International Rectifier HEXFET Power MOSFET Dynamic dv/dt Rating @ Repetitive Avalanche Rated @ P-Channel 175C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low PD-9 .319G IRF9520 Vpgs = -100V Rpsvon) = 0.600 > | 1 Ip=-6.8A on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commerciai-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings TO-220AB Parameter Max. Units Ip @ Te = 25C Continuous Drain Current, Vas @ -10 V 6.8 Ip @ Tc = 100C | Continuous Drain Current, Ves @ -10 V -4.8 A low Puised Drain Current +27 Pp @ Tc=25C_ | Power Dissipation 60 Ww Linear Derating Factor 0.40 wre Vas Gate-to-Source Voltage +20 Vv Eas Singie Pulse Avalanche Energy @ 300 mJ lar Avalanche Current 6.8 A Ear Repetitive Avalanche Energy 6.0 mJ dv/dt Peak Diode Recovery dv/dt $5 Vins Ts Operating Junction and -55 to +175 TstG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Sbfsin (1.1 Nem) Thermal Resistance Parameter Min. Typ. Max. Units Reasc Junction-to-Case _ _ 2.5 Recs Case-to-Sink, Flat, Greased Surface = 0.60 | = "CW Raa Junction-to-Ambient _ _ | 62 31IRF9520 | Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vierypss Drain-to-Source Breakdown Voltage -100 | _ V__| Vas=0V, ln=-250nA AVerjoss/ATy| Breakdown Voltage Temp. Coefficient |-0.10; | V/C | Reference to 25C, Ip=-1mA Roston) Static Drain-to-Source On-Resistance _- | 060} Q | Vas=-10V, Ip=-4.1A Vesith) Gate Threshold Voltage -2.00 | | -4.0 Vj Vos=Ves, lp=-250nA Dis Forward Transconductance 2.0 _ _ S| Vos=-50V, Ip=-4.1A Ipss Drain-to-Source Leakage Current _ _ {100 pA Vos=-100V, Vas=0V | -500 Vos=-80V, Vas=0V, Ty=150C. less Gate-to-Source Forward Leakage _ | -100 nA Ves=-20V Gate-to-Source Reverse Leakage _ _ 100 Vas=20V Qg Total Gate Charge = = 18 Ip=-6.8A Qys Gate-to-Source Charge | | 30 | nC | Vps=-80V Qoa Gate-to-Drain ("Miller") Charge _ _ 9.0 Vas=-10V See Fig. 6 and 13 @ tajon) Tum-On Delay Time _ 9.6 _ Vpp=-50V tr Rise Time _ 29 ns lp=-6.8A tarorty Turn-Off Delay Time _ 21 _ Re=18Q tr Fall Time _ 25 _ Ro=7.1Q See Figure 10 @ Lo internal Drain Inductance - 45 | samo. gad j i nH | from package (i Ls Internal Source Inductance ~ | 755 and center of a die contact 8 Ciss Input Capacitance | 390 | Vas=0V Coss Output Capacitance 170 _ PF | Vps=-25V Crsg Reverse Transfer Capacitance _ 45 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current ~ | | 68 MOSFET symbol (Body Diode) . A showing the Ism Pulsed Source Current _ _ 27 integral reverse @ (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage _ _ 6.3 Vs} Ty=25C, Is=-6.8A, Vas=0V ter Reverse Recovery Time 98 200 ns | Ty=25C, le=-6.8A On Reverse Recovery Charge | 0.33 | 0.66 | uC | di/dt=100A/is ton Forward Turn-On Time Intrinsic turn-on time is neglegibte (turn-on is dominated by Lg+Lp) Notes: @ Repetitive rating; pulse width limited by Isps-6.8A, di/dts110A/us, Vpp<V(eR)DSs, max. junction temperature (See Figure 11) Ts175C Vpp=-25V, starting Ty=25C, L=9.7mMH @ Pulse width < 300 us; duty cycle <2%. Ra=25Q, las=-6.8A (See Figure 12) 312IRF9520 -lp, Drain Current (Amps) -Ip, Drain Current (Amps) eg tot E <x 5 = = 3 & s a A Y 10 20us PULSE WIDTH 20us PULSE WIOTH To = 25C To = 175C -Vps, Drain-to-Source Voltage (volts) -Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, To=25C To=175C 3.0 (Normalized) o a Vog = -50V 20us PULSE WIDTH 6s = 4 4120 1401 Rosyon); Drain-to-Source On Resistance oO 4 -Vas, Gate-to-Source Voltage (voits) Ty, Junction Temperature (C) t Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 313IRF9520 | 900 20 Cgs + Cg Cas gd 750 + a 600 an to 450 300 Capacitance (pF) Coss -Vgg, Gate-to-Source Voltage (volts) rss FOR TEST CIRCUIT SEE FIGURE 13 0 0 1400 4 -Vps, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 103 ~ OPERA IN THIS AREA LIMITED Q 5 BY Ros (ON) 10! =< Qa & 10? & = wo 5 a 0 @ Ps sg 10 oa 3 aos cc + a T, ae 2 Ty=1759C 4 Veg = OV SINGLE PULSE 10 4. . . 4. 0 vu 2 5 40 2 5 10? 2 5 403 -Vsp, Source-to-Drain Voltage (volts) -Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 314-Ip, Drain Current (Amps) IOR IRF9520 Vos WAG D.U.T. =, Vop \E-10Vv Pulse Width < 1s Duty Factor s 0.1% L Fig 10a. Switching Time Test Circuit taon) tr tagon) tt 0 25 50 75 400 125 150 475 To, Case Temperature (C) Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature SINGLE PULSE Po (THERMAL RESPONSE) eet tal Thermal Response (Zajc) NOTES: 4. DUTY FACTOR, D=t4/t2 2, PEAK Ty=Ppy xX Zthjc + To 105 10-4 109 10-2 O.4 4 10 t;, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 315IRF9520 Vary tp to obtain Vos >4 required las Fig 12a. Unclamped Inductive Test Circuit las ~ -- Eas, Single Pulse Energy (mJ) Vos 0 25 50 75 100 125 150 175 Starting Ty, Junction Temperature(C) Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator J po) See -10V Va Charge > Ig D Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1506 Appendix B: Package Outline Mechanical Drawing See page 1509 Appendix C: Part Marking Information - See page 1516 International Appendix E: Optional Leadforms See page 1525 Rectifi er 316