SFH628A-3 - Infineon Technologies



2001 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

2–242 March 12, 2000-00

FEATURES

• Very High CTR at

=1.0 mA,

=0.5 V

– SFH618A-2, 63–125%

– SFH618A-3, 100–200%

– SFH618A-4, 160–320%

– SFH618A-5, 250–500%

– SFH628A-2, 63–200%

– SFH628A-3, 100–320%

– SFH628A-4, 160–500%

• Speciﬁed Minimum CTR at

=0.5 mA

– SFH618A,

=1.5 V:

≥

32% (typical 120%)

– SFH628A,

=1.5 V:

≥

50% (typical 160%)

• Good CTR Linearity Depending on

Forward Current

• Low CTR Degradation

• High Collector-emitter Voltage,

CEO

=55 V

• Isolation Test Voltage, 5300 V

RMS

• Low Coupling Capacitance

• Field-Effect Stable by TRIOS (TRansparent IOn

Shield)

• End-Stackable, 0.100" (2.54 mm) Spacing

• High Common-mode Interference Immunity

(Unconnected Base)

• Underwriters Lab File #52744

• VDE 0884 Available with Option 1

• SMD Option — See SFH6186/6286 Data Sheet

APPLICATIONS

• Telecom

• Industrial Controls

• Battery Powered Equipment

• Ofﬁce Machines

DESCRIPTION

The SFH618A/628A feature a high current transfer

ratio, low coupling capacitance and high isolation

voltage. These couplers have a GaAs infrared emit-

ting diode emitter, which is optically coupled to a sili-

con planar phototransistor detector, and is

incorporated in a plastic DIP-4 package.

The coupling devices are designed for signal trans-

mission between two electrically separated circuits.

The couplers are end-stackable with 2.54 mm lead

spacing.

Creepage and clearance distances of >8.0 mm are

achieved with option 6. This version complies with

IEC 950 (DIN VDE 0805) for reinforced insulation up

to an operation voltage of 400 V

RMS

or DC.

SFH618A/628A

Phototransistor, 5.3 kV TRIOS



Low Current Input

Optocoupler

Maximum Ratings

Emitter

Reverse Voltage (SFH618A)............................................................. 6.0 V

DC Forward Current (SFH628A) ..................................................±50 mA

Surge Forward Current (t

≤

10 µs) (SFH628A) ...............................±2.5 A

Total Power Dissipation ................................................................. 70 mW

Detector

Collector-emitter Voltage ................................................................... 55 V

Emitter-collector Voltage................................................................... 7.0 V

Collector Current ............................................................................ 50 mA

Collector Current (t

≤

1.0 ms) ....................................................... 100 mA

Total Power Dissipation ............................................................... 150 mW

Package

Isolation Test Voltage between Emitter and

Detector, refer to Climate DIN 40046,

part 2, Nov. 74 ..................................................................... 5300 V

RMS

Creepage Distance ....................................................................

≥

7.0 mm

Clearance ...................................................................................

≥

7.0 mm

Insulation Thickness between Emitter and Detector ..................

≥

0.4 mm

Comparative Tracking Index

per DIN IEC 112/VDE0 303, part 1 ..................................................175

Isolation Resistance

=500 V,

=25

C.................................................................

≥

Ω

=500 V,

=100

C...............................................................

≥

Ω

Storage Temperature Range ............................................. –55 to +150

Ambient Temperature Range............................................. –55 to +100

Junction Temperature......................................................................100

Soldering Temperature (max. 10 s. Dip Soldering

Distance to Seating Plane

≥

1.5 mm) ..........................................260

Dimensions in Inches (mm)

.255 (6.48)

.268 (6.81)

.179 (4.55)

.190 (4.83)

pin one ID

.030 (.76)

.045 (1.14)

4°

typ.

0.100 (2.54)

.130 (3.30)

.150 (3.81)

.020 (.508 )

.035 (.89)

10°

3°–9°

.018 (.46)

.022 (.56)

.008 (.20)

.012 (.30)

.031 (.79) typ.

.050 (1.27) typ.

.300 (7.62) typ.

.110 (2.79)

.130 (3.30)

.230 (5.84)

.250 (6.35)

.050 (1.27)

Collector

Emitter

Anode

Cathode

SFH618A

Collector

Emitter

Anode/

Cathode

Cathode/

Anode

SFH628A



2001 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH618A/628A

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

2–243 March 12, 2000-00

Characteristics

(

=25

Description Symbol Min. Typ. Max. Unit Condition

Emitter

Forward Voltage

—1.1 1.5 V

=5.0 mA

Reverse Current SFH618A

—.01 10

=6.0 V

Capacitance SFH618A

SFH628A

—25

—pF

=0 V, f=1.0 MHz

Thermal Resistance

thJA

—1070 —K/W —

Detector

Collector-emitter Leakage Current

CEO

—10 200 nA

=10 V

Capacitance C

—7—pF

=5.0 V, f=1.0 MHz

Thermal Resistance

thJA

—500 —K/W —

Package

Collector-emitter Saturation Voltage SFH618A-2

CEsat

—0.25 0.4 V

=0.32 mA,

=1.0 mA

SFH618A-3 —0.25 0.4

=0.5 mA,

=1.0 mA

SFH618A-4 —0.25 0.4

=0.8 mA,

=1.0 mA

SFH618A-5 —0.25 0.4

=1.25 mA,

=1.0 mA

Collector-emitter Saturation Voltage SFH628A-2

CEsat

—0.25 0.4 V

=0.5 mA,

=±1.0 mA

SFH628A-3 —0.25 0.4

=0.8 mA,

=±1.0 mA

SFH628A-4 —0.25 0.4

=1.25 mA,

=±1.0 mA

Coupling Capacitance —C

—0.25 —pF —

Coupling Transfer Ratio SFH618A-2

63 —125 %

=1.0 mA,

=0.5 V

SFH618A-2 32 75 —

=0.5 mA,

=1.5 V

SFH618A-3

100 —200 %

=1.0 mA,

=0.5 V

SFH618A-3 50 120 —

=0.5 mA,

=1.5 V

SFH618A-4

160 —320 %

=1.0 mA,

=0.5 V

SFH618A-4 80 200 —

=0.5 mA,

=1.5 V

SFH618A-5

IC/IF250 —500 % IF=1.0 mA, VCE=0.5 V

SFH618A-5 125 300 —IF=0.5 mA, VCE=1.5 V

Coupling Transfer Ratio SFH628A-2 IC/IF63 —200 % IF=±1.0 mA, VCE=0.5 V

SFH628A-2 32 100 —IF=±0.5 mA, VCE=1.5 V

SFH628A-3 IC/IF100 —320 % IF=±1.0 mA, VCE=0.5 V

SFH628A-3 50 160 —IF=±0.5 mA, VCE=1.5 V

SFH628A-4 IC/IF160 —500 % IF=±1.0 mA, VCE=0.5 V

SFH628A-4 80 250 —IF=±0.5 mA, VCE=1.5 V

 2001 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH618A/628A

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

2–244 March 12, 2000-00

Figure 1. Current Transfer Ratio (typ.)

VCE=0.5 V, CTR=f(TA)

Figure 2. Current Transfer Ratio (typ.)

VCE=1.5 V, CTR=f(T

Figure 3. Diode Forward Voltage

A=25°C, VF=f(IF)

Figure 4. Diode Forward Voltage

IF=1.0 mA, VF=f(T

Figure 5. Transistor Capacitance

A=25°C, f=1.0 MHz, CCE=f(VCE)

Figure 6. Output Characteristics

TA=25°C, CE=f(VCE, IF)

Figure 7. Permissible Forward Current

Diode IF=f(T

Figure 8. Permissible Power

Dissipation Ptot=f(T

Figure 9. Switching Times (typ.)

A=25°C, IF=1.0 mA, VCC=5.0 V

ton, tr, toff, tf=f(RL)

 2001 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH618A/628A

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

2–245 March 12, 2000-00

Switching Times, typical

VCC=5.0 V, IC=2.0 mA, RL=100 Ω, TA=25°C

Figure 10. Test Circuit—SFH618A

Turn-on Time ton 6.0 µs

Rise Time tr3.5

Turn-off Time toff 5.5

Fall Time tf5.0

Input VOUT

VCC = 5 V

Figure 11. Test Circuit—SFH628A

Figure 12. Test Circuit and Waveforms

±IF

47Ω

VCC

10%

90%

Input Pulse

Output Pulse

ton

toff