TGF2023-02
1
Apr 2011 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Datasheet subject to change without notice.
Primary Applications
Product Description
Key Features
12 Watt Discrete Power GaN on SiC HEMT
Bias conditions: Vd = 28 V, Idq = 250 mA, Vg = -3.6 V Typical
•Frequency Range: DC - 18 GHz
•41 dBm Nominal Psat at 3 GHz
•58% Maximum PAE
•18 dB Nominal Power Gain
•Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V
Typical
•Technology: 0.25 um Power GaN on SiC
•Chip Dimensions: 0.82 x 0.92 x 0.10 mm
The TriQuint TGF2023-02 is a discrete 2.5 mm
GaN on SiC HEMT which operates from DC-18
GHz. The TGF2023-02 is designed using
TriQuint’s proven 0.25um GaN production process.
This process features advanced field plate
techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
The TGF2023-02 typically provides 41 dBm of
saturated output power with power gain of 18dB at
3 GHz. The maximum power added efficiency is
58% which makes the TGF2023-02 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
.
•Defense & Aerospace
•Broadband Wireless
TGF2023-02
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Apr 2011 © Rev D
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Table II
Recommended Operating Conditions
Table I
Absolute Maximum Ratings 1/
Symbol Parameter Value
Vd Drain Voltage 28 - 32 V
Idq Drain Current 250 mA
Id_Drive Drain Current under RF Drive 750 mA
Vg Gate Voltage -3.6 V
1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the
maximum power dissipation listed in Table IV.
Symbol Parameter Value Notes
Vd Drain Voltage 40 V 2/
Vg Gate Voltage Range -50 to 0 V
Vdg Drain-Gate Voltage 80 V
Id Drain Current 2.5 A 2/
Ig Gate Current 14 mA
Pin Input Continuous Wave Power 34 dBm 2/
Tch Channel Temperature 200 °C
TGF2023-02
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Table III
RF Characterization Table 1/
Bias: Vd = 28 V, Idq = 250 mA, Vg = -3.6V Typical
1/ Values in this table are engineering estimates scaled from measurements on the 1.25 mm
GaN/SiC unit cell (see TGF2023-01 datasheet)
2/ Large signal equivalent output network (normalized) (see figure, pg 7)
SYMBOL PARAMETER 3 GHz 6 GHz 10 GHz 14 GHz UNITS
Power Tuned:
Psat Saturated Output
Power
41 40.3 40.2 38.8 dBm
PAE Power Added
Efficiency
58 56 50 41 %
Gain Power Gain 18.1 12.3 9.9 6.6 dB
Efficiency Tuned:
Psat Saturated Output
Power
39.7 38.6 39.9 38.8 dBm
PAE Power Added
Efficiency
64 64 52 42 %
Gain Power Gain 17.4 12.9 10.2 6.5 dB
SYMBOL PARAMETER 3 GHz 6 GHz 10 GHz 14 GHz UNITS
Power Tuned:
Rp 2/ Parallel Resistance 79.3 81.9 61.5 49.9 Ω·mm
Cp 2/ Parallel Capacitance 0.524 0.348 0.426 0.432 pF/mm
Efficiency Tuned:
Rp 2/ Parallel Resistance 153 171 72.1 53.1 Ω·mm
Cp 2/ Parallel Capacitance 0.426 0.372 0.414 0.472 pF/mm
TGF2023-02
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Apr 2011 © Rev D
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Parameter Test Conditions Value Notes
Maximum Power Dissipation Tbaseplate = 70 ºC Pd = 16.2 W
Tchannel = 200 ºC
Tm = 1.5E+6 Hrs
2/
Thermal Resistance, θjc Vd = 28 V
Id = 250 mA
Pd = 7 W
Tbaseplate = 70 ºC
θjc = 8.0 (ºC/W)
Tchannel = 126 ºC
Tm = 6.4E+8 Hrs
Thermal Resistance, θjc
Under RF Drive
Vd = 28 V
Id = 763 mA
Pout = 41 dBm
Pd = 9.0 W
Tbaseplate = 70 ºC
θjc = 8.0 (ºC/W)
Tchannel = 142 ºC
Tm = 1.5E+8 Hrs
Mounting Temperature 30 Seconds 320 ºC
Storage Temperature -65 to 150 ºC
Table IV
Power Dissipation and Thermal Properties 1/
1/ Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10mil CuMo Carrier Plate
2/ Channel operating temperature will directly affect the device median lifetime. For maximum life, it is
recommended that channel temperatures be maintained at the lowest possible levels.
TGF2023-02
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Median Lifetime vs Channel Temperature
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MODEL
PARAMETER Vd=28V
Idq=125mA UNITS
Rg 0.78 Ω
Rs 0.13 Ω
Rd 1.28 Ω
gm 0.270 S
Cgs 1.79 pF
Ri 0.26 Ω
Cds 0.308 pF
Rds 123.6 Ω
Cgd 0.064 pF
Tau 2.78 pS
Ls 0.0058 nH
Lg -0.013 nH
Ld 0.018 nH
Rgs 8900 Ω
Rgd 1730000 Ω
Linear Model for 1.25 mm Unit GaN Cell (UGC)
Unit GaN cell (UGC)
Reference Plane
Source
Drain
Lg Rg Cdg Rd Ld
Rdg
Gate
Rgs
Cgs
Ri
+
vi
-
gm vi
Rds Cds
Ls
Rs
TGF2023-02
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Apr 2011 © Rev D
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Complete 2.5mm GaN HEMT Linear Model
Includes 2 UGC, 3 vias, and 4 bonding pads
Γ_load
Rp, Cp
Gate Pads Drain Pads
.s4p file
1
4
2
3
TGF2023-02
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Apr 2011 © Rev D
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge . Proper precautions should
be observed during handling, assembly and test.
Mechanical Drawing
Units: millimeters
Thickness: 0.100
Die x,y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad #1, #2 Vg 0.154 x 0.115
Bond Pad #3 Vd 0.154 x 0.490
TGF2023-02
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Apr 2011 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge . Proper precautions should
be observed during handling, assembly and test.
Assembly Notes
Ordering Information
Component placement and adhesive attachment assembly notes:
•Vacuum pencils and/or vacuum collets are the preferred method of pick up.
•Air bridges must be avoided during placement.
•The force impact is critical during auto placement.
•Organic attachment (i.e. epoxy) can be used in low-power applications.
•Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
•Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.
•An alloy station or conveyor furnace with reducing atmosphere should be used.
•Do not use any kind of flux.
•Coefficient of thermal expansion matching is critical for long-term reliability.
•Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
•Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.
•Force, time, and ultrasonics are critical bonding parameters.
•Aluminum wire should not be used.
•Devices with small pad sizes should be bonded with 0.0007-inch wire.
Part ECCN Package Style
TGF2023-02 EAR99 GaN on SiC Die
