NTMFS08N004C NChannel Shielded Gate POWERTRENCH) MOSFET 80 V, 126 A, 4.0 mW General Description This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. www.onsemi.com VDS 80 V Shielded Gate MOSFET Technology Max rDS(on) = 4.0 mW at VGS = 10 V, ID = 44 A Max rDS(on) = 12.5 mW at VGS = 6 V, ID = 22 A 50% Lower Qrr than Other MOSFET Suppliers Lowers Switching Noise/EMI MSL1 Robust Package Design 100% UIL Tested These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 126 A S (1, 2, 3) G (4) D (5, 6, 7, 8) N-CHANNEL MOSFET Applications * * * * ID MAX 12.5 mW @ 6 V Features * * * * * * * * RDS(ON) MAX Primary DC-DC MOSFET Synchronous Rectifier in DC-DC and AC-DC Motor Drive Solar Pin 1 Top MAXIMUM RATINGS (TA = 25C unless otherwise noted) Parameter Symbol Value Unit VDS Drain to Source Voltage 80 V VGS Gate to Source Voltage 20 V ID Drain Current: Continuous, TC = 25C (Note 5) Continuous, TC = 100C (Note 5) Continuous, TA = 25C (Note 1a) Pulsed (Note 4) EAS Single Pulse Avalanche Energy (Note 3) PD Power Dissipation: TC = 25C TA = 25C (Note 1a) TJ, TSTG Operating and Storage Junction Temperature Range Bottom Power 56 (PQFN8) CASE 483AE MARKING DIAGRAM A 126 80 18 637 S S S 486 mJ W 125 2.5 C -55 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. G $Y &Z &3 &K NTMFS08N004C D $Y&Z&3&K NTMFS 08N004C D D D = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. (c) Semiconductor Components Industries, LLC, 2017 November, 2017 - Rev. 2 1 Publication Order Number: NTMFS08N004C/D NTMFS08N004C THERMAL CHARACTERISTICS Symbol Parameter Value Unit C/W RqJC Thermal Resistance, Junction to Case 1.0 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 50 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V DBVDSS /DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 mA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 4.0 V BVDSS 80 V 40 mV/C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA DVGS(th) /DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25C -8.3 Static Drain to Source On Resistance VGS = 10 V, ID = 44 A 3.4 4.0 VGS = 6 V, ID = 22 A 5.2 12.5 VGS = 10 V, ID = 44 A, TJ = 125C 5.8 7.8 VDS = 5 V, ID = 44 A 98 rDS(on) gFS Forward Transconductance 2.0 3.1 mV/C mW S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Crss Rg VDS = 40 V, VGS = 0 V, f = 1 MHz 3035 5100 pF Output Capacitance 940 1580 pF Reverse Transfer Capacitance 27 50 pF 1.1 2.3 W 17 30 ns 6 12 ns Turn-Off Delay Time 25 40 ns Fall Time 4 10 ns VGS = 0 V to 10 V, VDD = 40 V, ID = 44 A 39 66 nC VGS = 0 V to 6 V, VDD = 40 V, ID = 44 A 25 41 nC Gate Resistance 0.1 SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg Turn-On Delay Time Rise Time Total Gate Charge VDD = 40 V, ID = 44 A, VGS = 10 V, RGEN = 6 W Qgs Gate to Source Charge VDD = 40 V, ID = 44 A 13 nC Qgd Gate to Drain "Miller" Charge VDD = 40 V, ID = 44 A 7 nC Qoss Output Charge VDD = 40 V, VGS = 0 V 55 nC Qsync Total Gate Charge Sync. VDS = 0 V, ID = 44 A 35 nC www.onsemi.com 2 NTMFS08N004C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (continued) Symbol Parameter Test Condition Min Typ Max Unit VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V VGS = 0 V, IS = 44 A (Note 2) 0.8 1.3 IF = 22 A, di/dt = 300 A/ms 26 41 ns 48 76 nC DRAIN-SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 22 A, di/dt = 1000 A/ms 19 31 ns 108 174 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RqCA is determined by the user's board design. a) 50C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. 3. 4. 5. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. EAS of 486 mJ is based on starting TJ = 25C; N-ch: L = 3 mH, IAS = 18 A, VDD = 80 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 57 A. Pulsed Id please refer to Figure 11 SOA graph for more details. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Package Reel Size Tape Width Quantity NTMFS08N004C NTMFS08N004C Power 56 (PQFN8) (Pb-Free / Halogen Free) 13 12 mm 3000 units www.onsemi.com 3 NTMFS08N004C TYPICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) VGS = 10 V PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 250 VGS = 8 V 200 150 VGS = 6 V 100 VGS = 5.5 V 50 VGS = 5 V 0 0 1 2 3 4 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 300 VGS = 5 V 4 VGS = 5.5 V 3 VGS = 6 V 2 VGS = 8 V 1 0 5 0 50 Figure 1. On Region Characteristics 200 250 300 25 ID = 44 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 2.0 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 20 15 10 TJ = 125 oC 5 TJ = 25 oC 0 100 125 150 ID = 44 A 4 5 o Figure 3. Normalized On-Resistance vs. Junction Temperature IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX VDS = 5 V 180 TJ = 150 oC 120 TJ = 25 oC 60 TJ = -55oC 3 4 5 6 7 8 7 8 9 10 Figure 4. On-Resistance vs. Gate to Source Voltage 300 240 6 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) ID, DRAIN CURRENT (A) 100 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 0 VGS = 10 V PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 300 100 VGS = 0 V 10 1 TJ = 25 oC 0.1 0.01 0.001 0.0 9 TJ = 150 oC TJ = -55oC 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 1.2 NTMFS08N004C TYPICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) 10000 Ciss ID = 44 A VDD = 30 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 40 V 6 VDD = 50 V 4 1000 100 Crss 10 2 0 Coss f = 1 MHz VGS = 0 V 0 8 16 24 32 1 0.1 40 1 10 80 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 150 100 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RqJC = 1.0 C/W TJ = 25 oC TJ = 100 oC 10 TJ = 125 oC 125 100 VGS = 10 V 75 50 VGS = 6 V 25 1 0.001 0 0.01 0.1 1 10 100 1000 25 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 125 150 100000 10 m s 100 THIS AREA IS LIMITED BY r DS(on) 100 m s SINGLE PULSE TJ = MAX RATED 1 ms RqJC = 1.0 C/W o TC = 25 oC 0.1 0.1 100 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 1000 1 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 10 50 o tAV, TIME IN AVALANCHE (ms) 1 CURVE BENT TO MEASURED DATA 10 10 ms 100 ms/DC 100 SINGLE PULSE RqJC = 1.0 oC/W TC = 25 oC 10000 1000 500 VDS, DRAIN to SOURCE VOLTAGE (V) 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1 NTMFS08N004C TYPICAL CHARACTERISTICS r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE (TJ = 25C unless otherwise noted) 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 -5 10 NOTES: SINGLE PULSE -4 10 ZqJC(t) = r(t) x RqJC RqJC = 1.0 oC/W Peak T J = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 -3 -2 10 10 -1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 6 1 NTMFS08N004C PACKAGE DIMENSIONS PQFN8 5X6, 1.27P CASE 483AE ISSUE A www.onsemi.com 7 NTMFS08N004C POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFS08N004C/D