053-7049 Rev - 10-2002
MS1077
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
DESCRIPTION
DESCRIPTIONDESCRIPTION
DESCRIPTION
The MS1077 is a Class AB epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device utilizes
emitter ballasting to achieve extreme ruggedness under severe
operating conditions.
IMPORTANT: For the most current data, visit: http://www.advancedpower.com
KEY FEATURES
KEY FEATURES KEY FEATURES
KEY FEATURES
Optimized for SSB
30 MHz
28 Volts
IMD –30dB
Common Emitter
Gold Metallization
POUT = 130 W PEP
GP = 12 dB Gain
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
SS
S
HF SSB Applications
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°
°°
°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 70 V
VCEO Collector-Emitter Voltage 35 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 12 A
PDISS Power Dissipation 175 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature -65 to +150 °C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 1.0 °C/W
M
MS
S1
10
07
77
7
053-7049 Rev - 10-2002
MS1077
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C
MS1077
Symbol Test Conditions Min. Typ. Max.
Units
BVCES IC = 50 mA VBE = 0 V 70 V
BVCEO IC = 100 mA IB = 0 mA 35 V
BVEBO IE = 20 mA IC = 0 mA 4.0 V
ICES VCE =35 V IE = 0 mA 20 mA
hFE VCE = 5 V IC = 7 A 18 50
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C
MS1077
Symbol Test Conditions Min. Typ. Max.
Units
POUT f = 30 MHz VCE = 28 V ICQ = 150 mA 130 W
GP POUT = 130 W PEP VCE = 28 V ICQ = 150 mA 12 dB
IMD * POUT = 130 W PEP VCE = 28 V ICQ = 150 mA -30 dBc
ηC POUT = 130 W PEP VCE = 28 V ICQ = 150 mA 37 %
COB f = 1 MHz VCB = 28 V 220 260 pF
Note: * f1 = 30.00 MHz, f2 = 30.01 MHz
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053-7049 Rev - 10-2002
MS1077
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
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AC
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