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FJP3305 High Voltage Fast-Switching NPN Power Transistor * High Voltage Capability * High Switching Speed * Suitable for Electronic Ballast and Switching Regulator 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25C unless otherwise noted Parameter Value Units V CBO Collector-Base Voltage 700 V V CEO Collector-Emitter Voltage 400 V V EBO Emitter-Base Voltage 9 V IC Collector Current (DC) 4 A ICP Collector Current (Pulse) 8 A IB Base Current 2 A PC Collector Dissipation (TC = 25C) 75 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C (c) 2007 Fairchild Semiconductor Corporation FJP3305 Rev. 1.0.0 www.fairchildsemi.com 1 FJP3305 -- High Voltage Fast-Switching NPN Power Transistor October 2008 Symbol TC = 25C unless otherwise noted Parameter Conditions Min. Typ. Max Units BV CBO Collector-Base Breakdwon Voltage IC = 500mA, IE = 0 700 V BV CEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BV EBO Emitter-Base Breakdown Voltage IE = 500mA, IC = 0 9 V ICBO Collector Cut-off Current VCB = 700V, IE = 0 1 mA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 1 mA hFE1 hFE2 DC Current Gain * VCE = 5V, IC = 1A VCE = 5V, IC = 2A V CE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A 0.5 0.6 1.0 V V V V BE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A 1.2 1.6 V V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A C ob Output Capacitance VCB = 10V, f = 1MHz tON Turn On Time tSTG Storge Time tF Fall Time VCC = 125V, IC = 2A IB1 = -IB2 = 0.4A RL = 62.5W 19 8 35 40 4 MHz 65 pF 0.8 ms 4.0 ms 0.9 ms * Pulse Test: PW 300ms, Duty Cycle 2% hFE Classification Classification H1 H2 hFE1 19 ~ 28 26 ~ 35 (c) 2007 Fairchild Semiconductor Corporation FJP3305 Rev. 1.0.0 www.fairchildsemi.com 2 FJP3305 -- High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain (R-Grade) 100 5.0 VCE = 5V 4.5 IC [A], COLLECTOR CURRENT O 4.0 IB = 300mA hFE, DC CURRENT GAIN 3.5 3.0 2.5 IB = 100mA 2.0 1.5 Ta = 75 C O IB = 50mA 1.0 Ta = 125 C O Ta = - 25 C O Ta = 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 Figure 3. DC Current Gain (O-Grade) 10 VCE(sat) [V], SATURATION VOLTAGE VCE = 5V O O Ta = 75 C hFE, DC CURRENT GAIN Ta = 125 C O Ta = - 25 C O Ta = 25 C 10 1 0.01 0.1 1 IC = 4 IB O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.01 0.01 10 0.1 Figure 5. Saturatin Voltage (O-Grade) 10 Figure 6. Saturation Voltage (R-Grade) 10 10 IC = 4 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CUTRRENT O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.1 1 IC = 4 IB O 1 Ta = 25 C O Ta = - 25 C O Ta = 125 C O Ta = 75 C 0.1 0.01 0.01 10 IC [A], COLLECTOR CURRENT 0.1 1 10 IC [A], COLLECTOR CURRENT (c) 2007 Fairchild Semiconductor Corporation FJP3305 Rev. 1.0.0 10 Figure 4. Saturation Voltage (R-Grade) 100 0.01 0.01 1 IC [A], COLLECTOR CUTRRENT VCE [V], COLLECTOR-EMITTER VOLTAGE www.fairchildsemi.com 3 FJP3305 -- High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) Figure 7. Saturation Voltage (O-Grade) Figure 8. Switching Time 10 10 tF & tSTG [ms], SWITCHING TIME VCE(sat) [V], SATURATION VOLTAGE IC = 4 IB O O 1 Ta = - 25 C Ta = 25 C O Ta = 125 C O Ta = 75 C 0.1 0.01 0.01 0.1 1 tSTG 1 tF 0.1 IB1 = - IB2 = 0.4A VCC = 125V 0.01 0.1 10 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 9. Reverse Biased Safe Operating Area Figure 10. Forward Biased Safe Operating Area 100 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 10 IB1=2A, RB2=0 1 0.1 O TC = 25 C Single Pulse 0.01 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE 500m s 5ms IC (DC) VCC=50V, L=1mH 1 10 1ms IC (Pulse) 10 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 11. Power Derating 100 PC[W], POWER DISSIPATION 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE (c) 2007 Fairchild Semiconductor Corporation FJP3305 Rev. 1.0.0 www.fairchildsemi.com 4 FJP3305 -- High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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