Base-Emitter Saturation Voltage 20 25 250 400 1.0 15 V IC = 3.0 mA VCE = 1.0 V mV IC = 10 mA IB = 1.0 mA V IC = 10 mA IB = 1.0 mA (1) These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. (2) Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%. (c) 2000 Fairchild Semiconductor Corporation Pr40 - Rev. B