MS1077 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS1077 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. IMPORTANT: For the most current data, visit: http://www.advancedpower.com Optimized for SSB 30 MHz 28 Volts IMD -30dB Common Emitter Gold Metallization POUT = 130 W PEP GP = 12 dB Gain APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS HF SSB Applications ABSOLUTE MAXIMUM RATINGS (TCASE = 25C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 70 35 4.0 12 175 +200 -65 to +150 Unit V V V A W C C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 1.0 C/W MS1077 053-7049 Rev - 10-2002 MS1077 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25C Symbol BVCES BVCEO BVEBO ICES hFE Test Conditions IC = 50 mA IC = 100 mA IE = 20 mA VCE =35 V VCE = 5 V Min. 70 35 4.0 VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 7 A MS1077 Typ. Max. 20 50 18 Units V V V mA DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25C Symbol Test Conditions f = 30 MHz POUT POUT = 130 W PEP GP IMD * POUT = 130 W PEP POUT = 130 W PEP C f = 1 MHz COB Note: * f1 = 30.00 MHz, f2 = 30.01 MHz VCE = 28 V VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA Min. 130 12 MS1077 Typ. Max. -30 37 220 260 Units W dB dBc % pF ELECTRICALS 053-7049 Rev - 10-2002 MS1077 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW PACKAGE DATTA 053-7049 Rev - 10-2002