STD7N80K5, STP7N80K5, STU7N80K5 N-channel 800 V, 0.95 typ., 6 A Zener-protected SuperMESHTM 5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes 2 3 1 VDS RDS(on)max ID PTOT 800 V 1.2 6A 110 W STD7N80K5 DPAK STP7N80K5 TAB STU7N80K5 TAB * Worldwide best FOM (figure of merit) 3 2 3 1 1 2 IPAK TO-220 * Ultra low gate charge * 100% avalanche tested * Zener-protected Figure 1. Internal schematic diagram Applications * Switching applications D(2, TAB) Description G(1) S(3) AM01476v1 These N-channel Zener-protected Power MOSFETs are designed using ST's revolutionary avalanche-rugged very high voltage SuperMESHTM 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel STD7N80K5 STP7N80K5 7N80K5 TO-220 Tube STU7N80K5 October 2013 This is information on a product in full production. IPAK DocID023448 Rev 5 1/21 www.st.com Contents STD7N80K5, STP7N80K5, STU7N80K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 .............................................. 9 DocID023448 Rev 5 STD7N80K5, STP7N80K5, STU7N80K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate- source voltage Value Unit 30 V ID Drain current (continuous) at TC = 25 C 6 A ID Drain current (continuous) at TC = 100 C 3.8 A IDM (1) Drain current (pulsed) 24 A PTOT Total dissipation at TC = 25 C 110 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax) 2 A EAS Single pulse avalanche energy (starting TJ = 25 C, ID=IAS, VDD= 50 V) 88 mJ Peak diode recovery voltage slope 4.5 V/ns dv/dt (2) Tj Tstg Operating junction temperature C -55 to 150 Storage temperature C 1. Pulse width limited by safe operating area. 2. ISD 6 A, di/dt 100 A/s, VDS(peak) V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit DPAK Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb(1) Thermal resistance junction-pcb max TO-220 IPAK 1.14 62.5 50 C/W 100 C/W C/W 1. When mounted on 1 inch FR-4, 2 Oz copper board. DocID023448 Rev 5 3/21 21 Electrical characteristics 2 STD7N80K5, STP7N80K5, STU7N80K5 Electrical characteristics (TCASE = 25 C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage (VGS= 0) ID = 1 mA IDSS Zero gate voltage drain current (VGS = 0) VDS = 800 V VDS = 800 V, Tc=125 C 1 50 A A IGSS Gate body leakage current (VDS = 0) VGS = 20 V 10 A VGS(th) Gate threshold voltage VDS = VGS, ID = 100 A 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID= 3 A 0.95 1.2 Min. Typ. Max. Unit - 360 - pF - 30 - pF V(BR)DSS 800 3 V Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 1 - pF Co(tr)(1) Equivalent capacitance time related - 47 - pF Co(er)(2) Equivalent capacitance energy related - 20 - pF RG Intrinsic gate resistance f = 1 MHz, ID=0 - 6 - Qg Total gate charge - 13.4 - nC Qgs Gate-source charge - 3.7 - nC Qgd Gate-drain charge VDD = 640 V, ID = 6 A VGS =10 V (see Figure 17) - 7.5 - nC VDS =100 V, f=1 MHz, VGS=0 VGS = 0, VDS = 0 to 640 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/21 DocID023448 Rev 5 STD7N80K5, STP7N80K5, STU7N80K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time tf Typ. Max. Unit - 11.3 - ns VDD = 400 V, ID = 3 A, RG=4.7 , VGS=10 V (see Figure 19) Rise time td(off) Min. Turn-off delay time Fall time 8.3 ns 23.7 ns 20.2 ns Table 7. Source drain diode Symbol ISD ISDM VSD 1. (1) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 6 A Source-drain current (pulsed) - 24 A 1.5 V Forward on voltage ISD= 6 A, VGS=0 - trr Reverse recovery time - 315 ns Qrr Reverse recovery charge - 2.8 C IRRM Reverse recovery current ISD= 6 A, VDD= 60 V di/dt = 100 A/s, (see Figure 18) - 17.5 A - 480 ns - 3.8 C - 16 A Min Typ. Max Unit 30 - - V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD= 6 A,VDD= 60 V di/dt=100 A/s, Tj=150 C (see Figure 18) Pulsed: pulse duration = 300s, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS= 1mA, ID=0 The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device's ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID023448 Rev 5 5/21 21 Electrical characteristics 2.1 STD7N80K5, STP7N80K5, STU7N80K5 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK and IPAK Figure 3. Thermal impedance for DPAK and IPAK !-V )$ ! S / ,I PER M AT ITE IO D NI BY N M THIS AX A 2 REA IS $ 3 ON S MS MS 4J # 4C # 3INLGE PULSE 6$36 Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 !-V )$ ! IS IN TH AX 2 S IS EA AR S N O 3 $ MS N M TIO BY RA PE ITED / IM , MS 4J # 4C # 3INLGE PULSE 6$36 Figure 6. Output characteristics Figure 7. Transfer characteristics !-V )$ ! 6'36 6 6 6 6/21 6$36 !-V )$ ! 6 6$36 DocID023448 Rev 5 6'36 STD7N80K5, STP7N80K5, STU7N80K5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage !-V 6$3 6'3 6 6 6$3 Figure 9. Static drain-source on-resistance !-V 2$3ON /HM 6'36 1GN# Figure 10. Capacitance variations )$! Figure 11. Source-drain diode forward characteristics !-V # P& !-V 63$ 6 #ISS 4* # 4* # #OSS #RSS 6$36 Figure 12. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM )3$! !-V )$ ! 6'3 6 2$3ON NORM Figure 13. Normalized on-resistance vs temperature )$ ! 4* # 4* # DocID023448 Rev 5 4 * # 7/21 21 Electrical characteristics STD7N80K5, STP7N80K5, STU7N80K5 Figure 14. Normalized V(BR)DSS vs temperature !-V 6"2 $33 NORM )$M! Figure 15. Maximum avalanche energy vs starting TJ !-V %!3 M* 8/21 4* # DocID023448 Rev 5 4 * # STD7N80K5, STP7N80K5, STU7N80K5 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F IG=CONST VDD VGS 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 19. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID023448 Rev 5 10% AM01473v1 9/21 21 Package mechanical data 4 STD7N80K5, STP7N80K5, STU7N80K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 10/21 DocID023448 Rev 5 STD7N80K5, STP7N80K5, STU7N80K5 Package mechanical data Table 9. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.80 L2 0.80 L4 0.60 1.00 R V2 0.20 0 8 DocID023448 Rev 5 11/21 21 Package mechanical data STD7N80K5, STP7N80K5, STU7N80K5 Figure 22. DPAK (TO-252) type A drawing 0068772_M_type_A 12/21 DocID023448 Rev 5 STD7N80K5, STP7N80K5, STU7N80K5 Package mechanical data Figure 23. DPAK (TO-252) type A footprint (a) Footprint_REV_M_type_A a. All dimensions are in millimeters DocID023448 Rev 5 13/21 21 Package mechanical data STD7N80K5, STP7N80K5, STU7N80K5 Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/21 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 DocID023448 Rev 5 STD7N80K5, STP7N80K5, STU7N80K5 Package mechanical data Figure 24. TO-220 type A drawing ?TYPE!?2EV?4 DocID023448 Rev 5 15/21 21 Package mechanical data STD7N80K5, STP7N80K5, STU7N80K5 Table 11. IPAK (TO-251) mechanical data mm. DIM min. typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 16/21 max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10 DocID023448 Rev 5 1.00 STD7N80K5, STP7N80K5, STU7N80K5 Package mechanical data Figure 25. IPAK (TO-251) drawing 0068771_K DocID023448 Rev 5 17/21 21 Packaging mechanical data 5 STD7N80K5, STP7N80K5, STU7N80K5 Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 18/21 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID023448 Rev 5 18.4 22.4 STD7N80K5, STP7N80K5, STU7N80K5 Packaging mechanical data Figure 26. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 27. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID023448 Rev 5 19/21 21 Revision history 6 STD7N80K5, STP7N80K5, STU7N80K5 Revision history Table 13. Document revision history 20/21 Date Revision Changes 17-Jul-2012 1 First release. 17-Oct-2012 2 - Minor text changes in cover page - Modified: title and ID value in cover page 19-Dec-2012 3 - Minor text changes - Added: IPAK package - Updated: Section 4: Package mechanical data for IPAK 18-Mar-2013 4 - Modified: IAR value on Table 2 - Updated: Section 4: Package mechanical data only for DPAK package 09-Oct-2013 5 - The part number STF7N80K5 has been moved to a separate datasheet - Minor text changes DocID023448 Rev 5 STD7N80K5, STP7N80K5, STU7N80K5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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