VSMY7852X01
www.vishay.com Vishay Semiconductors
Rev. 1.7, 06-Apr-17 1Document Number: 81146
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY7852X01 is an
infrared, 850 nm emitting diode based on surface emitter
technology with high radiant power and high speed, molded
in low thermal resistance Little Star package. A 20 mil chip
provides outstanding low forward voltage and allows DC
operation of the device up to 250 mA.
APPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Machine vision IR data transmission
FEATURES
• Package type: surface-mount
• Package form: Little Star®
• Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Designed for high drive currents: up to 250 mA DC and up
to 1.5 A pulses
• Low thermal resistance: RthJP = 15 K/W
• Floor life: 1 year, MSL 2, according to J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
20783
2078
3
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMY7852X01 55 ± 60 850 8
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY7852X01-GS08 Tape and reel MOQ: 2000 pcs, 2000 pcs/reel Little Star
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF250 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 500 mA
Surge forward current tp = 100 μs IFSM 1.5 A
Power dissipation PV500 mW
Junction temperature Tj125 °C
Operating temperature range Tamb -40 to +100 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature According to Fig. 7, J-STD-20 Tsd 260 °C
Thermal resistance junction-to-pin According to J-STD-051, soldered on PCB RthJP 15 K/W
VSMY7852X01
www.vishay.com Vishay Semiconductors
Rev. 1.7, 06-Apr-17 2Document Number: 81146
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
21779
Tamb - Ambient Temperature (°C)
PV - Power Dissipation (mW)
0
100
200
300
400
500
600
0 20 40 60 80 100 120
RthJP = 15 K/W
21780
Tamb - Ambient Temperature (°C)
IF - Forward Current (mA)
0
50
100
150
200
250
300
0 20 40 60 80 100 120
RthJP = 15 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 250 mA, tp = 10 ms VF-1.72.0V
Temperature coefficient of VFIF = 1 mA TKVF --1.5-mV/K
Reverse current VR = 5 V IRNot designed for reverse operation μA
Radiant intensity IF = 250 mA, tp = 10 ms Ie30 55 90 mW/sr
Radiant power IF = 250 mA, tp = 20 ms φe-130-mW
Temperature coefficient of φeIF = 1 A TKφe- -0.5 - %/K
Angle of half intensity ϕ-± 60-deg
Peak wavelength IF = 250 mA λp-850-nm
Spectral bandwidth IF = 250 mA Δλ -30-nm
Temperature coefficient of λpIF = 250 mA TKλp-0.2-nm/K
Rise time IF = 250 mA tr-8-ns
Fall time IF = 250 mA tf-10-ns
VSMY7852X01
www.vishay.com Vishay Semiconductors
Rev. 1.7, 06-Apr-17 3Document Number: 81146
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 5 - Relative Radiant Power vs. Wavelength
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
21781
I
F
- Forward Current (A)
V
F
- Forward Voltage (V)
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3
t
p
= 100 µs
I
F - Forward Current (A)
Ie - Radiant Intensity (mW/sr)
0.1
1
10
100
1000
0.001 0.01 0.1 1 10
t
p
= 100 µs
λ- Wavelength (nm)
21776
Φe, rel - Relative Radiant Power
0
0.25
0.5
0.75
1
650 750 850 950
0.4 0.2 0
I
e, rel
- Relative Radiant Intensity
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
948013-1
VSMY7852X01
www.vishay.com Vishay Semiconductors
Rev. 1.7, 06-Apr-17 4Document Number: 81146
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING DIMENSIONS in millimeters
20846
VSMY7852X01
www.vishay.com Vishay Semiconductors
Rev. 1.7, 06-Apr-17 5Document Number: 81146
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
Drawing-No.: 6.541-5076.01-4
Issue: 3; 22.10.14
technical drawings
according to DIN
specications
Anode marking
Not indicated tolerances ± 0.1
3
5.2
6
0.5
6
7
0.1
0.7
0.7
0.3
0.6
1.6
2.62.6
Ø 3.3
Recommended solder pad
Recommended area for heat sink
connected with anode pad
solder pad
anode
19
8.2
6.2
2
3
1.2
17.5
8.65
solder pad cathode
contour of
device
VSMY7852X01
www.vishay.com Vishay Semiconductors
Rev. 1.7, 06-Apr-17 6Document Number: 81146
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOLDER PROFILE
Fig. 7 - Lead (Pb)-free Reflow Solder Profile According to
J-STD-020 for Preconditioning According to JEDEC®, Level 2
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 1 year
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2, according to J-STD-020B
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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