4085_MMBT5179
(WAFER SALES)
NPN RF Amplifier
BVCEO . . . . 12 V (Min) @ IC = 3.0 mA
HFE . . . . . . 25 (Min) - 250 (Max) @ IC = 3.0 mA , VCE = 1.0 V
ABSOLUTE MAXIMUM RATINGS (1)
SYM PARAMETER MIN MAX UNITS TEST CONDITIONS
BVCEO Collector-Emitter Breakdown Voltage (2) 12 V IC = 3.0 mA IB = 0
BVCBO Collector-Base Breakdown Voltage 20 V IC = 1.0 uA IE = 0
BVEBO Emitter-Base Breakdown Voltage 2.5 V IE = 10 uA IC = 0
ICBO Collector-Cutoff Current 20 nA VCB = 15 V IE = 0
hFE DC Current Gain 25 250 IC = 3.0 mA VCE = 1.0 V
VCE(SAT) Collector-Emitter Saturation Voltage 400 mV IC= 10 mA IB = 1.0 mA
VBE(SAT) Base-Emitter Saturation Voltage 1.0 V IC= 10 mA IB = 1.0 mA
TEMPERATURES
Operating Junction Temperature -55 to +150 Degrees C
VOLTAGES & CURRENTS
VCEO Collector-Emitter Voltage 12 V
VCBO Collector-Base Voltage 20 V
VEBO Emitter-Base Voltage 2.5 V
Ic Collector Current (Continuous) 50 mA
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
(1) These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
(2) Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%.
EMITTER PAD Aluminum
2.4 mils diameter (60,96 um diameter)
BASE PAD Aluminum
2.4 mils diameter (60.96 um diameter)
DIE ATTACH Gold Eutectic
AVE NET DIE 39,270
WAFER DIAMETER 4 in (101.6 mm)
WAFER THICKNESS 8+1mil (203.2+25.4 um)
© 2000 Fairchild Semiconductor Corporation Pr40 - Rev. B
15.0 mils
(381.0 um)
15.0 mils
(381.0 um)
BE
PROCESS 40
